Dielectric Breakdown Mechanism Research Articles

Dielectric breakdown test of monolithic ceramic: Effects of electrode and sample thickness

To comprehend the mechanism of dielectric breakdown (DB) is fundamental for the work on improving the dielectric breakdown strength (DBS). Changing DB test in order to find the difference in DBS and DB channels is always one of the most important methods of studying mechanism of DB. In this paper, 6 different electrode set-ups were applied to the DB test of alumina ceramics with various sample thicknesses, and the effects of electrode and sample thickness were analyzed from the statistical characteristics of DBS data. Some phenomena were found: DBS first increased and then decreased with the increase of electrode size, and this could be attributed to the effect of electric field concentration and the area effect, and Weibull scaling law could be applied to analyze the area effect; the thickness-dependence of DBS was found in every electrode set-up, and none of the proposed mechanisms of DB could fully explain it; multi-layer series improved the high voltage resistance of alumina ceramic sheets, and the improvement factor was smaller than the predicted value on the base that the voltage-distribution ratio is equal in each layer.

Mechanism of Dielectric Breakdown in Heterogeneous Rock

Mechanism of Dielectric Breakdown in Heterogeneous Rock

Increased Deep Trap Density in Interfacial Engineered Nanocomposite Revealed by Sequential Kelvin Probe Force Microscopy for High Dielectric Energy Storage.

Nanocomposites combining inorganic nanoparticles with high dielectric constant and polymers with high breakdown strength are promising for the high energy density storage of electricity, and carrier traps can significantly affect the dielectric breakdown process. Nevertheless, there still lacks direct experimental evidence on how nanoparticles affect the trap characteristics of nanocomposites, especially in a spatially resolved manner. Here, a technique is developed to image the trap distribution based on sequential Kelvin probe force microscopy (KPFM) in combination with the isothermal surface potential decay (ISPD) technique, wherein both shallow and deep trap densities and the corresponding energy levels can be mapped with nanoscale resolution. The technique is first validated using the widely-used commercial biaxially oriented polypropylene, yielding consistent results with macroscopic ISPD. The technique is then applied to investigate polyvinylidene fluoride-based nanocomposites filled with barium titanate nanoparticles, revealing higher deep trap density around surface-modified nanoparticles, which correlates well with its increased breakdown strength. This technique thus provides a powerful spatially resolved tool for understanding the microscopic mechanism of dielectric breakdown of nanocomposites.

Surface aspects of novel Bio-HEAs MAO-treated in a Ca-, P-, and Mg-rich electrolyte

This study evaluated the effect of alloying elements, applied voltage, and bioactive species (Ca, P, and Mg) enrichment during the micro-arc oxidation (MAO) treatment of novel high entropy alloys (HEAs) targeted for biomedical applications. The non-equiatomic TiZrNbTaMo (TaMo), TiZrNbTaMn (TaMn), and TiZrNbFeMo (FeMo) samples were submitted to MAO treatment at distinct voltages (100, 200, and 300 V), then their chemical, phase, and morphological aspects were evaluated by x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Finally, the preliminary physicochemical behavior regarding contact angle and surface energy in distilled water at room temperature was evaluated. The results indicated that the alloying elements played a global role in the bulk’s phase composition, possessing distinct proportions of BCC and HCP phases. The MAO-treated surfaces depicted different mechanisms of anodic oxide growth and dielectric breakdown, forming the typical porous surface at distinct applied voltages. The bioactive species (Ca, P, and Mg) were gradually enriched in the oxide layer, composed of distinct nano-crystalline and amorphous layers that are typical of MAO-treated surfaces. As a result, roughness, contact angle and surface energy values of the MAO-treated samples were affected by the applied voltage and the bulk’s chemical composition, indicating potential for use in the biomedical field, especially as long-term implants and bone fixation devices.

Excellent energy storage performance of lead-based antiferroelectric ceramics via enhancing dielectric breakdown mechanism

Lead-based antiferroelectric (AFE) material with high power density has received extensive attention for potential applications in the energy storage devices. Nevertheless, the presence of a secondary phase reduces the band gap and concentrates a significant localized electric field at the center of the tips of both secondary phases, leads to a poor breakdown electric strength (Eb). Hence, we designed high Eb of (Pb1-1.5xSmx)(Zr0.995Ti0.005)O3 ceramics with high energy performance via enhancing dielectric breakdown mechanism by restraining secondary phase. Density functional theory calculations reveal that the valence and conduction bands of secondary phase are in close proximity to the Fermi level, indicating the smaller band gap of secondary phase is unable to withstand the concentration of local electric fields in this samples, thus leading to obtain a poor Eb. UV–vis absorption spectra experiments demonstrate that the overall band gap increases due to the A-site Sm modification strategy, effectively reducing the secondary phase and resulting in elevated levels of Eb. As a consequence, Eb is remarkably improved from 350 kV/cm into 540 kV/cm with increasing Sm3+ content. A record-high Eb of 520 kV/cm and high recoverable energy storage density of 12.9 J/cm3 (energy efficiency of 77.1 %) are achieved in (Pb0.91Sm0.06)(Zr0.995Ti0.005)O3 (PS6ZT) ceramics by tape-casting method. Concerning the performance of pulse charge–discharge, ultrahigh discharge energy density of 8.5 J/cm3 and excellent power density of 188.53 MW/cm3 are achieved in PS6ZT ceramics. Moreover, outstanding stability behavior with a broad frequency range of 1∼140 Hz and a broad temperature range of 20–120 ℃ are obtained. These results show that enhancing Eb mechanism will be provided a potential option to enhanced energy density for PbZrO3-based AFE ceramics.

Failure mechanism of dielectric breakdown in electrochemical hydrogen pumps

Electrochemical hydrogen pump (EHP) cells, employing ultra-thin (This article refers specifically to films with a thickness of 12μm) proton exchange membranes (PEMs), are used in different fields such as hydrogen purification, hydrogen compression, and the rapid activation of hydrogen fuel cells. However, under certain extreme conditions, the voltage of an EHP cell with an ultra-thin proton exchange membrane can rise rapidly and trigger dielectric breakdown of the PEM, resulting in a PEM perforation and cell failure due to an internal short circuit. In order to investigate the failure mechanism, this paper comprehensively analyzes the electrochemical failure process leading to the breakdown of EHP cells. This investigation is accomplished by monitoring characteristic parameters such as voltage and resistance. The research outcomes indicate that the failure process in EHP cells can be divided into three stages: (I) Normal operation stage, (II) Carbon corrosion stage, and (III) Dielectric breakdown stage. In stage-I, the main process is the EHP reaction itself, the cell is undamaged and the cell voltage is about −0.22 V. In stage-II, the localized water shortage at the anode leads to a rapid increase in the anode ohmic overpotential, and the cell voltage is around −1.9 V, which reaches the carbon corrosion threshold. As a result, the anode catalyst layer undergoes a severe carbon corrosion reaction, generating CO and CO2 gases, and the cell performance decreases but the PEM is not seriously damaged. As substantial amount of anode water is consumed, the cell enters into stage-III. At this stage, the anode overpotential further increases, and the cell voltage reaches above −14 V, resulting in dielectric breakdown of the PEM, internal short circuit of the cell, and the cell cannot work normally. This study can enhance the understanding of the electrochemical failure process in EHP cells, thereby providing a basis for improving their durability and reliability.

Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

In situ laser-based photoemission electron microscopy observations with time-dependent dielectric breakdown measurements of TiN/Hf0.5Zr0.5O2(HZO)/TiN ferroelectric capacitors were performed to reveal the dielectric breakdown (DB) mechanism. We succeeded in visualizing the hard DB spots through the top electrode. We found that capacitors with short- and long-lifetime distributions were broken down near and far from the edge of the capacitors, respectively. This indicates that the DB is either topography-dependent or film-quality-dependent. This work demonstrates an effective method of detecting DB in a non-destructive manner to provide an insight for achieving higher endurance HfO2-based ferroelectric capacitors.

Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments

To estimate the failure time of silicon carbide (SiC) integrated circuits in harsh environments, the activation energy (Ea) and field acceleration factor of SiC n-channel MOS (nMOS) and p-channel MOS (pMOS) were measured using time-dependent dielectric breakdown testing at constant voltage stress in the range of 25–350 °C. Ea around 300 °C was 0.7 eV for nMOS and 0.66 eV for pMOS, which was about twice as high as that below 150 °C and did not differ greatly depending on the conductivity type. The gate dielectric breakdown mechanism shifted from the 1/E model to the E model as the temperature rose, and this is thought to have caused the Ea to change. The field acceleration factor in the E model at 300 °C was 2.7 and 2.3 cm/MV for nMOS and pMOS, respectively. The maximum operating electric fields of nMOS and pMOS for a 100-year lifetime are 6.8 and −7.2 MV/cm, which are over 25% lower than the fields at room temperature, mainly due to a shift in the dominant breakdown model. A more conservative failure time design will be required for SiC-ICs exposed to high temperatures.

Probing Electronic Band Structures of Dielectric Polymers via Pre-Breakdown Conduction.

The electronic band structure, especially the defect states at the conduction band tail, dominates electron transport and electrical degradation of a dielectric material under an extremely high electric field. However, the electronic band structure in a dielectric is barely well studied due to experimental challenges in detecting the electrical conduction to an extremely high electric field, i.e., prebreakdown. In this work, the electronic band structure of polymer dielectric films is probed through an in situ prebreakdown conduction measurement method in conjunction with a space-charge-limited-current spectroscopic analysis. An exponential distribution of defect states at the conduction band tail with varying trap levels is observed in accordance with the specific morphological disorder in the polymer dielectric, and the experimental defect states show also a favorable agreement with the calculated density of states from the density functional theory. The methodology demonstrated in this work bridges the molecule-structure-determined electronic band structure and the macro electrical conduction behavior with a highly improved understanding of material properties that control the electrical breakdown, and paves a way for guiding the modification of existing material and the exploration of novel materials for high electric field applications.

Experimental investigation of time dependent dielectric breakdown and failure mechanism for Hf0.5Zr0.5O2 ferroelectric field effect transistors

The experimental investigation of the time dependent dielectric breakdown (TDDB) was performed to study the dielectric breakdown mechanisms for Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect transistors (FeFETs) with the SiO2 interfacial layer (IL). Constant voltage stress method combined with the TCAD device simulation was used to study the breakdown mechanism of the TaN/HZO/SiO2/Si gate stack. Due to the much higher electric field in the IL, the breakdown of the SiO2 IL is the major reason for the breakdown of the gate stack. In addition, it is found that the IL breakdown will speed up the disappearance of the memory window (MW), leading to the malfunction of the FeFET as a storage device. Finally, the Weibull distributions of time-to-breakdown (TBD) and charge-to-breakdown (QBD) were characterized, revealing decent TDDB performance of the FeFETs. Careful design of IL thickness is necessary to balance the tradeoff between the device performance and the reliability lifetime of HZO FeFETs.

Significantly Enhanced Breakdown Strength and Energy Density in Nanocomposites by Synergic Modulation of Structural Design and Low-Loading Nanofibers.

Polymer-based dielectric nanocomposites have attracted great attention due to the advantages of high-power density and stability. However, due to the limited breakdown strength (Eb) of the dielectrics, the unsatisfactory energy density becomes the bottleneck that restricts their applications. Here, newly designed sandwich-structured nanocomposites are proposed, which includes the introduction of low-loading 0.4BiFeO3-0.6SrTiO3 (BFSTO) nanofibers into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) matrix as the polarization layer (B-layer) to offer high permittivity and the selection of poly(methylmethacrylate) (PMMA)/P(VDF-HFP) all-organic blend film as the insulation layer (P-layer) to improve Eb of the nanocomposites. The optimized sandwich-structured PBP nanocomposite exhibits significant enhancement in Eb (668.6 MV/m), generating a discharged energy density of 17.2 J/cm3. The dielectric and Kelvin probe force microscope results corroborate that the outer P-layer has a low surface charge density, which can markedly impede the charge injection from the electrode/dielectric interface and thereby suppress the leakage current inside the nanocomposite. Furthermore, both the finite element simulations and capacitive series models demonstrate that the homogenized distribution of electric field in the PBP sandwich-structured nanocomposite favors the improvement of energy storage performance. This work not only provides insightful guidance into the in-depth understanding of the dielectric breakdown mechanism in sandwich-structured nanocomposites but also offers a novel paradigm for the development of polymer-based nanocomposites with high Eb and discharged energy density.

Contribution to the Understanding of the Dielectric Breakdown Mechanism of ZTA Ceramics

Herein, the breakdown mechanism of alumina‐based ceramics (Al2O3–ZrO2) is studied. The specimens are characterized for their density, phase structure, micromorphology, breakdown process, and breakdown channel by micro computed tomography, high‐speed cameras, etc. The study reveals that the dielectric breakdown stability of the samples shows a decreasing trend and the dielectric loss shows an upward trend with the increase of ZrO2 content. The tetragonal phase zirconia is beneficial to enhance the dielectric breakdown strength of the sample, which is related to the martensitic transformation to prevent crack propagation. Before the ceramic breakdown, the insulating oil first breaks down, causing electric sparks. Once the ceramic breakdown occurs, the charges are rearranged, and a large amount of heat energy is generated instantly to melt the substance around the breakdown channel and erupt to the surface to form pits under the action of high internal stress.

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiNx/PEALD-AlN Dual Gate Dielectric and In-Situ H2(15%)/N2(85%) Plasma Pretreatment

This paper deeply investigated the gate leakage and dielectric breakdown mechanisms of the Normally-OFF GaN MOSFET with LPCVD-SiNx/PEALD-AlN dual Gate Dielectric and in-situ H2(15%)/N2(85%) plasma pretreatment. The in-situ plasma pretreatment was performed in a PEALD system prior to the PEALD-AlN deposition. Experimental studies showed that the in-situ H2(15%)/N2(85%) plasma pretreatment is effective in improving the quality of the AlN/GaN interface, the LPCVD-SiNx/PEALD-AlN dual Gate Dielectric exhibits not only high breakdown electric field but low leakage current. Experiments have proved dominant mechanism of the leakage current through LPCVD-SiNx/PEALD-AlN Gate Dielectric is identified to be Poole-Frenkel emission at low fields and Fowler-Nordheim tunneling at high fields. Further, gate dielectric time-dependent dielectric breakdown of electric-field-accelerated and temperature-accelerated was investigated.

Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation

We use a multi-scale modeling to study the time-dependent dielectric breakdown of an amorphous (a-) HfO2 insulator in a metal–oxide–metal capacitor. We focus on the role played by electron injection in the creation of oxygen vacancies, which eventually form the percolation path responsible for dielectric breakdown. In this scenario, the electron transport through the dielectric occurs by multi-phonon trap assisted tunnelling (MPTAT) between O vacancies. Energy parameters characterizing the creation of oxygen vacancies and the MPTAT process are calculated using density functional theory employing a hybrid density functional. The results demonstrate that the formation of neutral O vacancies facilitated by electron injection into the oxide represents a crucial step in the degradation process dominating the kinetics at common breakdown fields. We further show the importance of the so-called “energetic correlation” effect, where pre-existing O vacancies locally increase the generation rate of additional vacancies accelerating the oxide degradation process. This model gives realistic breakdown times and Weibull slopes and provides a detailed insight into the mechanism of dielectric breakdown and atomistic and electronic structures of percolation paths in a-HfO2. It offers a new understanding of degradation mechanisms in oxides used in the current MOSFET technology and can be useful for developing future resistive switching and neuromorphic nanodevices.

Contribution to the Understanding of the Dielectric Breakdown Mechanism of Zta Ceramics

Contribution to the Understanding of the Dielectric Breakdown Mechanism of Zta Ceramics

Peculiar Porous Aluminum Oxide Films Produced via Electrochemical Anodizing in Malonic Acid Solution with Arsenazo-I Additive.

The influence of arsenazo-I additive on electrochemical anodizing of pure aluminum foil in malonic acid was studied. Aluminum dissolution increased with increasing arsenazo-I concentration. The addition of arsenazo-I also led to an increase in the volume expansion factor up to 2.3 due to the incorporation of organic compounds and an increased number of hydroxyl groups in the porous aluminum oxide film. At a current density of 15 mA·cm−2 and an arsenazo-I concentration 3.5 g·L−1, the carbon content in the anodic alumina of 49 at. % was achieved. An increase in the current density and concentration of arsenazo-I caused the formation of an arsenic-containing compound with the formula Na1,5Al2(OH)4,5(AsO4)3·7H2O in the porous aluminum oxide film phase. These film modifications cause a higher number of defects and, thus, increase the ionic conductivity, leading to a reduced electric field in galvanostatic anodizing tests. A self-adjusting growth mechanism, which leads to a higher degree of self-ordering in the arsenazo-free electrolyte, is not operative under the same conditions when arsenazo-I is added. Instead, a dielectric breakdown mechanism was observed, which caused the disordered porous aluminum oxide film structure.

Dielectric Polymers Tolerant to Electric Field and Temperature Extremes: Integration of Phenomenology, Informatics, and Experimental Validation.

Flexible polymer dielectrics tolerant to electric field and temperature extremes are urgently needed for a spectrum of electrical and electronic applications. Given the complexity of the dielectric breakdown mechanism and the vast chemical space of polymers, the discovery of suitable candidates is nontrivial. We have laid the foundation for a systematic search of the polymer chemical space, which starts with "gold-standard" experimental measurements and data on the temperature-dependent breakdown strength (Ebd) for a benchmark set of commercial dielectric polymer films. Phenomenological guidelines are derived from this data set on easily accessible properties (or "proxies") that are correlated with Ebd. Screening criteria based on these proxy properties (e.g., band gap, charge injection barrier, and cohesive energy density) and other necessary characteristics (e.g., a high glass transition temperature to maintain the thermal stability and a high dielectric constant for high energy density) were then setup. These criteria, along with machine learning models of these properties, were used to screen polymers candidates from a candidate list of more than 13 000 previously synthesized polymers, followed by experimental validation of some of the screened candidates. These efforts have led to the creation of a consistent and high-quality data set of temperature-dependent Ebd, and the identification of screening criteria, chemical design rules, and a list of optimal polymer candidates for high-temperature and high-energy-density capacitor applications, thus demonstrating the power of an integrated and informatics-based philosophy for rational materials design.

Diameter distribution and formation mechanism of solid-state nanopores prepared by dielectric breakdown

The diameter distribution and dielectric breakdown mechanism of solid-state nanopores in a liquid environment are discussed based on the experimental results. We discussed the nanopore formation mechanism from the viewpoint of the statistical correlation between the diameter distribution, the charge to breakdown, and the dissipated energy across the nanopore by changing the field stress. We found that high field stress increases the instability of the uniformity of the nanopore diameter. Similar to the mechanism in the solid situation, the diameter of the nanopore can be uniquely correlated to the dissipated energy in the pore formation process.

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride.

Hexagonal boron nitride (h-BN) has emerged as a promising 2D/layered dielectric owing to its successful integration with graphene and other 2D materials, although a coherent picture of the overall dielectric breakdown mechanism in h-BN is yet to emerge. Here, we have carried out a systematic study using conduction atomic force microscopy to provide insights into the process of defect generation and dielectric degradation in the progressive breakdown (PBD) and hard breakdown (HBD) stages in 2-5 nm thick chemical vapor deposition (CVD)-grown multilayer h-BN films. The PBD and HBD regimes show different behaviors. Under electrical stress in the PBD stage, defects are generated progressively in the h-BN, leading to a gradual reduction of the effective barrier resistance and continuous soft breakdowns (SBDs) of the dielectric material. Random telegraph noise nano-spectroscopy shows that low frequency noise becomes dominant after an SBD event due to the creation of additional defects around the percolation path. We also observe a wide variation in the current-voltage (I-V) breakdown plots in the PBD stage, giving rise to non-Weibull statistical distribution of the breakdown voltage. We attribute this observation to the significant thickness inhomogeneity in the CVD films. At HBD, h-BN materials are always physically removed from the film, leading to the formation of pits at the breakdown location. Interestingly, pit formation is also occasionally observed in the PBD stage under very low current compliances, suggesting that breakdown may proceed by a mixture of defect generation and material removal in h-BN CVD films.

Effect of LiF addition on sintering behavior and dielectric breakdown mechanism of MgO-based microwave dielectric ceramics

Glass-free MgO-based microwave dielectric ceramics (1-x) wt% (0.98 MgO-0.02 Al2O3)-x wt% LiF (x = 0.5, 1, 2, 3, 4) were synthesized where LiF and Al2O3 were utilized as sintering additive and reinforcement phase in MgO matrix respectively. It was found that ion substitution is apt to occur between LiF and MgO, leading to the formation of oxygen vacancies and MgF2. Nevertheless, different from ordinary liquid-phase sintering, morphologies of ceramics were distinctly altered with grains changing from polyhedron to sphere-like shape and densities underwent obvious decrease when excessive amount of LiF was introduced and we call it excessive liquid-phase sintering. Grain boundary weakening caused by this circumstance would exert an adverse effect on physical properties. Moreover, LiF addition dramatically reduced dielectric breakdown strength and altered the dielectric breakdown behavior of MgO-based ceramics, which is dominated by electrical breakdown mechanism. Combination of good properties were achieved in 1 wt% LiF modified MgO-based ceramics sintered at 950 °C which exhibited superior microwave properties (εr = 9.56, tanδ = 9.2 × 10−5, Qf = 124,600 GHz), high flexural strength (184.5 MPa), high thermal conductivity (21.3 W/(m⋅K)), high coefficient of thermal expansion (∼12 ppm/°C) and moderate electrical properties (Eb = 35.9 kV/mm, ρ = 4.9 × 1012 Ω cm).