This presentation summarizes our sum knowledge to date on the topic of low temperature electrodeposition of crystalline Si. The motivation is to realize a low energy, low cost route towards inexpensive solar-grade Si. A brief commentary on the importance of this goal with respect to renewal energy prospects will first be provided. Subsequently, an introduction to the concept of hybrid electrodeposition-melt flux crystal growths will be given. A description of the general process of electrochemical liquid phase epitaxy (ec-LPE) will be presented. Then, an examination of factors specifically relevant to Si ec-LPE will be detailed. Our latest results in the realization of micron-thick Si films by this process will be described. Insights on the impact of the metallurgy of the liquid metal, the composition of the liquid electrolyte, and the design of the ec-LPE cell will be presented. Finally, a description of the short and long term requirements needed to advance ec-LPE beyond a lab curiousity will be discussed.