Abstract
For the embedded application of resistive switching memory using CuOx films, the differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors. Al/CuxO/Cu and TaN/CuxO/Cu devices were fabricated and investigated for the memory switching characteristics, data retention and mechanism, respectively. The results show better stability, preferable endurance, and larger resistance ratio for Al electrode. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. TaON was observed for TaN/CuxO/Cu device at the anode interface by X-ray photoelectron spectroscopy and transmission electron microscopy, which is believed to play a key role in the resistance transition. The physics behind this phenomenon of reactive top-electrode is revealed. The interface filament/charges trapping dominated model is proposed to clarify the electrical characteristics of the top-electrode/oxide reactions
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
