Minimum Carrier Research Articles

Fabrication and Characterization of Nanostructured Tin doped Indium Oxide Coatings by the Instrument of Spray Pyrolysis

Nanostructured indium tin oxide (ITO) coating is one of the transparent conductive oxides (TCO) materials utilized as a transparent electrode. Due to its high demand in various applications like liquid crystal displays, touch screens, light emitting devices, and solar cells, ITO coatings have garnered significant research attention, owing to their excellent properties of high visible light transmittance and low resistance. Nanostructured coating of tin -doped Indium Oxide (ITO) was fabricated on glass slides utilizing the instrument of chemical spray pyrolysis (CSP), with varying levels of Sn-doping at 0, 3, 6, and 9 wt%. The effect of tin content on the many physical characteristics of the resulting coatings has been examined. The analysis of x-ray diffraction (XRD) displayed the characteristic orientations. The coatings have a polycrystalline cubic lattice structure along (400) as the preferred growth direction. Morphological measurements indicate that the samples possess a highly uniform surface and the grain size for the ITO samples is 100 nm displaying a nanostructure for all samples. The optical transmittance was measured over 75% for coating with tin content equal to 0wt%, while the transmittance of the Sn-doped films can range from 78% to 84% at 700 nm and the values of the direct bandgap were measured as 3.6, 3.65, 3.675, and 3.7eV for Sn doping 0, 3, 6, and 9 wt% respectively. In the visible area, the nanostructured ITO coatings exhibit elevated values of transmittance which makes them suitable for various optoelectronic applications such as window materials in solar cells. The results indicate a desirable reduction in the electrical resistivity with rising the number of carriers per unit volume and mobility with increasing tin content in the samples. The minimum electrical resistivity and maximum carrier concentration were achieved for ITO coating with tin content equal to 9wt%. The incorporation of Sn dopant significantly changes the overall electrical properties of indium oxide films, this is favorable for transparent conducting oxide.

Phenanthraquinone modified carbon quantum dots covalent-grafted onto Cu-MOF for photocatalytic CO2 reduction: Construction of dual-active sites and parallel charge channels based on the cooperation between photoexcitation and electron-entrap

How to coordinate the catalytic sites and the charge supply in CDs@MOFs hybrids to accelerate carriers transferring, suppress charge recombination and maximize charge transferring is a challenge. Here, the hybrid of PQ-CDs6.67@Cu-TCA fabricated by Cu-TCA (TCA = 4,4',4′'-nitrilotribenzoic acid) encapsulating 9,10-phenanthraquinone (9,10-PQ) modified carbon quantum dots (PQ-CDs), which was fully characterized and used for photocatalytic CO2 reduction. Covalent-bonding of CDs with the paddle-wheel Cu structure and 9,10-PQ provides parallel electron pathways for accelerating electron transferring and minimum carrier recombination. PQ-CDs6.67@Cu-TCA exhibited an excellent electron consumption rate (Rele) of 393.98 μmol·g−1·h−1 and a high CH4 yield of 44.43 μmol·g−1·h−1 with a selectivity of 90.22%, being far superior to most carbon materials/MOFs-based heterojunctions. Research evidences that through the parallel electron pathways, photon collection and transferring of PQ-CDs with optimal loading-amount meet chemical-producing Cu2+ and 9,10-PQ active centers, maximally improving electron utilization and suppressing the internal friction in PQ-CDs6.67@Cu-TCA.

Reduction of carrier density and enhancement of the bulk Rashba spin-orbit coupling strength in Bi2Te3/GeTe superlattices

Featured with the large Rashba constant (αR ∼ 4.2 eVÅ) coupled with the ferroelectricity, GeTe has attracted much interest, proposing novel energy-efficient spintronic devices. However, those approaches are hampered by the high hole density of GeTe around 1020-1021 cm−3, which deteriorates both the ferroelectricity and the bulk Rashba effect of GeTe. To solve this problem, we have investigated the superlattices composed of Bi2Te3 and GeTe ([BT|GT] SL), the former of which is known as a topological insulator (TI) with typically n-type conduction and strong spin-orbit coupling. We have investigated the magnetotransport properties of 25 [BTx|GTy]z SLs with varying thicknesses (x, y: the thickness in the multiples of the unit cell of the respective layer) of each layer and the repetition number (z) systematically. We have observed a minimum carrier density of 5.7 × 1019 cm−3 in [BT6|GeTe6]6 superlattice sample smaller than that (∼4.4 ×1020 cm−3) of GeTe single film by an order. In addition, we have found that some [BT|GT] SLs with reduced carrier density have a larger Rashba constant compared to that of a single GeTe film. This is explained by the change of the spin polarization which can be modulated by the Fermi level in the Rashba band. These results provide a viable way to realize robust ferroelectricity and strong SOC in GeTe-related material systems simultaneously.

Magnetic Saturation Suppression of Common-Mode Choke Coil by Selecting Suitable Inverter Carrier Frequency

Common-mode choke (CMC) plays an important role in suppressing the leakage current produced during the operation of pulse width modulation (PWM) inverters. However, when the common-mode path exhibits a large series stray capacitance, particularly the capacitance produced by long shielded cables, the CMC core reaches magnetic saturation. This paper presents a technique of selecting a suitable carrier frequency for the inverter to suppress the magnetic saturation of the CMC. First, the analytical approach leads to a non-saturation condition, and clarifies the maximum and minimum carrier frequency design conditions. Subsequently, the effect of the design is demonstrated by a non-linear circuit simulation and experimental tests using an actual inverter system demonstrate the effectiveness of the design technique.

Significance of Thermophoretic Particle Deposition, Arrhenius Activation Energy and Chemical Reaction on the Dynamics of Wall Jet Nanofluid Flow Subject to Lorentz Forces

The need for effective heating and cooling systems in the automotive, chemical, and aerospace industries is driving a rapid proliferation of heat-transfer technology. In recent times, GO (Graphene Oxide) has been emerging as one of the most promising nanoparticles because of its uninterrupted behavior of electrical conductivity even at a minimum carrier concentration. Due to this incentive, the behavior of jet flow with heat and mass transfer features of electrically conducting based kerosene oil (KO) fluid dispensed by graphene nanoparticles was studied. In addition, the activation energy, irregular heat source/sink, thermophoretic particle deposition, and chemical reaction are also provoked. In order to provide numerical results, the boundary value problem of fourth-order (bvp4c) solver was used. The graphs were used to illustrate the effects of relevant parameters on the fluid flow, heat, and mass transfer rates. The incorporation of graphene nanoparticles significantly improves heat conductivity. Additionally, the nanoparticle volume fraction augments the temperature and concentration profile while the velocity profile declines. Moreover, the temperature enhances due to the heat source, whilst the contrary behavior is observed in the presence of the heat sink. Furthermore, the shear stress increases up to 12.3%, the Nusselt number increases up to 0.119%, and the Sherwood number increases up to 0.006% due to the presence of nanofluid. Finally, we can conclude that the latest work will be useful for thermal cooling systems, including cooling for engines and generators, nuclear systems, aviation refrigeration systems, and other systems.

Quaternary – alloyed capping for strain and band engineering in InAs sub – monolayer quantum dots

In the last few years, a considerable amount of attention has been given to the optimization of several capping layers (CLs) in InAs/GaAs sub – monolayer (SML) quantum dots (QDs) heterostructure for a sustainable room – temperature (RT) operation in 1.3–1.55 μm telecommunication range (O, C – bands). In particular, the quaternary – alloyed capping (Q – CL: Q – Sb: InxGa1−xAsySb1−y, Q – N: InxGa1−xAsyN1−y, and Q – SbN: GaAsxSbyN1−x−y) has been explored in this work to reach the above – stated photoluminescence (PL) emission wavelength and we compared it with the conventional InAs/InxGa1−xAs QDs using Nextnano software. This tool is based on 8 – band k.p model that solves the self – consistent Schrödinger – Poisson equations analytically to obtain the envelope functions of the eigen energy levels (both electrons and holes) and finally the absorption spectra. Although Q – CL help in preserving QD morphology by strain reduction, it also allowed us create deep carrier confinement potential near conduction and valence band offsets i.e. CBO (VBO) where there is a minimum carrier escape probability towards GaAs barriers (more thermal stability) thus fostering a prolonged PL emission wavelength at 300 K. By changing atomic constituent's composition in Q – CLs, the obtained ground – state (GS) band – to – band absorption energy are 1.31 (Q – Sb22%, 1.25 (Q – N1.8%), 1.37 μm (Q – SbN2.2%))). Such deep confinement aid in the dark current reduction and can promote for high temperature operation by improving the PL quantum yield by several orders of magnitude. The inherent material properties of CL composing the surfactant effect of Sb, larger bond strength of tensile – strained dil.N, and phase separation effects of Sb–N alloys are advantageous in this regard to corroborate further PL redshift.

Optoelectrical impact of alternative window layer composition in CdTe thin film solar cells performance

This study investigates the integrability of different alternatives of cadmium sulfide (CdS), namely, oxygenated cadmium sulfide (CdS:O) and cadmium zinc sulfide (CdZnS) as the potential window layers in CdTe thin film solar cells using SCAPS-1D and experimental fabrication. The performance parameters such as open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), conversion efficiency (η), and quantum efficiency (QE) have been examined for cells with different carrier concentration and series resistance (Rs) of window layer materials. Calculation results shows that the incorporation of oxygen (CdS:O) with series resistance (Rs ≤ 1E−1 Ω.cm2) and minimum carrier concentration of 1016 cm−3 contributes in optimum band alignment that enhances photo-current collection from both short and long wavelength regions compared to baseline CdS/CdTe solar cell. Moreover, the performance of the proposed cells has been improved in terms of QE, Jsc, Voc, η, and FF upon insertion of novel CdZnS layer. However, carrier recombination increases the saturation current density for CdZnS resulting in unstable performance. Consequently, upon insertion of CdS:O window layer, conversion efficiency enhancement is observed with Jsc (29.10 mA.cm−2), Voc (0.889 V) and FF (70.39%). The proposed window materials are deposited using RF-sputtering method and the experimental results are incorporated in simulation to validate the findings.

Assessing Prevalence and Carrier Frequency of Succinic Semialdehyde Dehydrogenase Deficiency.

Pathogenic variants in ALDH5A1 cause succinic semialdehyde dehydrogenase (SSADH) deficiency, with >180 cases reported worldwide. However, a nonspecific neurologic presentation and inconsistent variant nomenclature have limited diagnoses. In this study, pathogenic variants in ALDH5A1 were curated and variant prevalence assessed in the Genome Aggregation Database (gnomAD) to determine a minimum carrier frequency and to estimate disease prevalence. Stringent population variant analysis, including 98 reported disease-associated ALDH5A1 variants, indicates a pan-ethnic carrier frequency of ∼1/340, supporting a prevalence of SSADH deficiency of ∼1/460 000 worldwide, with highest carrier frequencies observed in East Asian and South Asian populations. Because heterozygous loss of function alleles are rare in gnomAD and >60% of reported disease-causing variants were missense changes that were not present in gnomAD, the pan-ethnic carrier frequency for SSADH deficiency is likely not fully represented in this study. Additional analyses to investigate the potential impact of more common ALDH5A1 variants with reduced but not deficient enzyme activity, including analysis in diverse populations, are needed to fully assess the prevalence of this ultra-rare disease.

P‐12: Activation of IGZO Devices at 150°C via Reduction Process Using Hydrogen Gas During Sputtering

In this study, we propose an activation method of IGZO films at 150 °C for future flexible electronics. By adding hydrogen gas during IGZO sputtering, near‐conduction band minimum defect states and carrier concentration in the IGZO film could effectively be decreased by annealing at 150 °C. We successfully demonstrated high‐performance IGZO thin‐film transistors (TFTs), Schottky diodes, and metal‐semiconductor field‐effect transistors (MES‐FETs) at a maximum processing temperature of 150 °C.

RETRACTED ARTICLE: Analyzing gene polymorphism and metal folic acid interactions in neural tube defects using optimized deep recurrent neural networks

Recently, increasing importance has been given to neural tube defects (NTDs), considered a congenital disability that affects the brain and the spinal cord. NTD occurs because of genetic information passed from parents to children via genes that affect the brain region’s shape or function. Presently, minimum folate carrier (MFC A80G) gene polymorphism and maternal folic acid interactions are associated with NTD. Therefore, we designed and developed a grey wolf optimizer-assisted deep recurrent neural network to predict the association between gene polymorphism and folic acid interaction in NTD. The information of different control families and nuclear family information was collected to examine the process of polymorphism. Moreover, the homozygous mutant type (GG) genotype mothers and folic acid consumption levels were continuously analyzed to identify the link with and risk of NTD. The simulation analysis was performed to evaluate the statistical results in comparison with those obtained using conventional methods. Given the importance of interactions and associations, this research discusses the optimized deep recurrent neural network-based polymorphism process to identify the NTD risk factors with a lower error ratio of 0.015%. We found that MFC-GG genotype polymorphism and folic acid consumptions are essential and effective in lowering the prevalence of NTD among offspring with maximum accuracy rate of 99.5%.

Genetic and Epidemiological Study of Adult Ataxia and Spastic Paraplegia in Eastern Quebec.

To estimate the minimum prevalence of adult hereditary ataxias (HA) and spastic paraplegias (HSP) in Eastern Quebec and to evaluate the proportion of associated mutations in identified genes. We conducted a descriptive cross-sectional study of patients who met clinical criteria for the diagnosis of HA (n = 241) and HSP (n = 115) in the East of the Quebec province between January 2007 and July 2019. The primary outcome was the prevalence per 100,000 persons with a 95% confidence interval (CI). The secondary outcome was the frequency of mutations identified by targeted next-generation sequencing (NGS) approach. Minimum carrier frequency for identified variants was calculated based on allele frequency values and the Hardy-Weinberg (HW) equation. The minimum prevalence of HA in Eastern Quebec was estimated at 6.47/100 000 [95% CI; 6.44-6.51]; divided into 3.73/100 000 for autosomal recessive (AR) ataxias and 2.67/100 000 for autosomal dominant (AD) ataxias. The minimum prevalence of HSP was 4.17/100 000 [95% CI; 4.14-4.2]; with 2.05/100 000 for AD-HSP and 2.12/100 000 for AR-HSP. In total, 52.4% of patients had a confirmed genetic diagnosis. AR cerebellar ataxia type 1 (2.67/100 000) and AD spastic paraplegia SPG4 (1.18/100 000) were the most prevalent disorders identified. Mutations were identified in 23 genes and molecular alterations in 7 trinucleotides repeats expansion; the most common mutations were c.15705-12 A > G in SYNE1 and c.1529C > T (p.A510V) in SPG7. We described the minimum prevalence of genetically defined adult HA and HSP in Eastern Quebec. This study provides a framework for international comparisons and service planning.

Simplification of Shapley value for cooperative games via minimum carrier

Shapley value is one of the most fundamental concepts in cooperative games. This paper investigates the calculation of the Shapley value for cooperative games and establishes a new formula via carrier. Firstly, a necessary and sufficient condition is presented for the verification of carrier, based on which an algorithm is worked out to find the unique minimum carrier. Secondly, by virtue of the properties of minimum carrier, it is proved that the profit allocated to dummy players (players which do not belong to the minimum carrier) is zero, and the profit allocated to players in minimum carrier is only determined by the minimum carrier. Then, a new formula of the Shapley value is presented, which greatly reduces the computational complexity of the original formula, and shows that the Shapley value only depends on the minimum carrier. Finally, based on the semi-tensor product (STP) of matrices, the obtained new formula is converted into an equivalent algebraic form, which makes the new formula convenient for calculation via MATLAB.

Motorway age is linked to larger body size, but not song carrier frequency, in male grasshoppers from roadside populations

Producing calls with increased minimum carrier frequency is well documented in sound communicating species confronted with noise pollution, possibly helping them to avoid acoustic masking of low-frequency signals. However, the lack of studies on invertebrates limits our understanding of the potentially adverse effects of anthropogenic noise on natural populations. While males of the grasshopper Chorthippus biguttulus are known to produce courtship signals with elevated low-frequency local maxima (LFLM) in roadside populations, previous studies provided no insight into morphological traits underlying LFLM shifts. Although developmental plasticity was identified as one main factor accounting for elevated LFLM, an additional role for a more hard-wired trait architecture was proposed, possibly as a result of adaptation to traffic noise. Our current study therefore aims to assess (1) whether the position of LFLM is related to male body size, (2) whether body size is correlated with motorway age, and (3) whether the position of LFLM is correlated with motorway age in C. biguttulus males from roadside populations. In addition to substantial variation in LFLM among C. biguttulus males, we found that larger males produced signals with lower LFLM, suggesting a potential role in female choice as a predictor of male quality. While we found no significant correlation between LFLM and motorway age, C. biguttulus males were larger near older motorway sections. This positive correlation may be due to several reasons, including: (1) higher nutrient concentration and availability in plant tissues due to eutrophication of roadside habitats; (2) temporal succession of male size phenotypes during colonization processes; and/or (3) selection for larger body size in roadside populations. Our results highlight the multifaceted and often complex nature of the relationships between morphology, signal traits and anthropogenic pressures on sound communication in invertebrates.

Synthesis and Photocatalytic Activity of Ni–Fe Layered Double Hydroxide Modified Sulphur Doped Graphitic Carbon Nitride (SGCN/Ni–Fe LDH) Photocatalyst for 2,4-Dinitrophenol Degradation

In this work, visible light-active sulphur doped graphitic carbon nitride coupled with Ni–Fe layered double hydroxide (SGCN/Ni–Fe LDH) was prepared through co-precipitation procedure using commercially available thiourea, nickel nitrate, and ferric nitrate. The surface morphology characterization showed LDH crystallite growth onto the surface of SGCN, exploiting the delocalized π-electrons of graphitic structure to attain chemical stability. The synthesized photocatalyst exhibited 98% 2,4-dinitrophenol (DNP) photodegradation within 120 min of visible light irradiations, which was surprisingly high compared to 60 and 55% obtained for bare GCN and Ni–Fe LDH samples. This photo removal efficiency could be due to suitable bandgap energy, layered graphitic and brucite Ni–Fe layered structures, and sufficient pollutant adherence to active sites provided by incorporation of S dopant into bare GCN. The characterization results obtained by cyclic voltammetry graph photoluminescence and electrochemical impedance spectra indicated minimum charge carrier recombination due to the type-II charge transfer route along with an active generation of ⋅O2− and h+ as dominant reactive species participating in DNP mineralization into more unaffected inorganic ions. The photocatalytic activity enhanced in an acidic medium at optimized parameters, i.e., pH 4, photocatalyst dosage 50 mg in 50 mL solution, and DNP concentration 1.0 × 10−4 mol/dm3, due to ionic interactions between negatively charged DNP and positive intercalated structure of Ni–Fe LDH. The as-prepared photocatalyst photodegradation ability was retained after 5 catalytic cycles, confirming its environmentally-compatible usage in water treatment.

Effect of anionic fluorine incorporation on structural, optical and electrical properties of ZnO nanocrystalline films

ZnO and ZnO:F (fluorine doped Zinc oxide) films have been deposited on glass substrates at 325 ± 5 °C through ultrasonic spray pyrolysis method (USP). X-ray diffractometer (XRD) has been utilized to determine the crystal structural and some structural parameters such as lattice constants, texture coefficients TC (hkl), crystallite size and dislocation densities of all the ZnO films. The XRD results have revealed that all the ZnO films have the hexagonal wurtzite structure and F incorporation shows no significant effect on the crystal structure. X-ray photoelectron spectroscopy (XPS) measurements have confirmed the presence of fluorine atoms in the ZnO lattice and also the existence of Zn–F bonding states. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements have been carried out to investigate the effect of F doping on the surface morphology of the ZnO films. The optical properties of the films have been analyzed by utilizing transmittance, absorbance and reflectance measurements. Some optical parameters such as extinction coefficient (k), refractive index (n) and optical conductivity have been determined depending on the change in F incorporation. Increasing the F doping initially led to a decrease in the optical band gap, but later increased. Electrical resistivity and carrier concentration values of the deposited films have been determined with Hall effect measurement system and it has been detected that 6% F-doped ZnO film has the minimum resistivity and maximum carrier concentration.

Potential bioactive ingredient from elderberry fruit: Process optimization for a maximum phenolic recovery, physicochemical characterization, and bioaccesibility

BACKGROUND: Dark-skin berries constitute a polyphenol-rich source of interest for the development of functional ingredients. OBJECTIVE: To develop an elderberry powder, addressing technological aspects for maximum bioactive recovery, including physical quality and bioaccesibility of the antioxidant compounds. METHODS: An optimization of the combined process of enzyme-assisted extraction and freeze-drying was undertaken. Polyphenols and anthocyanins were quantified by spectrophotometric and HPLC-DAD analysis along processing stages and an in vitro digestion model was used to study the antioxidant compound activity through gastrointestinal tract and after transepithelial transport across a Caco-2 cell monolayer. Powder physical properties were also evaluated. RESULTS: The best extraction conditions were 45°C and 160 ppm enzyme. 10% maltodextrin was the minimum carrier concentration needed to get a freeze-dried powder with good physical properties and maximum bioactive content. The phenolic compounds identified in fruits (mainly cyanidin-based anthocyanins, quercetin-3-rutinoside, catechin and, in smaller amounts, gallic and chlorogenic acids) were also present in the optimum extract and the powder. High bioaccesibility of bioactive compounds and antioxidant activity were obtained after in vitro digestion and transepithelial transport. CONCLUSION: The designed elderberry powder showed great potential as functional ingredient to be used in berry juice-based beverages or other products formulated with fruit powders.

Gas Sensing of (SnO2)1-x(ZnO)x Composite Associating with Electrical Properties

Abstract
 Semiconductor-based gas sensors were prepared, that use n-type tin oxide (SnO2) and tin oxide: zinc oxide composite (SnO2)1-x(ZnO)x at different x ratios using pulse laser deposition at room temperature. The prepared thin films were examined to reach the optimum conditions for gas sensing applications, namely X-ray diffraction, Hall effect measurements, and direct current conductivity. It was found that the optimum crystallinity and maximum electron density, corresponding to the minimum charge carrier mobility, appeared at 10% ZnO ratio. This ratio appeared has the optimum NO2 gas sensitivity for 5% gas concentration at 300 °C working temperature.

Ultra-fast measurement circuit for transient space charge limited current in organic semiconductor thin films

The charge carrier mobility is a crucial parameter determining the device performance for numerous different semiconductor applications. Consequently, an accurate measurement of this quantity is crucial. For this purpose, the transient space charge limited current (SCLC) method is commonly applied and is preferable over, for example, Hall or field effect measurements, as the analyzed current direction is in line with typical device architectures. For the transient SCLC method, a voltage step is applied and the transit time of injected charge carriers is determined using displacement currents. Consequently, the difficulty of this method is the use of an adequate RC time constant for the sample charging, as it needs to be much shorter than the transit time. This parameter generally limits the application of transient SCLC strongly, in terms of obtainable charge carrier mobility or minimum required film thickness. Here, we demonstrate a measurement circuit with a low RC time constant, which works in a wide current range (1 A–0.5 A) and thus allows for significant flexibility in terms of minimum film thickness or detectable charge carrier mobility. The circuit is fast enough to measure, for example, charge carrier mobilities of up to for a 76 nm thick 4,4’,4”-Tris[phenyl(m-tolyl)amino]triphenylamine (MTDATA) layer, without using limited bridge circuitry. For this purpose, a capacitor coupled fast transistor switch generates a voltage step to avoid voltage oscillations and a fast operational amplifier is used for amplification of the voltage over a variable measurement resistor. We demonstrate the circuit working principle by measuring benchmarked MTDATA diodes and discuss its range of application.

Doping effects on physical properties of (1 0 1) oriented tin zinc oxide thin films prepared by nebulizer spray pyrolysis method

Transparent conducting tin doped zinc oxide thin films were prepared by nebulizer spray pyrolysis technique for different doping concentrations. The structural properties was investigated using X-ray diffraction analysis which ensured that the polycrystalline nature of the zinc oxide with hexagonal wurtzite structure. The surface properties were analyzed by scanning electron microscope and atomic force microscope. The Energy Dispersive X-ray spectroscopy ensures that the presence of Zn, O and Sn elements in the deposited films. Optical transmissions of the films exhibit for undoped film is 75%, which is improved up to 93% for tin doped films and the optical absorption is below 1.7%. The band gap energy of the films is achieved in the range of 3.54–3.67 eV. From the Hall Effect measurements we observed a minimum resistivity (9.2 × 10−4 Ω-cm) and maximum carrier concentration (7.4 × 1021 cm−3).

GaN-based LSK demodulators for wireless data receivers in high-temperature applications

GaN (gallium nitride)-based fully-integrated demodulators are presented. These modules, intended for wireless applications, target high-temperature (HT) environments including monitoring devices in aerospace. The presented demodulators are dedicated to recover Load-shift keying signals modulating a low carrier frequency to maximize power transfer efficiency and increase data transmission rate through metallic barriers. Logic gates are implemented and successfully tested at HT exceeding 400 °C. Proposed demodulators are built from half and full bridge rectifiers, comparators, voltage references and inverters, and operate at a minimum carrier frequency (fc) of 50 kHz. A demodulator based on a digital topology is proposed to cover MHz range fc. A complementary ±14 V supply voltage is required to operate the circuits. Reported post-layout simulation results validate the functionality and performance offered by the proposed demodulators over the 25 °C–400 °C temperature range. Also, a complete chip layout has been done, where the introduced demodulators occupy 10 mm2 of a GaN die area.