Switching Memory Characteristics Research Articles

Extraction, chemical, and dual-functional memory and threshold resistive switching characteristics of Elaeodendron buchananii extract

This work presents a study on the electrical properties of plant materials, which is a fascinating area of research. These materials show promising potential in mitigating the exponential increase in electronic waste by enabling the development of eco-friendly electronic devices that can biodegrade. This research article showcases findings on the extraction, chemical analysis, and dual-functional memory and threshold resistive switching of extracts from the Elaeodendron buchananii plant. We report threshold switching with impressive ON/OFF ratio of >103, a retention time of ≥103, and endurance of 20 cycles, for the sandwich type device consisting of Elaeodendron buchananii plant extract-based film positioned between silver and indium-doped tin oxide electrodes. After modifying the experimental parameters, specifically by reducing the voltage scan increments to 1mV and increasing the compliance current to 150μA, transition from threshold switching to bipolar memory mode was detected. This particular memory mode exhibited an ON/OFF ratio of 10 and demonstrated very low switching voltages of −0.37V and +0.22V, although for only a limited number of write/erase cycles. The switching mechanism for both the threshold and memory mode can be attributed to the formation of conductive filaments caused by the migration of oxygen vacancies.

A dual-functional two-terminal memristor based on Cs4PbBr6 perovskite for high density data storage and synaptic plasticity

Development of adaptive and multifunctional memristive systems is a major task for data storage and neuromorphic computing. Taking functionality into consideration, it is so important to achieve highly efficient memristive device. Here, we have fabricated a memristive device Al/Cs4PbBr6/ITO device. The Al and ITO were taken as top and bottom electrode respectively and the device conductance were mainly associated with Cs4PbBr6 perovskite layer. The device exhibited dual-functional threshold and memory switching characteristics, where both has individual features in terms of subduing sneak path current and high density storage ability respectively. Moreover, the proposed device emulated important synaptic functions such as excitatory post-synaptic current, pair-pulsed facilitation, pulse parameter dependent plasticity such as long-term potentiation/depression. Furthermore, the synaptic increment under optical exposer is an additional feature of the device for the development of photo-induced artificial neural network. Finally, the change in device resistance by the application of electric field could be related to the migration of halide ions and vacancies inside the perovskite matrix. Thus, the proposed device can serve as the potential candidate for the multi-purpose application.

Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications

Nonvolatile memories especially the ferroelectric (FE)-based ones such as ferroelectric tunnel junctions (FTJs) and ferroelectric field-effect transistors (FeFETs) have recently attracted a lot of attention. FTJs have been intensively researched for the last decade and found to be very promising memory devices due to their significant nondestructive readout advantage as compared to conventional ferroelectric random access memory (FRAM). However, more research is needed on FTJ devices to obtain reliable endurance and retention behavior. In this article, we demonstrate the characteristics and performance of zirconium-doped hafnium oxide-based FTJ devices in terms of FE switching and reliability. This is investigated for FTJ stack structure tuning as well as for the FE switching process in FTJ devices. The FTJ memory switching characteristics, the effects of polarization switching on the write conditions, and the impact of pulse width and pulse amplitude on switching are investigated. The impact of FE layer thickness and interface layer type/thickness are reported to obtain a maximum FTJ <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ratio (memory window) and reliable performance. The maximum <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ratio changes depending on the FE layer (zirconium-doped HfO₂ layer) thickness (12, 8, 6, and 4 nm), the interface layer type (SiO₂, Al₂O₃), and thickness (1 and 2 nm), indicating the maximum value of <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ratio for a 1 nm SiO₂ interface layer stack. Moreover, a stable endurance of 10⁴ cycles is reported and extrapolated measurements suggest stable retention for more than ten years. Time-dependent breakdown analysis was performed to investigate the reliability of devices indicating a lifetime of ten years.

Experimental and computational analysis of thermal environment in the operation of HfO2 memristors

Neuromorphic computation using nanoscale adaptive oxide devices or memristors is a very promising alternative to the conventional digital computing framework. Oxides of transition metals, such as hafnium (HfOx), have been proven to be excellent candidate materials for these devices, because they show non-volatile memory and analog switching characteristics. This work presents a comprehensive study of the transport phenomena in HfOx based memristors and involves the development of a fully coupled electrothermal and mass transport model that is validated with electrical and thermal metrology experiments. The fundamental transport mechanisms in HfOx devices were analyzed together with the local and temporal variation of voltage, current, and temperature. The effect of thermal conductivity of substrate materials on the filament temperature, voltage ramp rate, and set/reset characteristics was investigated. These analyses provide insight into the switching mechanisms of these oxides and allow for the prediction of the effect of device architecture on switching behavior.

High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition

The bipolar resistive switching (RS) characteristics of the ZnO-based TiN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZnO/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiN structure are investigated for flexible nonvolatile memory applications. Using a thin Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> buffer layer on both sides of the ZnO device shows uniform and eminently stable bipolar resistance switching characteristics. The device exhibits good RS with more than two orders of resistance ON-OFF ratio, retention of >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s at 120 °C, good dc endurance >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> cycles, and high ac endurance of >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> cycles with 40-ns pulsewidth without any degradation. The device shows high mechanical stability when under 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> continuous repetitive flexible bendings, indicating that high endurance with a very small bending radius of up to 3 mm. The lower Gibbs free energy of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (-1676 kJ/mol) film compared with the ZnO (-320.4 kJ/mol) and TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (-994 kJ/mol) films can improve the RS properties of the TiN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZnO/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiN device. The significant improvement in the TiN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZnO/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiN device is due to the reason that thin Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layers on both sides of ZnO would help stabilize the local oxygen migrations for the formation and rupture of the conductive filament during the continuous switching cycles, resulting in high memory switching characteristics.

The coexistence of threshold and memory switching characteristics of ALD HfO2 memristor synaptic arrays for energy-efficient neuromorphic computing

The development of bioinspired electronic devices that can mimic the biological synapses is an essential step towards the development of efficient neuromorphic systems to simulate the functions of the human brain. Among various materials that can be utilized to attain electronic synapses, the existing semiconductor industry-compatible conventional materials are more favorable due to their low cost, easy fabrication and reliable switching properties. In this work, atomic layer deposited HfO2-based memristor synaptic arrays are fabricated. The coexistence of threshold switching (TS) and memory switching (MS) behaviors is obtained by modulating the device current. The TS characteristics are exploited to emulate essential synaptic functions. The Ag diffusive dynamics of our electronic synapses, analogous to the Ca2+ dynamics in biological synapses, is utilized to emulate synaptic functions. Electronic synapses successfully emulate paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), spike-timing-dependent plasticity (STDP), short-term potentiation (STP), long-term potentiation (LTP) and transition from STP to LTP with rehearsals. The psychological memorization model of short-term memory (STM) to long-term memory (LTM) transition is mimicked by image memorization in crossbar array devices. Reliable and repeatable bipolar MS behaviors with a low operating voltage are obtained by a higher compliance current for energy-efficient nonvolatile memory applications.

Optically Switchable Memristors: A Route to Hierarchical Control in Artificial Intelligent Systems

Modulation of resistive switching memory by light opens the route to new optoelectronic devices that can be switched optically and read electronically. Applications include integrated circuits with memory elements switchable by light and optically reconfigurable and tunable synaptic circuits for neuromorphic computing applications and brain-inspired artificial intelligent systems. A novel polarization and wavelength-specific optoelectronic memory device is presented1 that can be controlled purely optically, electronically or by both. Optical or electronic modulation switches the device between low and high conducting states whilst modulation by both facilitates fine-tuning of the resistive memory properties and switching characteristics of the device. In biological synapses, the connection strength (plasticity) between two neurons is controlled by the ionic flow through the synaptic cleft and it is widely believed that the adaptation of synaptic weights enables biological systems to learn and function. Similarly, the conductance of a memristor depends on the history of the total charge that has travelled through it. A key feature of neuronal learning is habituation, whereby repeated stimuli strengthens the synaptic plasticity whilst a lack of stimuli results in weakening. Learning in biological systems also involves spike-timing-dependent plasticity (STDP). In STDP, learning the synaptic efficacy governing potentiation and depression is determined by the temporal order of pre-synaptic and post-synaptic spikes. Using our optical memristor device, we demonstrate optical control of synaptic potentiation and depression, optical switching between short and long-term memory and optical modulation of the synaptic efficacy via spike timing dependent plasticity. The work opens the route to dynamic patterning of memristor networks both spatially and temporally by light, thus allowing the development of new optically reconfigurable neural networks and adaptive electronic circuits.2 , 3 References Jaafar, A. H. et al. Reversible optical switching memristors with tunable STDP synaptic plasticity: a route to hierarchical control in artificial intelligent systems. Nanoscale 9, 17091 (2017).Kossifos, K. M., Antoniades, M. A., Georgiou, J., Jaafar, A. H. & Kemp, N. T. An Optically-Programmable Absorbing Metasurface. IEEE Int. Symp. Circuits Syst. (2018). doi:10.1109/ISCAS.2018.8351874Georgiou, J., Kossifos, K. M., Antoniades, M. A., Jaafar, A. H. & Kemp, N. T. Chua Mem-Components for Adaptive RF Metamaterials. IEEE Int. Symp. Circuits Syst. (2018). doi:10.1109/ISCAS.2018.8351852 Figure 1

Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

A device with an Al/copolymer/indium tin oxide structure is fabricated using a copolymer with a donor and acceptor structure. The memcapacitance characteristic corresponding to the single resistance state is found, and two-parameter storage is achieved. The device exhibits six capacitance states in three resistance states and excellent memory switching characteristics, including a low ON/OFF voltage, long retention time, and write-once–read-many-times and write–read–erase–read ability. The writing and reading of the capacitance and resistance states can be achieved by designing the appropriate voltage signal. These results provide a new approach for improving the storage density and information encryption.

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.

We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures. By adopting a nano-fabrication process using an anodic aluminum oxide (AAO) nanotemplate, a well-aligned Nb nanopin array bottom electrode was formed on the surface of a Si substrate. For comparison, a Nb thin film was employed as a different type of bottom electrode. Then, a NiO thin film dielectric was prepared on both the Nb bottom electrodes via a spin coating method, followed by Nb sputtering for the Nb top electrode. Both the RRAM devices with Nb nanopin and thin film bottom electrodes exhibited typical unipolar resistive switching behavior. However, a lower SET/RESET voltage was observed for the Nb nanopin electrode compared to the Nb thin film electrode by virtue of an enhanced electric field induced by the nanopin-shaped electrode. More significantly, on the basis of endurance and retention characteristics, the Nb nanopin electrode played a key role in minimizing the dispersion of the low- and high-resistance state currents and the variation in the SET/RESET voltage by developing more-concise conducting filaments in the conducting path. Therefore, we foresee that this approach can provide an insight into the optimal design of RRAM devices.

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.

As2Se3기반 Resistive Random Access Memory의 채널 직선화를 통한 신뢰성 향상

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous As2Se3-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous As2Se3 thin film for straight conductive channel. The optical parameters of amorphous As2Se3 thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser. Ag + ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

Improved Resistive Memory Switching Characteristics of Gold Nanoparticles Embedded Graphene Oxide

Resistive random access memory (ReRAM) has recently attracted great attention due to its potential for replacement of flash memory in next-generation nonvolatile memory applications. However, ReRAM devices are facing the problem of stability and repeatability which can be ascribed to the randomness of the conducting filaments formation. Nanoparticles are found to enhance electric field in their vicinity, which is anticipated to define the conductive filament precisely and favorable for the improved switching characteristics if embedded in devices. We have fabricated thin films of graphene oxide with embedded gold nanoparticles through spin coating on ITO/Glass substrates. Top electrodes of Aluminum were deposited using thermal evaporation through a shadow mask. Current-Voltage measurements were carried out using Keithley 2401 in top-bottom configuration at room temperature. The switching characteristics of the device with gold nanoparticles performed well in regard to stable and repeatable switching between low resistance and high resistance states along with low switching voltages with narrow window for switching voltages. These devices showed improved and stable resistance ratio over the period of 104 sec and hence it had good retention and endurance properties. These devices can be seen as potential candidates for memory applications in regard to repeatability and stability.

Observation of Nonvolatile Resistive Memory Switching Characteristics in Ag/Graphene-Oxide/Ag Devices

In this paper, we report highly stable and bipolar resistive switching effects of Ag/Graphene oxide thinfilm/Ag devices. The graphene-oxide (GO) thinfilms were prepared on Ag/SiO2/Si substrates by spin-coating technique. The Ag/GO/Ag devices showed a steady and bipolar resistive switching characteristic. The resistance switching from low resistance state (LRS) and high resistance state (HRS) with the resistance ratio of HRS to LRS of about 10 which was attained at a voltage bias of 0.1 V. Based on the filamentary conduction model, the dominant conduction mechanism of switching effect was well explained. Our results show GO can be a promising candidate for future development of nonvolatile memory devices.

DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

Vanadium-doped zinc telluride (ZnTe:V) thin film sandwiched by two different metal electrodes, that is, Al/ZnTe:V/Cu structure, was deposited onto the glass substrate by e-beam deposition technique in vacuum at a pressure of ~8 × 10−4 Pa. The deposition rate of the film was maintained at 2.052 nms−1. Circulation current was measured through this device as a function of potential difference applied across the structure. The Al/ZnTe:V/Cu structures exhibit memory switching characteristics at atmospheric pressure in room temperature. Switching characteristics of deposited Al/ZnTe:V/Cu structure as a memory device have been investigated in detail for various vanadium compositions, thicknesses of ZnTe:V films as well as various film temperatures, respectively. In all cases, it is seen that the metal/insulator/metal (Al/ZnTe:V/Cu) structures based on ZnTe:V can undergo an electroforming process and exhibit voltage-controlled negative resistance (VCNR) or a new switching process. It is also observed that the electric field, temperature, thickness, and dopant composition have important role in the switching characteristics. Switching characteristics have been interpreted by using a filamentary model. The switching effects of Al/ZnTe:V/Cu device may have important applications in the energy-oriented devices.

Different Interface Role in CuOx Based RRAM

For the embedded application of resistive switching memory using CuOx films, the differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors. Al/CuxO/Cu and TaN/CuxO/Cu devices were fabricated and investigated for the memory switching characteristics, data retention and mechanism, respectively. The results show better stability, preferable endurance, and larger resistance ratio for Al electrode. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. TaON was observed for TaN/CuxO/Cu device at the anode interface by X-ray photoelectron spectroscopy and transmission electron microscopy, which is believed to play a key role in the resistance transition. The physics behind this phenomenon of reactive top-electrode is revealed. The interface filament/charges trapping dominated model is proposed to clarify the electrical characteristics of the top-electrode/oxide reactions

Ferredoxin Molecular Thin Film with Intrinsic Switching Mechanism for Biomemory Application

A biomemory device consisting of cysteine modified ferredoxin molecules which possess a memory effect via a charge transfer mechanism was developed. For achieving an efficient bioelectronic device, cysteine modified ferredoxin was developed by embodying cysteine residues in ferredoxin by site--directed mutagenesis method to directly coordinate with the gold (Au) surface without use of any additional linkers. The thin film formation of ferredoxin molecules on Au electrode is confirmed by surface plasmon resonance (SPR) spectroscopy and scanning tunneling microscope (STM). Cyclic voltammetry (CV) and open circuit potential amperometry (OCPA) methods were used to verify the memory switching characteristics of the fabricated device. The charge transfer between ferredoxin protein molecules and Au electrode enables a bi-stable electrical conductivity allowing the system to be used as a digital memory device. Data storage is achieved by applying redox voltages which are within the range of -500 mV. These results suggest that the proposed device has a function of memory and can be used for the construction of a nano-scale bioelectronic device.

TiN electrode-induced bipolar resistive switching of TiO 2 thin films

The bipolar resistive switching characteristics in polycrystalline TiO 2 thin films after regular forming process were studied using two different top or bottom TiN electrodes (Sample A: top TiN/TiO 2/Pt, Sample B: Pt/TiO 2/TiN bottom). The sample A and B clearly showed two different switching directions of counter-clockwise (CCW) and clockwise (CW) bipolar switching behaviors, respectively, depending on the relative position of the TiN electrode. These switching characteristics in both samples could be understood by considering the forming and rupture of the conducting path due to the migration of oxygen ions between the TiO 2 layer and the TiN electrode, which acts like the oxygen reservoir. In addition, both samples clearly display high reliable memory switching characteristics, such as stable switching speed (μs), endurance behaviors (>10 4), and long retention times (>10 4 s).

Phase-Change Ge−Sb Nanowires: Synthesis, Memory Switching, and Phase-Instability

We report the synthesis and characterization of phase-change Ge-Sb nanowires with two different eutectic compositions and their memory switching characteristics. Under application of electric-fields with controlled pulse amplitude and duration times, Sb-rich (Sb > or = 86 at. %) eutectic Ge-Sb nanowires show phase-change based memory switching, while another eutectic GeSb (Ge:Sb = 1:1) nanowires do not show electronic memory switching at all. However, under repeated measurements, Sb-rich Ge-Sb nanowires display an increase of resistance of the low resistive state. The observed electrical irreversibility for Sb-rich Ge-Sb nanowires is attributed to the structural and compositional instability due to the phase-separation of Ge out of homogeneous Ge-Sb as observed from rapid thermal annealing and transmission electron microscopy experiments. Implications for design of Te-free nanoscale materials for phase change memory applications are also discussed.

Characterization of Silver Saturated-Ge45Te55Solid Electrolyte Films Incorporated by Nitrogen for Programmable Metallization Cell Memory Device

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of <TEX>$250\;^{\circ}C$</TEX> in electrolyte films without nitrogen doping increased by approximately <TEX>$300\;^{\circ}C$</TEX>, <TEX>$350\;^{\circ}C$</TEX>, and above <TEX>$400\;^{\circ}C$</TEX> in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with <TEX>$Ge_{45}Te_{55}$</TEX> solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high <TEX>$R_{off}/R_{on}$</TEX> ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

A guideline for designing chalcogenide-based glasses for threshold switching characteristics

Chalcogenide-based switching materials have potential applications in power control and information storage. In this work, an approach has been suggested to design chalcogenide-based amorphous materials for threshold or memory switching characteristics. Using this guideline, glasses have been formed in a new chalcogenide Al-Ge-As-Te system. All the samples studied have been found to exhibit threshold switching characteristics, which proves the validity of the suggested guideline.