MMIC Research Articles

A C-Band Broadband Asymmetric Doherty Power Amplifier Using Phase Compensation and Low Q Technology

In this paper, we present a monolithic microwave-integrated circuit (MMIC) asymmetric Doherty power amplifier (ADPA) using 0.25[Formula: see text][Formula: see text]m gallium-nitride (GaN) process with a compact chip size of 2.9 mm × 1.9 mm in wireless transmitters. Two different power amplifiers are adopted to solve the contradiction between the output power and efficiency of the conventional Doherty power amplifier (CDPA). In addition, phase compensation and low Q impedance inverting network (IIN) technology are used in the input and output matching networks, respectively, to expand the bandwidth of the entire ADPA. The post-layout simulation results show that the designed ADPA has a saturation output power 42.5 dBm with 800 MHz bandwidth from 6.6 to 7.4 GHz. The ADPA demonstrates 36.8–41.8% power-added efficiency (PAE), whereas 44–54% drain efficiency (DE) is achieved at saturation power.

An Innovative Lens Type FinLine to Microstrip Transition

Due to the disadvantages of vacuum tubes in terms of warm-up time, size, and high-voltage needs, solid-state power amplifiers (SSPAs) with gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) are the key solution for power levels up to some kilowatts in continuous wave. An SSPA is the most convenient solution for these RF power levels due to its low weight, small size, negligible warm-up time, low-voltage operation, and high reliability. Spatial power amplifiers (SPAs) combining techniques are the best candidates for SSPAs due to the intrinsic low attenuation in dividing and combining functions. SPAs mainly use two types of probes: transverse and longitudinal, such as FinLines. This paper describes a broadband FinLine to microstrip (FLuS) transition based on dielectric lens theory. Comparative simulations with traditional FinLine transitions show a significant improvement in matching performances and a very significant increase in mechanical resistance of the transition. The proposed innovative FLuS uses a substrate shaping designed according to dielectric lens theory. Frequency simulations of a FLuS inside the WR22 waveguide are shown. These evidence the better performances of this transition than the classic FLuS transition using quarter-wave transformer (QWT) matching. A Q band spatial power combiner with dielectric lens FLuS was made and measured, showing the excellent performances of this innovative FLuS transition.

Fan-Out Antenna-in-Package Integration Using Heatsink Antenna

Antenna-in-package (AiP) has been widely applied for millimeter wave system integration. Fan-out interconnection provides low parasitic parameters and is the most suitable technology for monolithic microwave integrated circuit (MMIC) packaging. Thermal design should be considered due to high power consumption of mm-wave chips. For compact AiP system, arrangement of heat sink should not influence radiation performance. In this work, an AiP topology is proposed using 3-D fan-out integration, miniature horn antenna is adopted as heat sink with relative high gain and wide band. A small sized organic substrate board is embedded in molding compound for right-angle transition of millimeter wave signal. Choke structure is designed at the bottom surface of metal horn with improved transition performance. Two horn antennas are designed with measured gain 11.5 and 15.4 dB, respectively, bandwidth under return loss −10 dB is higher than 16.7% for 60 GHz wireless communication. The AiP system has been manufactured and measured on test board with well-functioned radiation performance. Thermal dissipation model is analyzed, measured results under 340 mW power consumption are consistent with simulation.

Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA.

In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are tested at different temperatures. The typical temperatures of −39.2 °C, −32.9 °C, −25.3 °C, −11.3 °C, −4.9 °C, 0 °C and 23 °C are chosen as the alpine condition. The major performance indexes including the direct current (DC) characteristics, S-parameters, stability, radio frequency (RF) output characteristics, output third-order intersection point (OIP3) and noise figure (NF), which were inspected and analyzed in detail. The results show that the DC characteristics, small-signal gain (S21), RF output characteristics and NF all deteriorate with the rising temperature due to the decrease in two-dimensional electron gas mobility (). Contrary to this trend, the special design makes stability and OIP3 increase. For further application of this MMIC LNA under alpine conditions, several measures can be utilized to remedy performance degradation. This paper can provide some significant engineering value for the reliable design of MMICs.

High-Tc Superconducting Microwave and Millimeter Devices and Circuits—An Overview

High temperature (high-Tc) superconductors (HTS) have found many applications in the last two decades. To microwave researchers and engineers, the ultra-low surface resistance of the thin-film HTS materials at microwave and millimeter frequencies and the highly non-linear Josephson junctions are of particular interest. The former can be exploited in the design and fabrication of passive microwave components and circuits with superior performance, and the latter can be exploited to create many novel active HTS devices. This paper provides an overview of the state-of-art development of HTS devices and circuits for microwave and mm-wave communication front-end receiver systems. The paper is particularly focused on the latest advancement of HTS Josephson junction based active devices, monolithic microwave integrated circuits (MMIC), and whole receiver systems integrated with cryocoolers.

Design and Implementation of Phase Shifter for Wireless Communication

Abstract: Phase shifters are common microwave devices that are widely used to control the phase of a microwave signal in mobile satellite systems, microwave instrumentation and measurement systems, modulators, noise cancellation systems, frequency converters, electronic beam scanning phase arrays, microwave imaging, and many other industrial applications is used for. Phase shifters are passive devices used to perform variable phase changes in the wave propagating through it. Phase shifters require compact size, low cost and low insertion loss in the desired bandwidth. The size of the phase shifters is a crucial parameter, especially in the design of portable microwave devices, due to the space constraints. The significantly higher insertion loss of phase shifters used in a transmitter causes a significant reduction in transmitting power levels, while it causes a severe drop in signal to noise ratio when the phase shifter is a part of the receiver.. Phase shifters are essential components in phased array antennas for wireless and Radio Detection And Ranging (RADAR) applications. Loaded line phase shifter, reflective line phase shifter and switched line phase shifters are the most commonly used. The electrical performance of a phase shifter is specified in terms of insertion loss, phase error, operating bandwidth and power handling capacity.. Emerging wireless systems have transceivers that require compact and cost effective phase shifters. Physical size and weight of phase shifters are the major issues in mobile and the wireless applications. Therefore, miniaturization of phase shifters has become an important objective of radio frequency (RF) designers to provide portability and affordability in wireless/mobile systems. The present research work mainly focuses on planar phase shifter design with linear phase shift. In this a Defected Ground Structures (DGS) is proposed where as ,Monolithic Microwave Integrated Circuits (MMIC), Micro Electro Mechanical Systems (MEMS) and fractals have emerged as the possible techniques for miniaturization of RF systems and antennas. However the existence of defected cells on the ground plane may limit the use of DGS based phase shifters. MMIC technology increases the cost and complexity of manufacturing whereas MEMS based phase shifter is prone to limited life and yield. In this thesis, fractal techniques are adapted to design and develop miniaturized phase shifters for wireless applications.

High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology

AbstractIn this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 ${\rm \mu}$m gate lengths are characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC is designed, which has a measured gain higher than 19.3 dB across the frequency band of 33–36 GHz. The driver amplifier exhibits 31.9 dB output power and 26.5% power-added efficiency (PAE) at 35 GHz using 20 V supply voltage with 30% duty cycle. Another two-stage MMIC is realized as a power amplifier with a total output gate periphery of 1.8 mm. The output power and PAE of the power amplifier are measured as 3.91 W and 26.3%, respectively, at 35 GHz using 20 V supply voltage with 30% duty cycle. The high efficiency MMICs presented in this paper exhibit the capabilities of NANOTAM's 0.2 $\rm\mu$m AlGaN/GaN on SiC technology.

DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure

A <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ka</i> -band low-noise amplifier for low-consumption robust receivers is presented in this letter. The monolithic microwave integrated circuit (MMIC) is designed on a 100 nm GaN-on-Si technology provided by OMMIC foundry and decibel gain, average noise figure (NF) of 1.5 dB, with input–output return losses better than 15 dB in the whole 27–31 GHz design band. Large signal measurements show a OP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1 dBcp</sub> of +16 dBm and survivability to RF input power verified up to +25 dBm without showing critical degradation. These performances have been achieved with only 150 mW dc power consumption in linear operating condition, 30% less than other <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ka</i> -band GaN LNAs published in the open literature.

Harmonic Suppression of a Three-Stage 25–31-GHz GaN MMIC Power Amplifier Using Elliptic Low-Pass Filtering Matching Network

In this letter, the modified elliptic low-pass filtering (LPF) matching network (MN) is proposed for harmonic suppression of a wideband gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) power amplifier (PA) at millimeter-wave (mm-wave). To investigate the effectiveness of the method at mm-wave, a three-stage 25–31-GHz GaN MMIC PA is designed using a commercial 150-nm GaN HEMT foundry process, with a mask area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4.5\times2.6$ </tex-math></inline-formula> mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Simulated results show that the second harmonic of the PA can be effectively suppressed by using the elliptic LPF MN. Experimental results show that the realized MMIC PA achieves a saturated power-added efficiency (PAE) higher than 26.1% from 25 to 31 GHz, with a peak PAE of 31.5% at 29 GHz. The saturated gain and output power are more than 20 and 34 dBm within the band, respectively.

Ultra low phase noise and high output power monolithic microwave integrated circuit oscillator for 5G applications

novel structure of low phase noise and high output power monolithic microwave integrated circuit (MMIC) oscillator is presented in order to use it in 5G applications. The oscillator is based on the ED02AH process which allows us to design a microwave oscillator keeping a minimum size which is impossible to have it using other technologies since microwave oscillators are sensitive components above 20 GHz. The oscillator is studied, designed, and optimized on a GaAs substrate from the OMMIC foundry using the advanced design system (ADS) simulator in order to obtain a miniaturized oscillator (1.1×1.3 mm&lt;sup&gt;2&lt;/sup&gt;) generating two signals of different frequencies f&lt;sub&gt;o1&lt;/sub&gt;=26 GHz and f&lt;sub&gt;o2&lt;/sub&gt;=30 GHz. The objective is to design an oscillator with high output power and low phase noise while respecting its specifications. The optimization of the proposed microwave oscillator shows satisfying results. Indeed, at 26 GHz and 30 GHz, the output powers are respectively 13.33 dBm and 14.89 dBm. The oscillator produces a sinusoidal signal of 1.5 V and 1.75 V amplitude respectively at 26 GHz and 30 GHz. The oscillator phase noise at f&lt;sub&gt;o1&lt;/sub&gt; and f&lt;sub&gt;o2&lt;/sub&gt; resonance frequencies using the liquid crystal (LC) resonator shows respectively -109 dBc/Hz and -110 dBc/Hz at 10 MHz offset.

Low-Loss Heterogeneous Integrations With High Output Power Radar Applications at W-Band

This study presents a design of a 94-GHz high-performance and highly compact frequency-modulated continuous-wave radar sensor. In this sensor, an <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula> -band CMOS-based all-digital phase-locked loop chip, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> -band SiGe-based transceiver monolithic microwave integrated circuit (MMIC), and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> -band GaN-based MMIC power amplifier (PA) are heterogeneously integrated (HI). Each part of the 130-nm bipolar complementary metal-oxide-semiconductor (BiCMOS) SiGe-based transceiver MMIC is designed to include a low-noise amplifier, PA, octupler, mixer, and lange coupler. The fabrication process of our in-house silicon-based MEMS photosensitive composite film is developed to provide very high-density integration and very low insertion loss of interconnections between chips. The HI front end of the radar sensor is measured on-wafer with a high output power of 22 dBm. Moreover, a low double-sideband noise figure (NF) of 10.2 dB is obtained. Bonding–substrate integrated waveguide (SIW)–WG transitions between the heterogeneously integrated front end and the antenna are specially designed and verified. A 2.3-dB degradation is observed, where 19.7 dBm is measured at the transmitter WG WR-10-flange. Thus, the sensor offers a 55-dB dynamic range at a 2-m position with an expectation of a long-distance target-detection range. The radar sensor has an 11.7-cm range resolution and is only <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$60\times 40\times $ </tex-math></inline-formula> 8 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> in size, with a weight of only 78 g.

High-Performance RF Power Amplifier Module Using Optimum Chip-Level Packaging Structure

This article presents a high-performance radio frequency (RF) power amplifier (PA) module for which an optimum chip-level packaging structure is proposed to reduce the operating temperature of the RF PA monolithic microwave integrated circuit (MMIC). Because the output power ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub> ) and the efficiency of an RF PA module are strongly affected by the thermal characteristics of the PA MMIC, various types of heat spreader materials and thermal interface materials have been examined to implement the PA chip-level packaging structure, and the optimum combination is proposed for a performance enhancement of the PA module in this article. In addition, the optimum form-factor of the heat spreader was suggested based on a thermal simulation. To verify the proposed PA chip-level packaging structure, a 10 W 6–18 GHz RF PA MMIC using a commercial 0.25- <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i> m gallium nitride high electron mobility transistor process was designed and implemented for radar applications. The operating temperature of the PA MMIC on the proposed chip-level packaging structure shows a dramatic reduction of 24.8 °C, and accordingly, the average <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub> and average power-added efficiency are enhanced by up to 9.2% and 2.8%, respectively, when compared with a PA module using the conventional chip-level packaging structure.

A 110 GHz Comb Generator in a 250 nm InP HBT Technology

We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit was designed in a 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) technology using differential pairs. We characterized the output signal with a 110 GHz sampling oscilloscope and de-embedded the band-limited frequency spectrum of the pulse in the circuit reference plane. We measured a pulse duration of 7.1 ps and a peak amplitude of −0.333 V. In the frequency domain, the comb generator provided −48.7 dBm of output power at 110 GHz when the circuit is fed with a 1 GHz input signal.

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature

In order to comprehensively grasp the performance changes for the monolithic microwave integrated circuit (MMIC), this paper proposes that the complete temperature reliability tests for a 2.4–4.4 GHz gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain power amplifier (PA) should be investigated. The performance for this MMIC PA at different temperatures has been presented effectively. The results show that the direct current (DC) characteristics, small-signal gain (S21), and radio frequency (RF) output characteristics for this MMIC PA decrease and the output third-order intersection point (OIP3) increases with the rising temperature. The main factor influencing the performance is analyzed in detail. For further applications of this MMIC PA, several measures can be utilized to remedy the performance degradation. This paper can provide significant engineer guidance for the reliability design of RF microwave circuits.

A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications.

The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical role in RF transmit/receive (T/R) modules of phased array radar systems, mobile communication systems and satellite systems. Over recent years, there has been an increasing requirement to develop wideband high-efficiency MMIC high power amplifiers (HPAs) to accommodate wideband operation and reduce power consumption. This paper presents a wideband high efficiency MMIC HPA for Sub-6-GHz applications using a 0.25-μm gate-length D-mode GaN/SiC high electron mobility transistor (HEMT) process. The amplifier consists of two stages with two HEMT cells for the driver stage and eight HEMT cells for the power stage. To obtain a flat gain while maintaining the wideband characteristic, a gain equalization technique is employed in the inter-stage matching circuit. Meanwhile, a low-loss output matching network is utilized to ensure high efficiency. The fabricated HPA occupies a compact chip area of 14.35 mm2 including testing pads. Over the frequency range of 2–6 GHz, measured results of this HPA show a saturated continuous wave (CW) output power of 44.4–45.2 dBm, a power added efficiency (PAE) of 35.8–51.3%, a small signal gain of 24–25.5 dB, and maximum input and output return losses of 14.5 and 10 dB, respectively.

Design and Analysis of a Hybrid-Type RF MEMS Phase Detector in X-Band.

In this paper, we have designed, analyzed, and characterized a hybrid-type MEMS device for X-band phase shift measurement. The signal related to a phase shift of the inputs is fractionally in-line coupled by a MEMS beam and delivered to a thermoelectric power sensor, where the phase is ultimately converted into DC voltage output. With the hybrid of the MEMS beam and the thermoelectric power sensor, both in-line detection process and phase-DC voltage conversion is reserved, which is a benefit for large power capacity, good linearity property, and high-level integration density. In order to get a deep insight into the physical mechanisms involved in the phase detection process, a comprehensive analysis model is presented. The beam is modeled as a precise RLC circuit component, where the capacitance is related to the input power. The fabrication is compatible with GaAs monolithic microwave integrated circuit (MMIC) technology. Experimental results show that return loss is smaller than −11.3 dB and isolation is better than −9.3 dB over X-band. Phase shift detection from 0 to 180 degrees is verified for a large power range of 200–1600 mW (23–32 dBm). The perfect linearity property of the phase-detection sensitivity is demonstrated in the same power range. Low intermodulation distortion is also confirmed through measurement. It is revealed from the comparison between this work and other published results in the literature that this presented hybrid-type structure shows superiorities in both power handling ability and phase-detection linearity. It can be adopted in medium power signal applications with a high level of integration.

Study of Dependence of Capacitance of Coupled Stripline on Stripwidth, Frequency and Spacing Between Two Striplines

In this present paper, we studied about the dependance of capacitance of coupled stripline on strip width, frequency and spacing between two striplines. Miniaturized microwave circuits fabricated by extension of integrated circuits (ICs) technology to microwave frequencies are known as Microwave Integrated Circuits (MICs). MICs promise a real revolution leading to both expansion of present markets of microwaves &amp; opening of many new applications including host of non-military uses in India &amp; abroad. With the advent of MICs planar Transmission Lines have been developed which have been proved to be very significant as regards the fabrication of various microwave-components such as: Directional Coupler, Filters, Isolator &amp; Impedance transformers etc. The planar Transmission Lines are: Stripline, Microstripline, Slot line, Coplanar Striplines &amp; their different variant forms such as inverted and suspended striplines &amp; microstriplines etc. Among these microstripline is the most suited due to its open structure, low losses in gigaharz range of frequency, reduced size, improved reliability and eventual cost reduction in mass production. The microstrip transmission line consists of a narrow strip conductor separated from a conducting ground plane by an intervening supporting dielectric substrate as studied by Wheeler and others. The electromagnetic traveling through such structures suffers from some losses like: Conductor loss &amp; Dielectric loss. There is a change of phase of the wave traveling through the structure also. This phase change (shift) depends on the width of metal strip, height of the dielectric substrate, permittivity of the substrate and operating frequency. The present study is devoted to this objective i.e. we have to study the variation of Phase-Shift of the wave within the structure with width of the stripline, height &amp; effective permittivity of the structure &amp; frequency.

유도성 소스 축퇴를 이용한 X-대역 GaN MMIC 저잡음 증폭기

In this study, an X-band GaN monolithic microwave integrated circuit (MMIC) low-noise amplifier is designed and fabricated for RF transceiver modules using a 0.2 μm ETRI GaN HEMT process. Through the application of a feedback microstrip line at the source of the transistor, the amplifier operation is stabilized, and a compromised impedance trace of the input impedance and noise matching is obtained, which minimizes the degradation of the maximum available gain and minimum noise figure. The developed MMIC low noise amplifier, which uses simple matching and biasing circuits as matching elements, exhibits a linear gain of more than 20 dB and a noise figure of 1.5～2.0 dB from 8.7 to 11.5 GHz. A single-tone power test shows an output P1dB of 17.1～24.3 dBm, and a two-tone IMD measurement shows an output IP3 of 27.4～32.4 dBm in the same frequency range.

IMS: The Greatest Show on Earth [President’s Column

This month&#x2019;s <i>IEEE Microwave Magazine</i> is devoted to all things related to the 2022 IEEE Microwave Theory and Technology Society (MTT-S) International Microwave Symposium (IMS). IMS 2022 is the world&#x2019;s foremost gathering for ultrahigh-frequency, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequency technology. It encompasses everything from basic technologies to components to systems, including the latest RF integrated circuits (ICs), microwave ICs, microelectromechanical systems, and filter technologies, as well as advances in CAD, modeling, electromagnetic simulation, and more. The conference includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events <xref ref-type="bibr" rid="ref2">[2]</xref>.

A High-Efficiency W-Band Power Combiner Based on the TM₀₁ Mode in a Circular Waveguide

A high-efficiency W-band 12-way power combiner system based on the TM <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">01</sub> mode in a circular waveguide has been presented in this study. It is a radial structure composed of three elements: a circular waveguide TM <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">01</sub> -mode transducer, an isolated 12-way radial power combiner, and amplifier modules. The measured passive combining efficiency is observed to be greater than 89.5% over the range of 85–100 GHz. The isolation between the inputs is better than 10 dB, with a maximum back-to-back return loss of 13 dB. By using 12 GaN monolithic microwave integrated circuit (MMIC) 2-W power amplifiers, the active combiner system produces a maximum power output of up to 22 W with an average combining efficiency of 81.7% within the band of 92–97 GHz. The power-added efficiency within the operating band has been measured to be up to 20.8%.