Maximum Extreme Ultraviolet Research Articles

Self-consistent integrated modeling of combined hybrid discharge-laser produced plasma devices for extreme ultraviolet metrology

Discharge- and laser-produced plasma (DLPP) devices are being used as light sources for extreme ultraviolet (EUV) generation. A key challenge for both, DPP and LPP, is achieving sufficient brightness to support the throughput requirements of nanometrology tools. To simulate the environment of a hybrid DLPP device and optimize the EUV output, we have developed an integrated HEIGHTS-DLPP computer simulation package. The package integrates simulation of two evolving plasmas (DPP and LPP) and includes modeling of a set of integrated self-consistent processes: external power source and plasma energy balance, plasma resistive magnetohydrodynamics, plasma heat conduction, detailed radiation transport (RT), and laser absorption and refraction. We simulated and optimized DLPP devices using Xe gas as a target material. We synchronized the external circuit parameters, chamber gas parameters, and laser beam temporal and spatial profiles to achieve maximum EUV output. The full 3D Monte Carlo scheme was integrated for detailed RT and EUV output calculations in Xe using more than 3600 spectral groups. The modeling results are in good agreement with Julich Forschungszentrum experimental data. Theoretical models, developed and integrated into the HEIGHTS package, showed wide capabilities and flexibility. The models and package can be used for optimization of the experimental parameters and settings, investigation of DLPP devices with complex design, analyzing the impact of integrated spatial effects and working timeline arrangement on the final EUV output, and EUV source size, shape, and angular distribution.

Efficient extreme ultraviolet emission from one-dimensional spherical plasmas produced by multiple lasers

We demonstrate high conversion efficiency for extreme ultraviolet (EUV) emission at 6.5–6.7 nm from multiple laser beam-produced one-dimensional spherical plasmas. Multiply charged-state ions produce strong resonance emission lines, which combine to yield intense unresolved transition arrays (UTAs) in Gd, Tb, and Mo. At an optimum laser intensity of 1 × 1012 W/cm2, which is estimated to yield an electron temperature of around 100 eV, the maximum in-band EUV conversion efficiency (CE) was observed to be 0.8%, which is one of the highest values ever reported due to the reduction of plasma expansion loss.

The role of plasma evolution and photon transport in optimizing future advanced lithography sources

Laser produced plasma (LPP) sources for extreme ultraviolet (EUV) photons are currently based on using small liquid tin droplets as target that has many advantages including generation of stable continuous targets at high repetition rate, larger photons collection angle, and reduced contamination and damage to the optical mirror collection system from plasma debris and energetic particles. The ideal target is to generate a source of maximum EUV radiation output and collection in the 13.5 nm range with minimum atomic debris. Based on recent experimental results and our modeling predictions, the smallest efficient droplets are of diameters in the range of 20–30 μm in LPP devices with dual-beam technique. Such devices can produce EUV sources with conversion efficiency around 3% and with collected EUV power of 190 W or more that can satisfy current requirements for high volume manufacturing. One of the most important characteristics of these devices is in the low amount of atomic debris produced due to the small initial mass of droplets and the significant vaporization rate during the pre-pulse stage. In this study, we analyzed in detail plasma evolution processes in LPP systems using small spherical tin targets to predict the optimum droplet size yielding maximum EUV output. We identified several important processes during laser-plasma interaction that can affect conditions for optimum EUV photons generation and collection. The importance and accurate description of modeling these physical processes increase with the decrease in target size and its simulation domain.

Influence of noble gas ion polishing species on extreme ultraviolet mirrors

Low energy ion polishing is attractive in thin films because of the small interaction zone with the treated material. In this context, various noble gases (Ne, Ar, Kr, and Xe) have been applied for low energy ion polishing of interfaces in nanoscale optical Mo/Si multilayers in order to mitigate the evolving roughness during the deposition process. The interface morphology has been studied by grazing incidence small angle x-ray scattering, the multilayer composition by x-ray photoelectron spectroscopy, and the general performance by extreme ultraviolet (EUV) reflectometry. Both the average roughness level and the vertical correlation length of the roughness can be reduced significantly by increasing the atomic mass of the ion species applied for polishing. Maximum EUV reflectance is observed for Kr+-polishing, while Xe+-polishing shows a superior structure. This apparent contradiction is explained by taking into account the optical absorption from noble gas residuals in the amorphous silicon layers.

Effect of Electron Density on Extreme Ultraviolet Output of a Z-Pinch Xe Discharge Produced Plasma Source

The extreme ultraviolet (EUV) source has many applications, including EUV lithography, EUV diagnostics, and so on. Numerous research groups have developed many EUV light sources and studied their characteristics. In this paper, we measured the temporal EUV emission of a Xe discharge produced plasma (DPP) EUV source and later, attempted to clarify the relationship between electron density evolution and EUV emission. The maximum EUV emission occurred at the optimum electron density of about 1019 cm-3. A preliminarily discussion of the relationship between EUV radiation and electron density evolution based on these experimental results is presented.

The effect of laser wavelength on emission and particle dynamics of Sn plasma

We investigated the effects of laser wavelength on the atomic, ionic, and radiative emission from laser-produced tin plasmas. For generating plasmas, planar tin targets were excited using either high intensity neodymium-doped yttrium aluminum garnet (Nd:YAG, 1.06 μm) or carbon dioxide (CO2, 10.6 μm) laser pulses; both are considered to be potential excitation lasers for an extreme ultraviolet (EUV) lithography laser-produced plasma light source. Various diagnostic tools were utilized for investigating ionic, neutral, and radiative emission from Sn plasmas including Faraday cup, witness plate in conjunction with x-ray photoelectron spectroscopy (XPS), EUV, and visible emission spectroscopy and photography. Atomic and ionic analysis showed that the amount of debris emitted by the Nd:YAG generated plasmas was considerably higher than the CO2 laser-produced plasmas. The angular distributions of both atomic and ionic debris were found to be more forward-centric for the 1.06 μm generated plasma while being much more uniform for the 10.6 μm heated plasma. EUV and visible emission images of the plasma also showed a forward-centric appearance for 1.06 μm heated plasmas. The strength of excited neutral emission was considerably lower for the case of the 10.6 μm plasma while the kinetic energies of ions debris were found to be much higher for CO2 generated plasmas. Surface analysis of the craters created by the lasers showed that the mass ablation rate is 3.6 times higher for Nd:YAG laser generated plasmas compared to CO2 generated plasmas at maximum EUV emission.

Xenon Discharge-Produced Plasma Radiation Source for EUV Lithography

Extreme ultraviolet (EUV) radiation with wavelengths of 11-14 nm is seen as the most promising candidate for a new lithographic technology. Compared with synchrotron radiation sources and laser-produced plasmas, gas discharge-produced plasma sources for EUV radiation are expected to offer lower cost of ownership. Using xenon, a broadband emission in the investigated wavelength range from 10 to 17 nm is observed. Very short current pulses, having a fast rise time of 85- or 140-ns duration and 23-kA amplitude, were applied across the xenon-filled Z-pinch capillary (3-mm diameter and 5-mm length) to produce EUV radiation. An EUV radiation from the Z-pinch plasma was characterized, which is based on the temporal behavior of EUV intensity and the pinhole images. Two maximum EUV radiations occur, which are sensitive to the xenon flow rate and the discharge current. The first radiation is relatively of short duration, while the second radiation lasts as long as the first period of the current flows. The EUV source size due to the first radiation is approximately 300 μm, i.e., half of the one due to the second radiation.

Development of a liquid tin microjet target for an efficient laser-produced plasma extreme ultraviolet source

A regenerative tin liquid microjet target was developed for a high average power extreme ultraviolet (EUV) source. The diameter of the target was smaller than 160 microm and good vacuum lower than 0.5 Pa was maintained during the operation. A maximum EUV conversion efficiency of 1.8% at the Nd:yttrium-aluminum-garnet laser intensity of around 2 x 10(11) Wcm(2) with a spot diameter of 175 microm (full width at half maximum) was observed. The angular distribution of the EUV emission remained almost isotropic, whereas suprathermal ions mainly emerged toward the target normal.

Influence of electrode separation and gas curtain on extreme ultraviolet emission of a gas jet z-pinch source

Extreme ultraviolet (EUV) emission from a gas jet z-pinch source has been examined by employing a photodiode and pinhole camera. Visible images of the pinched plasma have been also recorded. A current pulse of 10kA is used to heat the gas jet, which emits radiation around 13.5nm. Experimental parameters such as electrode separation and gas flow rate are varied to optimize EUV emission. The maximum EUV energy is obtained for 12mm electrode separation and 20Torr xenon pressure and it is estimated to 10.95mJ∕sr per 2% bandwidth per pulse. The presence of gas curtain improves EUV emission by 30%.

Enhancement of extreme ultraviolet emission from a lithium plasma by use of dual laser pulses

We demonstrated enhancement of extreme ultraviolet (EUV) emission at 13.5nm from a lithium plasma by use of dual laser pulses. A single laser pulse produced a lithium plasma condition for the EUV emission far beyond its optimum. Utilization of dual laser pulses, however, enhanced the EUV emission energy, and its maximum in-band EUV conversion efficiency (CE) in a measured solid angle was observed to be 2.4% at a pulse separation time between 20 and 50ns. The EUV CE became 1.8 times as large as that produced by a single laser pulse, which was one of the highest values ever reported. Enhancement of the EUV CE was attributed to the decrease of the plasma temperature and density to their optimum values.

Enhancement of Conversion Efficiency of Extreme Ultraviolet (EUV) Emission from a Laser-Produced Plasma by Use of Water Jet Target

Extreme ultraviolet (EUV) radiation at the wavelength of around 13 nm was observed from a laser-produced plasma using continuous liquid water-jet. The EUV conversion efficiency (CE) was found to depend strongly on the laser focal spot size near the plasma expansion diameter. The maximum EUV CE was observed to be 0.38%/2π sr at 13.0nm in 2% bandwidth.

Role of atomic coherence effects in four-wave mixing using autoionizing resonances

The generation of tunable, nanosecond-pulsed extreme-ultraviolet (EUV) light $(84.92\mathrm{nm}$ to $84.97\mathrm{nm}$ $\ensuremath{\sim}14.6\mathrm{eV})$ using four-wave mixing in optically deep krypton gas was investigated experimentally and theoretically. The sum-frequency mixing scheme generated light from two overlapping autoionizing resonances, ${17s}^{\ensuremath{'}}$ and ${15d}^{\ensuremath{'}}$. We investigated whether the laser-induced atomic coherence effect of electromagnetically induced transparency (EIT) could enhance the intensity of the EUV light generated. The maximum EUV output was seen from the region where the ${15d}^{\ensuremath{'}}$ autoionizing resonance has a transparency window due to Fano-type quantum interference. An analytical model using appropriate atomic parameters explains how background absorption can prevent EIT enhancement of EUV generation; and shows how a background Raman-like coupling term in the nonlinear susceptibility can well describe the measured EUV generation spectrum.

Spatial characterization of extreme ultraviolet plasmas generated by laser excitation of xenon gas targets

At Laser-Laboratorium Göttingen laser-plasma sources were tested, which are going to be used for characterization of optical components and sensoric devices in the wavelength region from 11 to 13 nm. In all cases extreme ultraviolet (EUV) radiation is generated by focusing a Q-switched Nd:YAG laser into a pulsed gas puff target. By the use of xenon or oxygen as target gas, broadband as well as narrowband EUV radiation is obtained, respectively. Different types of valves and nozzles were tested in order to optimize the emitted radiation with respect to maximum EUV intensities, small source diameters, and positional stability. The investigation of these crucial source parameters was performed with specially designed EUV pinhole cameras, utilizing evaluation algorithms developed for standardized laser beam characterization. In addition, a rotatable pinhole camera was developed which allows both spatially and angular resolved monitoring of the soft x-ray emission characteristics. With the help of this camera a strong angular dependence of the EUV intensity was found. The data were compared with fluorescence measurements for visualization of the target gas jet. The experimental observations can be explained by reabsorption of the generated EUV radiation in the surrounding target gas, as supported by semiempirical model calculations based on the attenuation in the three-dimensional gas density according to Lambert–Beer’s law. As a consequence of the presented investigations, an optimization of the EUV source with respect to intensity, plasma shape, and angular dependence is achieved, resulting in a spherical plasma of 200 μm diameter and a 50% increase of the EUV pulse energy.