Abstract
Development of adaptive and multifunctional memristive systems is a major task for data storage and neuromorphic computing. Taking functionality into consideration, it is so important to achieve highly efficient memristive device. Here, we have fabricated a memristive device Al/Cs4PbBr6/ITO device. The Al and ITO were taken as top and bottom electrode respectively and the device conductance were mainly associated with Cs4PbBr6 perovskite layer. The device exhibited dual-functional threshold and memory switching characteristics, where both has individual features in terms of subduing sneak path current and high density storage ability respectively. Moreover, the proposed device emulated important synaptic functions such as excitatory post-synaptic current, pair-pulsed facilitation, pulse parameter dependent plasticity such as long-term potentiation/depression. Furthermore, the synaptic increment under optical exposer is an additional feature of the device for the development of photo-induced artificial neural network. Finally, the change in device resistance by the application of electric field could be related to the migration of halide ions and vacancies inside the perovskite matrix. Thus, the proposed device can serve as the potential candidate for the multi-purpose application.
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