Abstract Due to its great application prospect in new energy vehicles, the silicon carbide Schottky barrier diodes (SBD) are the most popular wide bandgap power devices. Compared to the JBS SiC diode, the induced large P zone improves the surge current, but the rating of the surge current does not satisfy the need. Recently, many efforts have been proposed to improve the surge current for the MPS diode, such as introducing surge trigger structure from the layout perspective, optimizing the design of the cell, and reducing the defect density to form ohmic contacts. However, these efforts bring about the sacrifice of switching characteristics, adding additional process steps, and increasing manufacturing instability. Here, we propose a new cell design whose Ohmic and Schottky contact are simultaneously formed using a one-step ohmic process. The results show that the MPS surge current is three times higher than the fabricated JBS diodes. The resolution of challenges can improve the reliability of the use of SiC SBD and accelerate their application in various fields.
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