Abstract
The authors show that micrometer-thick garnet films exhibit a stripe domain structure between magnetic orientation transitions and switches to the in-plane and out-of-plane uniform states via two distinct physical mechanisms.
Highlights
Thin garnets films currently enjoy a resurgence of interest within the field of “insulator spintronics” that studies the interconversion of electronic and magnonic forms of spin currents [1,2,3,4,5,6,7]
Substantial efforts are devoted to the studies of garnet/heavy metal bilayers, where the magnetism of garnet insulators is interacting with the electron transport in conductors with strong spin orbit interactions [8,9,10,11,12,13,14]
We discuss the deficiencies of the previous theoretical explanation of two sequential reorientation transitions observed in experiments and suggest a better physical picture of the phenomenon
Summary
Thin garnets films currently enjoy a resurgence of interest within the field of “insulator spintronics” that studies the interconversion of electronic and magnonic forms of spin currents [1,2,3,4,5,6,7]. References [42,43] offered an explanation for this sequence of transitions based on the known temperature dependence of magnetization They assumed spatially uniform M at all temperatures and added a quartic term to the perpendicular anisotropy energy expression (1). Keff (T ) increases from a negative Keff (0) to a positive Keff (Tc ) = K > 0, i.e., evolves in the opposite direction as compared to the case of ultrathin films It is well known from the classic studies of orthoferrites [44,45] that a quartic term in the energy expression (3) produces the required sequence of two second-order transitions with T1 given by the condition Keff (T1) = 0 and T2 by Keff (T2 ) = K2. We have performed a new series of experiments to look into these issues and check whether experimental findings can be better explained by taking into account nonuniform magnetic states
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