Electrothermal Coupling Model With Distributed Heat Sources for Junction Temperature Calculation During Surges

Abstract

High junction temperature is usually the main factor leading to device failures in high-power working conditions, such as surges or avalanches. It is of great significance to obtain the junction temperature quickly and accurately. Direct measurement of junction temperature is inconvenient, and usually indirect electrical measurement combined with model calculation is used. An electrothermal coupling junction temperature calculation model with distributed heat sources is proposed in this article. This model can accurately and quickly predict the device behavior during the surge process, as well as the voltage drop and temperature changes of each part of the device, without actually performing surge tests. This article describes the theoretical basis and calculation principles of the model. By taking a commercial SiC merged PiN Schottky diode as an example, this article also explains the details of the establishment of the electrical and thermal characteristic models of the device, as well as the calculation steps of the junction temperature by the thermal coupling model. The calculated device voltage drop curve of the device is in good agreement with the measured ones, and the calculated junction temperature curve is more consistent with the device failure mechanism than the one by the traditional RC thermal circuit model.