Photoresponse Mechanism Research Articles

Photoresponsive tetracoordinate arylboron smart molecules: Strategies for molecular design and photoresponse mechanisms

AbstractPhotoresponsive smart materials, which exhibit swift or instantaneous responses to external light stimuli, are pivotal for advancing the development of novel smart devices. Among these materials, photoresponsive tetracoordinate arylboron compounds emerge as prominent molecular systems, owing to their captivating photochemical mechanisms and photophysical transformations. In recent years, these molecules have experienced notable progress, leading to the emergence of numerous organic boron photoresponsive molecular systems with innovative structures and exceptional performance. In this comprehensive review, we present a thorough examination of the latest advancements in the field, systematically elucidating the design strategies and structure‐activity relationships of these molecules. Furthermore, we delve into the photoresponse mechanisms of various molecules and summarize their unique characteristics. Ultimately, we analyze the challenges, opportunities, and prospects encountered in this exciting field of research.

CsPbBr3 perovskite quantum dots/p-GaN heterojunction for ultraviolet-visible spectrum photodetectors

All-inorganic perovskites have attracted increasing attention because of their strong environmental stability and excellent photoelectric properties. However, the limited spectral response range of perovskite photodetectors restricts them in practical applications. In this work, an ultraviolet–visible photodetector with a wide spectral response and a high responsivity was prepared by constructing a CsPbBr3 quantum dots (QDs)/p-GaN heterojunction. The type-II energy band alignment formed by the heterojunction is conducive to the transport of photogenerated carriers, resulting in a high responsivity. Under certain conditions, the device can obtain responsivity values of 5 A/W and 850 mA/W under 350 and 725 nm illumination, respectively, which are comparable to those of other perovskite-based photodetectors. In addition, the photoresponse mechanism of the device is revealed through first-principles calculations of the heterojunction and the device. The enhanced light absorption of the heterojunction and the special band bending under different bias voltages improve the photoelectric performance of the device. This work can provide valuable insights into high-performance photodetectors based on all-inorganic perovskite QDs heterojunctions in terms of band regulation and device performance improvement.

Photoconductivity and Photovoltaic Effect Strengthened via Microstructural Cotuning in Ferroelectrics: Intuitively Assessed by Macroscopic Transparency.

Photoferroelectrics that involve strong light-matter coupling are regarded as promising candidates for realizing bulk photovoltaic and photoelectric effects via light absorption. Nonetheless, understanding the photoresponse mechanism or modulation of performance from a microscopic point of view is scarcely explored through quantification of macroscopic properties. Herein, we design a model material, Gd3+-doped (K0.5Na0.5)NbO3 ferroelectric-transparent ceramics, and present an advantageous strategy to enhance the optoelectronic coupling through joint modulations of lattice distortion and oxygen vacancies, along with inner defects and ferroelectric domains. Significantly, their microcosmic manipulation can be intuitively and facilely evaluated by the optical transparency of each ceramic. An approximately 104 fold increase in conductivity under ultraviolet irradiation was produced. Under the cocoupling between external physical fields, the synergy of photoelectric stimulation increased the photoconductivity of the ceramics by 13.89 times. Additionally, a significant increase (4.5-fold) in the current output from the photovoltaic effect was achieved via ferroelectric domains of moderate size, whose size could be easily assessed by optical transmittance. In situ microscopic observations confirmed that the configuration of oxygen vacancy-dependent ferroelectric domains contributes to the enhanced optoelectronic response. This research provides a distinct way to develop inexpensive optocoupler devices and meet the requirements for multifunctional integration in single photoferroelectrics.

Revealing Bipolar Photoresponse in Multiheterostructured WTe2-GaTe/ReSe2-WTe2 P-N Diode by Hybrid 2D Contact Engineering.

The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies on 2D materials have reignited attraction in the p-n junction, with promising potential for applications in both electronics and optoelectronics. 2D materials provide exceptional band structural diversity in p-n junction devices, which is rare in regular bulk semiconductors. In this article, we demonstrate a p-n diode based on multiheterostructure configuration, WTe2-GaTe-ReSe2-WTe2, where WTe2 acts as heterocontact with GaTe/ReSe2 junction. Our devices with heterocontacts of WTe2 showed excellent performance in electronic and optoelectronic characteristics as compared to contacts with basic metal electrodes. However, the highest rectification ratio was achieved up to ∼2.09 × 106 with the lowest ideality factor of ∼1.23. Moreover, the maximum change in photocurrent (Iph) is measured around 312 nA at Vds = 0.5 V. The device showed a high responsivity (R) of 4.7 × 104 m·AW-1, maximum external quantum efficiency (EQE) of 2.49 × 104 (%), and detectivity (D*) of 2.1 × 1011 Jones at wavelength λ = 220 nm. Further, we revealed the bipolar photoresponse mechanisms in WTe2-GaTe-ReSe2-WTe2 devices due to band alignment at the interface, which can be modified by applying different gate voltages. Hence, our promising results render heterocontact engineering of the GaTe-ReSe2 heterostructured diode as an excellent candidate for next-generation optoelectronic logic and neuromorphic computing.

Dual-Electrically Configurable MoTe2/In2S3 Phototransistor toward Multifunctional Applications.

Photodetectors, essential for a wide range of optoelectronic applications in both military and civilian sectors, face challenges in balancing responsivity, detectivity, and response time due to their inherent unidirectional carrier transport mechanism. Multifunctional photodetectors that address these trade-offs are highly sought after for their potential to reduce costs, simplify system design, and surpass Moore's Law limitations. Herein, we present a multimodal phototransistor based on a 2D MoTe2/In2S3 heterostructure. Through dual electrical modulation employing bias voltage and gate voltage, we engineer the energy band to achieve switchable photoresponse mechanisms between photoconductive and photovoltaic modes. In photoconductive mode, the device exhibits a responsivity of 320 A/W and a specific detectivity of 1.2 × 1013 Jones. Meanwhile, in photovoltaic mode, it exhibits a light on/off ratio of 2 × 105 and response speed of 0.68/0.60 ms. These capabilities enable multifunctional applications such as high-resolution imaging across various wavelengths, a conceptual optoelectronic logic gate, and dual-channel optical communication. This work makes an advancement in the development of future multifunctional optoelectronic devices.

Photoresponse enhancement mechanism of CuInP2S6-based device by coupling piezo-phototronic effect and ferroelectric polarization and its application of architecture monitoring

With the arrival of the information society, multifunctional integrated devices based on two-dimensional (2D) materials are crucial for promoting advanced technology. However, the impact of coupling of various physical effects on their performance remains unexplored. Herein, the influence of coupling of piezoelectricity, photoexcitation and ferroelectricity within 2D ferroelectric CuInP2S6 (CIPS), that is, the piezo-phototronic effect and the bulk photovoltaic effect, on the device photoelectric performance have been investigated. Our experiments show that the piezo-phototronic effect can improve the photoelectric performance of the poled devices by 1.36 times, and ferroelectric polarization in turn increases the impact of the piezo-phototronic effect on the performance of the poled devices by 3.8 times. Systematically band diagram analysis reveals that this mutual enhancement mechanism can be attributed to the contribution of piezoelectric polarization charges and Cu+ ions movement to carrier migration, which was supported by Kelvin probe force microscope, STEM, and first-principles calculations. Furthermore, an architecture monitoring system based on a CIPS device was constructed to detect building tilt in real-time. Our work provides a paradigm for enhancing the photoelectric performance of 2D ferroelectrics and has profound significance in investigating multi-physics effects coupling mechanisms in a single material.

Robust Deep UV Photodetectors Based on One‐Step‐Grown Polycrystalline Ga2O3 Film via Pulsed Laser Deposition toward Extreme‐Environment Application

AbstractGallium oxide (Ga2O3), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) range, has attracted significant attention in optical filter‐free photodetectors. In practical terms, DUV photodetectors employed in extreme conditions, for example, flame detection and space exploration, face the challenges of performance degradation caused by high/low‐temperature transformation. Here, DUV photodetectors are tailored with high durability and stability by one‐step‐grown β‐Ga2O3 films via pulsed laser deposition. A high‐oxygen‐pressure scheme effectively addresses the issue of film‐free deposition at specifically high temperatures, facilitating the formation of polycrystalline high‐resistivity β‐Ga2O3 films. As a result, the devices exhibit outstanding performance, including a low dark current (4.4 pA @30 V), high photoresponsivity (147.36 A W−1), and fast response time (3.1/22.6 ms). Additionally, the photoresponse performance shows minimal degradation at high temperatures up to 300 °C and even improves at low temperatures down to −100 °C, ranking it among the most robust DUV photodetectors. The mechanism of photoresponse, involving the exciton formation, bandgap evolution, carrier‐phonon scatter, etc., is also elucidated in a wide temperature range. This work provides an efficient solution for developing robust Ga2O3 DUV photodetectors with excellent performance for extreme‐condition applications.

A Reconfigurable All-Optical-Controlled Synaptic Device for Neuromorphic Computing Applications.

Retina-inspired visual sensors play a crucial role in the realization of neuromorphic visual systems. Nevertheless, significant obstacles persist in the pursuit of achieving bidirectional synaptic behavior and attaining high performance in the context of photostimulation. In this study, we propose a reconfigurable all-optical controlled synaptic device based on the IGZO/SnO/SnS heterostructure, which integrates sensing, storage and processing functions. Relying on the simple heterojunction stack structure and the role of energy band engineering, synaptic excitatory and inhibitory behaviors can be observed under the light stimulation of ultraviolet (266 nm) and visible light (405, 520 and 658 nm) without additional voltage modulation. In particular, junction field-effect transistors based on the IGZO/SnO/SnS heterostructure were fabricated to elucidate the underlying bidirectional photoresponse mechanism. In addition to optical signal processing, an artificial neural network simulator based on the optoelectrical synapse was trained and recognized handwritten numerals with a recognition rate of 91%. Furthermore, we prepared an 8 × 8 optoelectrical synaptic array and successfully demonstrated the process of perception and memory for image recognition in the human brain, as well as simulated the situation of damage to the retina by ultraviolet light. This work provides an effective strategy for the development of high-performance all-optical controlled optoelectronic synapses and a practical approach to the design of multifunctional artificial neural vision systems.

Deep-ultraviolet n-ZnGa2O4/p-GaN heterojunction photodetector fabricated by pulsed laser deposition.

Zinc gallium oxide (ZnGa2O4) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGa2O4 thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting in improved crystalline quality. The ZnGa2O4 film exhibited a bandgap of 4.93 eV, calculated through absorption spectra. A heterojunction photodetector (PD) was constructed, demonstrating a rectification effect, an on/off ratio of 12,697 at -5.87 V, a peak responsivity of 14.5 mA/W, and a peak detectivity of 1.14 × 1012 Jones (262 nm, -6 V). The PD exhibited a fast response time (39 ms) and recovery time (30 ms) under 262 nm illumination. The band diagram based on the Anderson model elucidates the photoresponse and carrier transport mechanism. This work paves the way for advancing next-generation optoelectronics.

Autonomous Light Intensity Adaptation in an Energy‐Efficient Retinomorphic Organic Ferroelectric Neuristor

Autonomous Light Intensity Adaptation in an Energy‐Efficient Retinomorphic Organic Ferroelectric Neuristor

Photo-thermoelectric effect-driven detection of optical communication light in graphene/hBN heterostructures

We report on the photodetection properties of high-quality graphene encapsulated by hexagonal boron nitride under illumination with optical communication light. We demonstrate a gate-tunable photocurrent and zero-bias switching cycle operation at RT. Through gate and temperature-dependent photocurrent measurements, we determine that the dominant photoresponse mechanism is the photo-thermoelectric effect. At low temperatures, the photocurrent in finite doping regions correlates with the Seebeck coefficient, while sharp peaks emerge near the charge neutrality point due to an edge-excited photocurrent. Our study provides guidelines for high-performance graphene-based optoelectronic devices.

Multilayer MoS 2 Photodetector with Broad Spectral Range and Multiband Response

As a typical 2-dimensional material, molybdenum disulfide (MoS 2 ) has atomic thickness in longitudinal size, showing unique optical and electrical properties. MoS 2 has become a research hotspot in the field of photodetection. The properties of MoS 2 devices are highly dependent on their material characteristics, device structures, and fabrication techniques. Therefore, their photoresponse characteristics may be determined by multiple physical effects, which contribute to the development of MoS 2 -based broadband photodetectors. Here, we present an experimental study on the broadband MoS 2 photodetector ranging from 410 to 1,550 nm, obviously wider than that of conventionally reported MoS 2 photodetectors. Our results indicate that the performance of the MoS 2 device is dependent on the fabrication procedures. Under the optimal process, the maximum responsivity is 33.75 A W −1 and the corresponding specific detectivity is 6.1 × 10 11 cm Hz 1/2 W −1 at 480-nm illumination. Through a series of electrical and optoelectronic experimental analysis, the working mechanisms of multiband photoresponse of the MoS 2 device are clarified.

Molecular engineering and structure-property relationship based on D-A chlorophyll derivative and the application in organic solar cells.

The photoactive layer materials of organic solar cells (OSCs) play a critical role in achieving excellent performance. Chlorophyll derivatives are commonly used due to their environmental friendliness, low cost, and easy accessibility. However, the efficiency of OSCs based on chlorophyll is limited by their photoelectric properties. Here, we focused on the D-A structure of chlorophyll derivative ZnChl-1 and designed four molecules through rational molecular engineering. The photoelectric properties at the microscopic level were systematically studied using density functional theory (DFT). Our findings reveal that T-ZnChl-1 with triphenylamine donor unit has a smaller energy gap and ionization energy, as well as a larger spectral red shift and absorption range. This suggests that intramolecular charge transfer will be enhanced, leading to an improvement in short-circuit current. Furthermore, Y6 is used as the acceptor to construct the heterojunction interfaces. The results indicate that the T-ZnChl-1/Y6 interface exhibits more charge transfer states and higher exciton dissociation rate KCS, which will promote charge separation and lead to excellent photovoltaic performance. This work clarifies the structure-property relationship of chlorophyll derivatives and the photo-response mechanism of intermolecular charge transfer, providing a theoretical basis for developing valuable chlorophyll-based OSCs.

Sm, Pt asymmetric n- and p-type contacts in WSe2 phototransistor for high-performance broadband photodetection

The development of high-performance broadband photodetectors working at room temperature is still attractive. The Schottky barrier phototransistor based on asymmetric junction seems to be endowed with such potential—as photodetectors with low device power consumption and high photoresponse; however, it is rarely studied. Herein, a Sm–WSe2–Pt phototransistor with asymmetric metal contacts is constructed, and it is systematically investigated for their electronic and photoelectronic tunability via gate voltage, wavelength, and illumination power density. It was found that the tunable photogating process dominates the photoresponse mechanism, which allows for an excellent broadband photodetection from 300 to 1000 nm wavelength. In addition, the responsivity (R) and specific detectivity (D*) at 450 nm can reach 1723 A/W and 2.3 × 1013 Jones, respectively, while that of infrared illumination of 900 nm can reach 4.7 A/W and 3.1 × 1010 Jones, respectively. In addition, the device exhibits obvious photoresponse at zero bias, the R and D* can reach up to 27 mA/W and 8.5 × 1010 Jones, which realizes self-driven photodetection. This work provides an optimal option for realizing high-integrated, high-performance, low-power-consuming, and room-temperature-working broadband photodetectors.

Synthesis and Characterization of Novel Schiff Base for Enhanced Dye-Sensitized Solar Cell Photo-Response Mechanism

Synthesis and Characterization of Novel Schiff Base for Enhanced Dye-Sensitized Solar Cell Photo-Response Mechanism

Organic High-Temperature Synaptic Phototransistors for Energy-Efficient Neuromorphic Computing.

Organic optoelectronic synaptic devices that can reliably operate in high-temperature environments (i.e., beyond 121°C) or remain stable after high-temperature treatments have significant potential in biomedical electronics and bionic robotic engineering. However, it is challenging to acquire this type of organic devices considering the thermal instability of conventional organic materials and the degradation of photoresponse mechanisms at high temperatures. Here, high-temperature synaptic phototransistors (HTSPs) based on thermally stable semiconductor polymer blends as the photosensitive layer are developed, successfully simulating fundamental optical-modulated synaptic characteristics at a wide operating temperature range from room temperature to 220°C. Robust optoelectronic performance can be observed in HTSPs even after experiencing 750 h of the double 85 testing due to the enhanced operational reliability. Using HTSPs, Morse-code optical decoding scheme and the visual object recognition capability are also verified at elevated temperatures. Furthermore, flexible HTSPs are fabricated, demonstrating an ultralow power consumption of 12.3 aJ per synaptic event at a low operating voltage of -0.05mV. Overall, the conundrum of achieving reliable optical-modulated neuromorphic applications while balancing low power consumption can be effectively addressed. This research opens up a simple but effective avenue for the development of high-temperature and energy-efficient wearable optoelectronic devices in neuromorphic computing applications.

Crystal structure reveals the binding mode and selectivity of a photoswitchable ligand for the adenosine A2A receptor

Rational synthetic expansion of photoresponsive ligands is important for photopharmacological studies. Adenosine A2A receptor (A2AR) is stimulated by adenosine and related in Parkinson's disease and other diseases. Here, we report the crystal structure of the A2AR in complex with the novel photoresponsive ligand photoNECA (blue) at 3.34 Å resolution. PhotoNECA (blue) was designed for this structural study and the cell-based assay showed a photoresponsive and receptor selective characteristics of photoNECA (blue) for A2AR. The crystal structure explains the binding mode, photoresponsive mechanism and receptor selectivity of photoNECA (blue). Our study would promote not only the rational design of photoresponsive ligands but also dynamic structural studies of A2AR.

Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging.

The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here,the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed.It ishoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.

Application of Reversible Four-Dimensional Printing of Shape Memory Alloys and Shape Memory Polymers in Structural Engineering: A State-of-the-Art Review.

The rapid development and advancements in field of shape memory alloys (SMAA) has tremendously increased the progress in four-dimensional (4D) printing. The conventional 4D printing will require skilled manpower but utilization of reversibility aspect achieved using self adjusting external stimuli will eliminate the necessity of sophisticated devices and human intervention in 4D printing. The components created using reversible 4D printing can be reused after each recovery cycle that suits the current industry requirements. This review is divided into three sections: The first section starts with a detailed illustration of different mechanisms associated with SMAA and shape memory polymers SMPP along with an illustration of realistic 3D-printed SMAA and SMPP. The second section of this paper deals with the different methods of manufacture with the advantages and disadvantages of different types of SMAA. The third section deals with the mechanisms associated with SMPP, namely (1) Thermo-responsive mechanism, (2) Chemo-responsive mechanism, and (3) Photo-responsive mechanism along with a detailed insight into the aspect of repeatability and reversibility. The fourth section presents an exhaustive review of the application of SMAA and SMPP in civil engineering. The last section of this work throws light on the challenges faced in 4D reversible printing of SMAA and SMPP along with the potential solutions and presents directions for future research.

Effect of oxygen and nitrogen sensitization on structural, optical and electrical properties of PbSe thin films

An effective two-step sensitization technique was implemented in PbSe thin films, leading to a remarkable improvement in the optoelectronic performance of PbSe photodetectors. The phase composition, surface and cross-sectional morphology, temperature-dependent carrier concentration and mobility as well as the detectability of PbSe films after sensitization were systematically investigated using characteristic techniques. The optimal PbSe film oxygen sensitized at 450 °C exhibited a room-temperature photodetection with a carrier concentration of 5.31 × 1016 cm−3, carrier mobility of 16.52 cm2/V−1s−1, and detectivity of 2.25 × 109 Jones. High-temperature argon heat treatment and oxygen sensitization of PbSe films are expected to suppress recombination losses and significantly improve the optoelectronic properties of sensitized PbSe films due to enhanced carrier separation and transport. The enhanced photoresponse mechanism of the PbSe films through two-step sensitization method was also discussed. These results suggest that the proposed method can be applied to high-performance lead selenide photodetectors.