This paper presents our research on the TOP-Con silicon solar cells, which focuses on the passivated contacts based on a thin tunneling oxide layer and a silicon thin film. The influence of the microstructure of silicon thin film on the passivation property was studied. The experimental results indicated that the tunnel oxide combined with a-Si:H featured a good passivation property compared to the μc-Si:H. whereas, the annealed μc-Si:H led to a high fraction of crystallization, and no blistering was observed. A hybrid structure containing a-Si/μc-Si:H thin films was suggested to improve both the passivation and contact properties. The effective carrier lifetime of 3.2ms and implied Voc of 716mV were achieved with symmetric structure on n-type Cz substrate, indicating that our tunnel oxide/n+ hybrid-Si provides excellent passivation. The performance of TOP-Con solar cells with hybrid layer at the rear contact has been drastically improved compared to that of cells with μc-Si layer. Although a relatively low efficiency of 15.09% was achieved due to the poor passivation at the front surface, simulations indicated that the conversion efficiency of solar cells can be easily increased to 21.69% (Jsc=38.93mA/cm2, Voc=0.694V, FF=80.29%) by improving the front surface passivation and reducing the front surface reflectivity.