Abstract
A technique to map out all of the I-V characteristics of negative differential conductance (NDC) devices is described. This method uses the DC measurable positive conductance portions of the I-V curve together with the measured microwave reflection coefficients at different RF signal levels and fixed DC bias voltage. The advantages of the method for high NDC devices are pointed out in a stability analysis. The complete I-V curve of a tunnel diode has been obtained with an accuracy within 5% in a proof-of-principal test of this method. >
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