Meandering Technique Research Articles

Novel printed passive ultra high frequency radio frequency identification antenna using meander technique

<p>In this paper, a novel radio frequency identification (RFID) antenna using a meander technique associated with a slotted patch is studied for RFID applications in the ultra high frequency (UHF) band [867.5-868 MHz]. The proposed RFID antenna is designed on a Kapton substrate with dielectric constant 3.5 and loss of 0.0027. It consists of two opposite meander line antennas of 8 turns each one and interconnected to ALIEH H3 microchip associated to two slotted patch’s with a global size 105×25×0.1 mm<sup>3</sup>. The proposed RFID antenna is designed and simulated using CST MWS as an electromagnetic solver. The results of the simulation show a return loss of -22.64 dB at 868 MHz, a reading distance of around 5 m, and a simulated input impedance of the antenna are 31.72+j109.68 Ω at the operating frequency 868 MHz.</p>

Design of a Circularly Polarized Micro-Strip Antenna for Aircraft Tracking Based on BeiDou III Compatible with Multi-Navigation System.

This paper proposed a right-handed circularly polarized (RHCP) micro-strip antenna for multi-navigation system applications. The size of the antenna is 70 mm × 70 mm × 2 mm, which is fabricated on an FR4 substrate. A meandering technique on a patch layer and asymmetrical defected ground structures (DGS) are employed to achieve the purpose of miniaturization and increase the bandwidth of the axial ratio. The prototype of this antenna is fabricated according to simulations where the bandwidth of return loss, bandwidth of axial ratio, and radio pattern are further testified. The bandwidth of return loss (S11) and axial ratio (AR) of the antennas are from 1.540 GHz to 1.612 GHz and 1.554 GHz to 1.601 GHz, which would be available for L1 of GPS, L1 of SBAS, E1 of Galileo as well as B1I and B1C of BDS-3, the last two of which can be used for aircraft tracking. The relative bandwidth is 2.98%, which satisfies the standard of wide-band patch antennas.

Frequency Switchable Global RFID Tag Antennae with Metal Compatibility for Worldwide Vehicle Transportation.

This paper presents an effective way to design an RFID tag antenna to operate at three different frequencies by incorporating a switching technique. PIN diode has been used to switch the RF frequency because of its good efficiency and simplicity. The conventional dipole-based RFID tag has been improvised with added co-planar ground and PIN diode. The layout of the antenna is designed with a size of 0.083 λ0 × 0.094 λ0 at UHF (80-960) MHz, where λ0 is the free-space wavelength corresponding to the mid-point of the targeted UHF range. The RFID microchip is connected to the modified ground and dipole structures. Bending and meandering techniques on the dipole length help to match the complex chip impedance with the dipole impedance. Additionally, it scales down the total structure of the antenna. Two PIN diodes are placed along the dipole length at appropriate distances with proper biasing. The ON-OFF switching states of the PIN diodes enable the RFID tag antenna to switch over the frequency ranges (840-845) MHz (India), 902-928 MHz (North America), and 950-955 MHz (Japan).

Flexible Planar Monopole Built-in GIS PD Sensor Based on Meandering Technology.

To address the problem of low space utilization of existing rigid Ultra-High Frequency (UHF) sensors for partial discharge (PD) in Gas-Insulated Switchgears (GIS) and the problem of disrupting the electric field distribution inside the GIS. This paper draws on the idea of flexible wearable antennas and introduces planar monopole antennas commonly used in the communication field as GIS PD detection sensors and carried out research on flexible planar monopole sensing technology built into GIS PD. The VSWR of monopole antenna in the UHF low band is optimized by the meandering technique. The size of the designed flexible antenna is 142 mm × 195 mm × 0.28 mm. The simulation and physical test results show that the improved monopole antenna with meandering technology has a VSWR of ≤2 in the frequency bands 570 MHz–830 MHz, 1.38 GHz–1.8 GHz, and 2.2 GHz–2.76 GHz when the bending radius is 0 mm, 200 mm, and 400 mm, respectively. The VSWR in the frequency band 450 MHz–3 GHz is ≤5. A 220 kV GIS PD detection platform was built to test the performance of the designed antenna, and the results showed that the antenna could detect the PD signal after bending deformation with a high Signal Noise Ratio (SNR).

Isolation enhancement for four‐element MIMO antenna by using novel meandering technique

AbstractThe paper proposes a four‐element printed multiple‐input‐multiple‐output (MIMO) antenna with high isolation achieved by employing a compact decoupling method. The optimal shaping (meandering) of the monopole strip is adopted to realize decoupling at the working frequency band ranging from 5.004 to 5.320 GHz. The ports isolation and are improved by using self‐meandering technology with transmission zero occurring at the frequencies of 5.004 and 5.320 GHz, respectively. Meanwhile, the isolation is also greatly increased. The decoupling technique can significantly improve the isolations between the four ports of the proposed antenna, without the extra‐added structure. A four‐element MIMO antenna with an edge‐to‐edge spacing of 0.069 ( is the wavelength at 5.162 GHz in free space) is fabricated and measured. In the experiment, the proposed MIMO antenna has a relative bandwidth (reflection coefficient of −10 dB) of 6.12% with a range from 5.004 to 5.32 GHz. In addition, this design can significantly obtain higher port isolation, antenna efficiency, gain, and a lower envelope correlation coefficient (ECC).

Equal/unequal half mode substrate integrated waveguide filtering power dividers using an ultra-compact metamaterial unit-cell

Abstract In this paper, a novel ultra-compact metamaterial unit-cell is introduced. The proposed unit-cell consists of one modified rings which has been designed based on the fractal technique and meander technique. These techniques are used to reduce the physical size of the conventional complementary split ring resonators (CSRRs). In the proposed metamaterial unit-cell which is called the fractal/meander CSRR (FMCSRR), the slot lines in the conventional CSRRs are replaced by the fractal and meander slots, simultaneously. The FMCSRR unit-cell is a planar metamaterial element which exhibits negative permittivity and is considered as electric dipole when excited by an axial electric field. Thus, the FMCSRR unit-cell is modeled as a shunt resonator tank. Therefore, by using the proposed FMCSRR configuration, all of the interior space of the ring has been used and the slot lines have been increased. Consequently, the higher inductance has been achieved and the resonance frequency of the proposed FMCSRR unit-cell becomes lower compared with the conventional CSRR. That’s mean the electrical size of the introduced unit-cell FMCSRR unit-cell is smaller than the conventional CSRR with the same physical sizes. A microstrip notch band filter, a microstrip band-pass filter, a half mode substrate integrated waveguide (HMSIW) band-pass filter and three HMSIW filtering power dividers (FPDs) with different power division ratios of 1:1, 1:4, and 1:8 have been designed to illustrate the ability of the proposed FMCSRR unit-cell in the size reduction. All of the designed devices operated at 2.4 GHz which are suitable for WLAN applications. For verification the performance of the utilized techniques in miniaturization of the dimension, the designed equal/unequal HMSIW FPDs have been fabricated and tested. A reasonable agreement between simulated and measured results has been achieved. The results confirmation that a miniaturization about 79% has been obtained. The total size of the proposed HMSIW FPDs are about 0.09λ g × 0.09λ g. The proposed HMSIW FPDs have many advantages in terms of compact size, low insertion loss, high selectivity, easy integration with the other planar circuits, and controllable bandwidth.

Design and performance analysis of a low-pull-in-voltage RF MEMS shunt switch for millimeter-wave therapy, IoT, and 5G applications

Recent advancements in wireless communication systems utilize miniaturized devices based on microelectromechanical system technology for present and future 5G wireless applications. Nowadays, RF devices are utilizing frequencies up to 30 GHz with substantial signal propagation that leads to a slow data rate. On the other hand, there is a huge spectrum available in the millimeter-wave frequency range of 30–300 GHz. The millimeter-wave spectrum is attractive for the development of smart systems based on 5G technology. In this paper, a low-pull-in-voltage capacitive type RF MEMS switch is proposed to operate at frequencies above 30 GHz. The switch is proposed with a new iterative meandering technique where the span length of each section in the meanders differs relative to the first section. A low pull-in voltage of 1.8 V is achieved with a large capacitance ratio of 63. The switch exhibits low insertion loss of −0.24 dB at 41 GHz and possesses high isolation of −46.7 dB at 38 GHz. The design is validated by comparing the theoretical and simulated results, and the switch can be efficiently utilized for millimeter-wave applications.

A New Compact and Low loss UHF RFID TAG

This paper aims to present a new compact and low loss UHF RFID TAG using meander technique to obtain a miniaturized Design validated to operate in Moroccan UHF band. The proposed RFID TAG is designed on PI substrate with a relative dielectric constant of 3.5, tangent loss of 0.0027 and height0.0508mm. Using an EM solver, the proposed design is matched to ALIEN H3 microchip with ZMicrochip=30.39-i*211 Ohm, it’s simulated and confirmed in Moroccan UHF band with a return loss around -20.49dB at 868MHz with a bandwidth of 16.8MHz, a simulated gain 1.82dBi and a good theoretical read range about 2.6m. The global dimension of the structure is 25×70 mm2 which is λ/14×λ/5 mm2, it’s very suitable for RFID applications that required a compact and integrated RFID TAG with a middle-read range.

Ultra-Compact Dual-Band Half-Mode substrate integrated waveguide filter and filtering power divider based on metamaterial concept

In this paper, a novel dual-band (DB) half-mode substrate integrated waveguide (HMSIW) filter and three novel equal/unequal DB HMSIW filtering power dividers (FPDs) based on the metamaterial concept with ultra-compact dimensions are proposed. The working principle of the proposed configurations is based on the theory of evanescent-mode propagation. Based on the metamaterial concept, a novel compact metamaterial unit cell with double negative permittivities by combining two different types of metamaterial unit cells has been introduced. By loading the proposed metamaterial unit cell with dual negative effective permittivities at different frequencies on the HMSIW surface, two forward passbands have been generated, independently. These two passbands are located below the waveguide cut-off frequency of the dominant mode in the HMSIW structure, which have been designed for WiMAX and WLAN applications. The resonance frequencies of each metamaterial unit cells can be arbitrarily regulated. Accordingly, by resizing the dimensions of each unit cells, the center frequencies of the introduced unit cell could be separately controlled. Four different techniques have been utilized to reduce the size of the proposed devices, which are the evanescent mode technique, HMSIW technique, meander technique, and fractal technique. To illustrate the performance of the proposed structures, the designed dual-band filters (DBFs), and equal DB FPD have been fabricated and measured. A reasonable agreement between simulated and measured results has been achieved. The total size of the proposed HMSIW DBF and FPD is about 0.10 λg × 0.10 λg. The proposed devices have many advantages in terms of compact size, low insertion loss, high selectivity, easy integration with the other planar circuits, and flexible bandwidth allocations.

Performance Comparison Of Shunt Rf Mems Switches

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

An intensive approach to optimize capacitive type RF MEMS shunt switch

Optimization of the RF MEMS switch is essential to enhance its performance characteristics at high frequency Millimeterwave applications. Many optimization techniques have been proposed based on design factors and output responses but not confined with the resonant frequency of RF transmission signal. In this paper, a novel optimization technique is proposed using Multiphysics FEM simulations based on electromagnetic and electromechanical studies. A novel Capacitive type of RF MEMS shunt switch is designed by using iterative meander technique and optimized at the resonant frequency of 41 ​GHz which can efficiently used for millimeter wave applications up to 60 ​GHz. The proposed optimization model which is a novel bottom – up approach consists of intermediate steps for optimization of various layers of switch from substrate to beam. The CPW transmission line with 60/100/60 as G/S/G and having 0.5 ​μm as thickness is considered to allow the frequencies up to 60 ​GHz. The width of the suspended Beam of switch is optimized to obtain up-state capacitance of 37 ​fF which allows the RF signal at 41 ​GHz. Parametric analysis has been carried out to obtain optimized thickness of each layer. Two types of switches other than Fixed – Fixed beam are designed using meandering technique to reduce pull in voltage. Among these the proposed Iterative meander switch shows very low pull in voltage of 1.4 ​V and also shows good return loss of −48.9 ​dB at 41 ​GHz and high isolation of −48.42 ​dB at 38 ​GHz. The proposed switches which are optimized at 41 ​GHz does not contains the perforations and suffers from serious stiction problems at downstate. Hence, perforations are introduced in switch membrane and fabricated using surface micromachining technology. The optimized iterative meander switch shows low pull – in voltage of 1.85 ​V which is closely approximated to the simulated value.

Design and Analysis of Novel RF-MEMS Capacitive Type Shunt Switch for 5G Applications

This paper presents the design and analysis of the RF-MEMS Capacitive type switch. Here, we have proposed different stages of shunt switches for better performance. The objective of the proposed work is to design different beam structures and to calculate pull-in voltage with various gaps, beam thickness, and materials in FEM tool. By decreasing the pull-in voltage we have taken perforations and different meandering techniques (uniform and non-uniform). The material selection impacts the switch performance, here the dielectric material is taken as silicon nitride, the beam material is considered as gold, because of its high conducting material. The pull-in voltage of the proposed non-uniform meander type switch is 1.9 V, the RF-performance is measured in the HFSS and ADS equivalent circuit simulator tools, the return and insertion losses are obtained as −41.74 dB and -0.95 dB at 43 GHz, 40.10 GHz. The switch measured better isolation as – 36.25 dB, -20.55 dB at 20-40 GHz. The switch performance is obtained at 20-50 GHz range, therefore it can be feasible for 5G applications.

A Flexible Miniaturized Wideband Branch-Line Coupler Using Shunt Open-Stubs and Meandering Technique

A Flexible Miniaturized Wideband Branch-Line Coupler Using Shunt Open-Stubs and Meandering Technique

Design of Step down Structure RF-MEMS Shunt Capacitive Switch for Low-Pull-In Voltage

In this paper, designs and simulations of a new RF MEMS step-down structure of a capacitive shunt switch using different meandering methods are presented. The beam and dielectric materials are taken as gold and silicon nitride for the proposed switch. The switch required actuation voltage is 7.9 V for the non-uniform one meander technique.

Beam and dielectric materials impact on improvement of the performance of a novel capacitive shunt RF MEMS switch

AbstractThis paper presents a novel radiofrequency micro‐electro‐mechanical systems (RF MEMS) shunt capacitive switch having high isolation and low insertion loss for microphone applications. The device optimization and various electromechanical analysis are performed using a finite element modeler (FEM) solver. The proposed switch results in a pull‐in voltage of 36.88 V to displace movable beam 2/3rd of its initial gap. By varying beam material, dielectric material, beam‐dielectric thickness, and air gap between movable beam and dielectric layer, various electromechanical and electromagnetic analyses are carried out. For better isolation, silicon nitride (Si3N4) is used for the dielectric layer than hafnium oxide (HfO2) and silicon carbide (SiC). To achieve maximum displacement of the beam, various materials such as aluminum, gold, nickel, and copper are chosen; among all, this gold shows high displacement because of its good conductivity. By implementing various meandering techniques along with perforations, pull‐in voltage and stiction problems are reduced. The switch exhibits good return loss of −28 dB and insertion loss of −0.017 dB during on‐state at 5 GHz and high isolation of −41.26 dB at 10.5 GHz during off‐state. The proposed switch is used at the subsystem/device level in the future microphone, aircraft navigation, and satellite applications.

Design, simulation and analysis of RF-MEMS shunt capacitive switch for 5G application

This paper reports electromechanical and electromagnetic analysis of capacitive type RF-MEMS switches for 5G applications with three different meandering techniques i.e. fixed–fixed, crab and U-shaped meander. Design and simulation of the switch is performed by electromechanical analysis for the proposed switches having movable beam with gold as material and silicon nitride as dielectric material. Among the three types of proposed meanders the U-shaped meander switch possess a pull in voltage of 3.96 V with a beam thickness of 0.5 μm. The RF performance analysis of switch is done by using HFSS software and the proposed U-shaped switch results in low insertion loss of − 0.59 dB and return loss of − 12.5 dB at 41 GHz. The isolation of the switch produces − 26 dB at 40 GHz. Material optimization for beam and dielectric medium is carried out using Ashby’s methodology. These switches exhibits good performance up to 50 GHz and is effectively utilized in 5G communication devices.

Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

This paper deals with the study of dimple type RF MEMS capacitive shunt switch using different meandering techniques for high isolation and low actuation voltage. The novelty of the proposed RF MEMS switch is it incorporates the meanders and dimples, which help to reduce the actuation voltage. The proposed switch structure is optimized, designed, and simulated with FEM analysis such as electromechanical and electromagnetic by using COMSOL and HFSS tools respectively. The best performance of the switch is observed by varying different parameters such as beam material, beam thickness, dielectric thickness, and airgap. The proposed switch with different meandering techniques attains the pull-in voltage in the range of 10.3-46 V, particularly the three uniform meander technique has low actuation voltage of 10.3 V. The RF performance of the device is particularly tuned in the range of 26.5-40 GHz frequency range and it is analyzed for all types of meanders. Among them, the non-uniform single meander has attained the best isolation of -54.13 dB at 40 GHz in the off state. The insertion and return losses of the device are -0.514 dB and -17.35 dB over 1-40 GHz frequency in on state.

Meander bowtie Antenna for Wearable Application

This paper proposes a flexible compact bowtie antenna for medical application that operates at 2.45 GHz. The proposed antennas are miniaturized using meander technique. Both substrates and conducting material of the antenna are made of flexible material semi-transparent film as the substrate and shieldit fabric as the conducting material which suitable for wearable and on body application. The results show that the total length of the antenna is significantly reduced by up to 38%. However, the gain of the antenna is slightly decreased when the size of the antenna become smaller. The results of this research could provide guidance and has significant implication for future development of wearable electronics especially in medical monitoring application.

Designing of a New Miniaturized Tag Antenna Using the Meander Technique and Low Cost Paper Substrate for Bottle Labeling Applications

This paper presents a new design of RFID tag antenna attached to a glass bottle by using the meander technique and a paper substrate operating in the UHF RFID band. The proposed design is divided into two parts. The first part is about designing a tag antenna simulated by using CST and HFSS 3D electromagnetic simulators; the second part is about designing a whole system containing a bottle attached to the proposed tag antenna simulated using CST simulation software. The simulated results obtained for both the tag antenna and the whole system present good performances in terms of reflection coefficient, radiation diagram and read range. Finally, Due to the simulated results, the proposed RFID tag antenna is characterized by Low cost, good read range (5.17m) and the use of a paper substrate ready to be attached to a glass bottle which can be identified and tracked by a RFID reader.

Analysis of uniform structured RF MEMS switch with different uniform and non-uniform meandering techniques

This paper mainly focuses on the investigation of different meandering techniques for the MEMS RF shunt capacitive switch. It involves three meandering techniques for the switch, namely zig-zag, plus and three square meander. Actuating beam provided with rectangular holes, with these parameters switches brings about low pull-in voltage, higher switching speed, good performance of isolation, less spring constant, low insertion and return losses. In addition, from obtained results, it is noted that the rectangular holes give the better outcomes, when contrasted with square and cylindrical perforations present on the beam. All the meandering techniques are applied for the movable bridge; improved performance is observed by comparing these structures, by changing the gap between the electrodes of each structure. Another criteria is gap, performance observed for different air gaps 0.8, 1 µm between top and bottom electrode. Materials used for the dielectric layer are HfO2 and Si3N4. ON state capacitance for HfO2, Si3N4 are 4.07, 3.81 fF. Similarly, OFF state capacitance for the two dielectric materials are 49, 26.9 fF respectively. Poly tetra fluoro ethylene (PTFE) is the material utilized for the deflecting beam. Pull-in voltages for the step switch with three square meanders are 1.09 V at 0.8 µm gap. RF performance analysis of the step switch with three square is attained as insertion loss is below − 0.07 dB, return loss was observed below − 60 dB over the frequency range of 1–40 GHz frequency range. Isolation peak noted at 61 dB at 28 GHz frequency. Switching time of the step switch with three square meander are 10.25 µs.