An analytical approach to the optimisation of substrate carrier lifetimes in optoelectronic microwave grating structures is reported. The method is based on the single-section approximation of the diffusion-controlled multisection grating profile, and utilises the specific slope behaviour to maximise the differential microwave reflection coefficient per unit length. The resultant optimum carrier lifetime is presented as a function of optical excitation wavelength, surface recombination velocity and grating centre frequency. In silicon, optimum values of roughly 10-6-10-5 s have been obtained.
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