P‐12: Activation of IGZO Devices at 150°C via Reduction Process Using Hydrogen Gas During Sputtering

Abstract

In this study, we propose an activation method of IGZO films at 150 °C for future flexible electronics. By adding hydrogen gas during IGZO sputtering, near‐conduction band minimum defect states and carrier concentration in the IGZO film could effectively be decreased by annealing at 150 °C. We successfully demonstrated high‐performance IGZO thin‐film transistors (TFTs), Schottky diodes, and metal‐semiconductor field‐effect transistors (MES‐FETs) at a maximum processing temperature of 150 °C.