Phase-change memory (PCM) using chalcogenide films composed of Ge–Sb–Te alloys is the only commercially available nonvolatile memory for storage class memory. Recently, superlattice films of GeTe and Sb2Te3, called interfacial PCM (iPCM), have attracted attention for further increasing the switching speed and reducing energy consumption. It has been reported that the iPCM device exhibits both unipolar- and bipolar-type resistive switching depending on the method of voltage application, and research is being conducted to advance its applications. However, all iPCMs reported thus far have been formed at high temperatures beyond the crystallization temperatures of GeTe and Sb2Te3 using vacuum chambers equipped with a heating stage, making mass production and practical application difficult. Here, we report on fabricated superlattice composed of S-doped GeTe and Sb2Te3 layers by combining room temperature deposition with subsequent two-step annealing. Upon evaluating the performance of this superlattice film as a bipolar-type iPCM, it was found to exhibit characteristics comparable to those of bipolar-type iPCM fabricated from high-temperature deposited superlattices. This technology is expected to contribute to an increase in the throughput of iPCM device manufacturing.
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