Abstract
Co-60 gamma irradiation of SiC merged-PiN Schottky (MPS) diodes up to fluences of 1 Mrad (Si) produces increases in both forward and reverse current, with less damage when the devices are biased during irradiation. Subsequent injection of minority carriers by forward biasing at 300 K can partially produce some damage recovery, but at high forward biases also can lead to further degradation of the devices, even in the absence of radiation damage. Recombination-enhanced annealing by carrier injection overall is not an effective technique for recovering gamma-induced damage in SiC MPS diodes, especially when compared to other near athermal methods like electron wind force annealing.
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