Materials For Transistors Research Articles

Mechanism of electrical performance deterioration in a-Si:H TFTs caused by source/drain Decap treatment

During the fabrication process of the display industry, the Decap treatment is usually employed as a means to reuse semiconductor materials of thin film transistors (TFTs), but the influence and mechanism of Decap process on the properties of the decapped samples is unknown. To elucidate this occurrence, the electrical characteristics of the channel layer, as well as the microstructure and components at the interface between the Source/Drain (S/D) and the channel layer were examined. It reveals that the infiltration of impurity ion (O and Mo) has significant impact on the deterioration of device performance for a-Si:H TFTs with a Mo/Al/Mo stacked S/D electrode structure. More specifically, oxygen's intrusion leads to the formation of SiOX and the alterations of the surface energy levels and charge distribution of Si, thus introduces an interface trap states between channel layer and S/D electrodes to scatter and capture of interface carriers. And Mo's intrusion may induce the come into being of MoSi or MoP chemical states, causing the decrease of the doping efficiency of phosphorus and the reduction of carrier concentration (from 5.52 × 1016 cm−3 to 4.44 × 1016 cm−3) of a-Si:H channel layer. The combined effect of these two factors results in the decline of electrical performance of S/D decapped a-Si:H TFTs.

Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements.

Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor technology roadmap. Presently, the search for electrically active defects, in terms of both their density of energy states and their spatial distribution, has turned out to be of paramount importance in synthetic transition metal dichalcogenides layers, as they are suspected of severely inhibiting these devices from achieving their highest performance. Although advanced microscopy tools have allowed the direct detection of physical defects such as grain boundaries and point defects, their implementation at the device scale to assess the active defect distribution and their impact on field-induced channel charge modulation and current transport is strictly restrained. Therefore, it becomes critical to directly probe the gate modulation effect on the carrier population at the nanoscale of an FET channel, with the objective to establish a direct correlation with the device characteristics. Here, we have investigated the active channel in a monolayer MoS2 FET through in situ scanning probe microscopy, namely, Kelvin probe force microscopy and scanning capacitance microscopy, to directly identify active defect sites and to improve our understanding of the contribution of grain boundaries, bilayer islands, and defective grain domains to channel conductance.

Hexylation Stabilises Twisted Backbone Configurations in the Prototypical Low-Bandgap Copolymer PCDTBT.

Conjugated donor-acceptor copolymers hold great potential as materials for high-performance organic photovoltaics, organic transistors and organic thermoelectric devices. Their low optical bandgap is achieved by alternation of donor and acceptor moieties along the polymer chain, leading to a pronounced charge-transfer character of electronic excitations. However, the influence of appended side chains and of chemical defects of the backbone on their photophysical and conformational properties remains largely unexplored on the level of individual chains. Here, we employ room temperature single-molecule photoluminescence spectroscopy on four compounds based on the prototypical copolymer PCDTBT with systematically changed chemical structure. Our results show that an increasing density of statistically added hexyl chains to the TBT comonomer distorts the molecular conformation, likely through the increase of average dihedral angles along the backbone. We find that, although the conformation becomes more twisted with high hexyl density, the side chains appear to stabilize the backbone in this twisted conformation. In addition, we demonstrate that homocoupling defects along the backbone barely influence the PL spectra of single chains, and thus intra-chain electronic properties.

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors.

Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on-off ratio. However, engineering the contacts to WSe2 remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal-oxide-semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effect transistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate that PdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2 under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yielding pure p-type operation of the devices.

Ballistic performance and overshoot effects in gallenene nanoribbon field-effect transistors

Gallenene is a novel metallic 2D material that can provide a semiconducting counterpart if patterned into quasi-one-dimensional (quasi-1D) nanostructures, i.e., gallenene nanoribbons (GaNRs). We investigate semiconducting GaNRs as a potential channel material for future ultrascaled field-effect transistors (FETs) by employing quantum transport simulations based on Green's functions and tight-binding Hamiltonians with the orbital resolution calibrated on ab initio calculations. The impact of GaNR width downscaling from ∼6 nm down to ∼0.2 nm on the electronic, transport, and ballistic device properties is investigated for the FET channel length of 15 nm. We report current enhancement and injection velocity overshoot effects for sub-1.2 nm-wide nFETs and pFETs, with a maximum current increase of 53% in the 1.2 nm-wide GaNR pFET in comparison to the widest device. In addition, promising current-driving capabilities of n- and p-channel GaNR FETs are observed with top ballistic currents of more than 2.2 mA/μm and injection velocities of up to 2.4 × 107 cm/s. The reported data are explained by analyzing the evolution of band structure and related parameters such as injection velocity, quantum capacitance, effective transport mass etc., with increasing quantum confinement effects in ultranarrow GaNRs. Generally, we find that quasi-1D gallenene is a promising channel material for future nanoscale FETs, especially for transistor architectures based on stacked nanosheets.

Non-fourier phonon heat transport in graphene nanoribbon field effect transistors based on modified phonon hydrodynamic lattice Boltzmann method

Graphene, with its exceptional thermal conductivity and electron mobility, is widely recognized as a potential candidate for next-generation transistor materials. Despite the lack of pronounced phonon hydrodynamic phenomena at room temperature in graphene materials, momentum-conserving phonon normal scattering predominantly drives phonon hydrodynamic transport. Current methodologies, including the Single Mode Relaxation Time (SMRT) approximation and Fourier's law, inadequately capture phonon transport within the ballistic and hydrodynamic regimes of graphene. In light of these limitations, this study introduces a Non-gray phonon hydrodynamic lattice Boltzmann method in combination with the Temperature Jump Boundary Condition to provide a more accurate depiction of phonon heat transport in graphene nanoribbon field-effect transistors (GNRFETs) spanning these regimes. The findings reveal that our proposed model significantly mitigates heat transfer errors in GNRFETs, primarily driven by ballistic transport compared to the SMRT model. This suggests that the model's applicability extends beyond scenarios dominated by phonon hydrodynamics and is effective even in cases dominated by ballistic transport. In conclusion, our study emphasizes the impact of hydrodynamic transport on heat transfer in GNRFETs and underscores the importance of adjusting parameters related to the heating zone width and specular parameter to enhance thermal stability.

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Amorphous InGaZnO (a-IGZO) has attracted a lot of attention as a high-mobility channel material for thin film transistors (TFTs). However, the instability mechanism involving threshold voltage and subthreshold swing (SS) in a-IGZO TFTs still requires further investigation. In this study, we investigated the electrical instability of amorphous InGaZnO TFTs subjected to alternating positive and negative bias stresses. Based on the respective mechanisms under positive and negative bias stresses, including ionization and spatial movement of oxygen vacancies, bi-directional threshold voltage shifts were observed under alternating bias stress. The SS values vary with the bias stress polarity, reflecting the presence and distribution of oxygen vacancies. Our findings reveal a complementary mechanism based on oxygen vacancies, elucidating the behavior under complex bias stress schemes and extending our understanding of instability mechanisms beyond monotonous bias stress.

Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF6 with SiH4

We demonstrate the reduction of the electron Schottky barrier height (SBH) to 0.48 eV at Mo/n-type Si junctions through the insertion of a semimetal Si-rich Mo silicide (MoSi n , n = 7.9) film. Raman scattering measurements elucidated the persistence of the same amorphous structure within the MoSi n film even when subjected to temperatures as high as 900 °C. This excellent thermal stability yielded a notable result: preservation of the SBH modulation effect even following annealing at 700 °C. Moreover, we investigated the capacitance−voltage characteristics of MOS capacitors, revealing that MoSi n film has a remarkably low effective work function, measuring 4.1 eV when deposited onto SiO2. The deposition of MoSi n film was accomplished with an excellent coverage by using MoF6 and SiH4 gases. Thus, MoSi n film is a promising contact material in advanced CMOS transistors.

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors.

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm2 V-1 s-1 and a memory window up to 1.3 μA. Exposure to a supercontinuum white light source reveals that negative photoconductivity (NPC) and positive photoconductivity (PPC) coexist in the same device. Such behavior is attributed to the chemisorbed O2 molecules, with a minor role of physisorbed H2O molecules. The coexistence of NPC and PPC can be exploited in neuromorphic vision sensors, requiring the human eye retina to process the optical signals through alerting and protection (NPC), adaptation (PPC), followed by imaging and processing. Our results open new avenues for the use of BP and other two-dimentional (2D) semiconducting materials in transistors, memories, and neuromorphic vision sensors for advanced applications in robotics, self-driving cars, etc.

A PEDOT based graft copolymer with enhanced electronic stability.

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) remains the most investigated conjugated polymer in bioelectronics, due to its biocompatibility, high conductivity, and commercial availability. Despite these advantages, it suffers from structural and electronic instability, associated with the PSS component. Here, a graft copolymer based on ionised sulfonic modified PEDOT, poly(EDOTS-g-EDOT), was electrochemically synthesised with demonstrated structural and electronic stability and enhanced electrochemical performance. The graft copolymer was insoluble in water without crosslinking, and exhibited enhanced ion diffusion upon electrochemical switching, as revealed by its volumetric capacitance (159 ± 8 F cm-3), which was significantly higher than that of spin-coated PEDOT:PSS films (41 ± 5 F cm-3). Similarly, its performance as an active channel material in organic electrochemical transistors (OECTs) was superior to the spin-coated PEDOT:PSS, as shown for instance by its high normalised transconductance (273 ± 79 S cm-1) and a significantly high ION/IOFF ratio (19 345 ± 1205). Its short- and long-term electronic stability were also confirmed with no drop in its output drain current, despite its high swelling degree. In contrast, the spin-coated PEDOT:PSS experienced a significant deterioration in its performance over the same operational time. The facile synthesis and improved performance of poly(EDOTS-g-EDOT) highlight the importance of innovative material design in overcoming existing operational shortcomings in electronic devices.

On the grain boundary charge transport in p-type polycrystalline nanoribbon transistors.

Grain boundaries (GB) profoundly influence charge transport, and their localized potential barrier with a high density of defect states plays a crucial role in polycrystalline materials. There are a couple of models to estimate the density of states (DoS) of nanostructured materials in field-effect transistors (FETs) that probe interface traps between the semiconductor and dielectric but not at the grain boundaries. Here, we report on utilizing Levinson's and Seto's models of grain boundary transport and correlate them with the temperature-dependent hopping transport in copper iodide (CuI) polycrystalline nanoribbon (PNR) FETs. Experimentally, PNRs are obtained by e-beam lithography and thermal evaporation of CuI. To investigate the impact of GB, the devices are fabricated with different channel aspect ratios by varying widths (80, 260, and 570 nm) and lengths (20 to 90 μm). Owing to the high hole concentration, PNR FETs operate in depletion mode at 300 K. At various low temperatures (80-300 K), the figures-of-merits of FETs are estimated to understand device performance. We determine GB barrier heights, activation energy, and density of GB trap states and find equivalence between the two models. Furthermore, we calculate temperature-dependent hopping and trap-limited transport parameters to obtain DoS at the Fermi energy, trapped and free charge carrier density, localization length, hopping distance, hopping energy, etc. at various channel lengths. Based on this quantitative analysis, we propose a channel length-dependent GB barrier height variation due to the in-plane electric field and elucidate CuI energy band levels.

Orientation and morphology control in acid-catalyzed covalent organic framework thin films.

As thin films of semiconducting covalent organic frameworks (COFs) are demonstrating utility for ambipolar electronics, channel materials in organic electrochemical transistors (OECTs), and broadband photodetectors, control and modulation of their thin film properties is paramount. In this work, an interfacial growth technique is utilized to synthesize imine TAPB-PDA COF films at both the liquid-liquid interface as well as at the liquid-solid interface on a Si/SiO2 substrate. The concentration of acetic acid catalyst in the aqueous phase is shown to significantly influence the thin film morphology of the liquid-solid growth, with concentrations below 1 M resulting in no film nucleation, concentrations of 1-4 M enabling smooth film formation, and concentrations greater than 4 M resulting in films with a higher density of particulates on the surface. Importantly, while the films grown at the liquid-liquid interface are mixed-orientation, those grown directly at the liquid-solid interface on the Si/SiO2 surface have highly oriented COF layers aligned parallel to the substrate surface. Moreover, this liquid-solid growth process affords TAPB-PDA COF thin films with p-type charge transport having a transconductance of 10 μS at a gate voltage of -0.9 V in an OECT device structure.

Fluorinated polymeric insulating layer surface advancement by fluorine based cross-linking for high-performance organic electronic applications

Insulating polymeric layers, like fluorinated polymers, are excellent dielectric materials for organic field-effect transistors (OFETs).

Low-temperature crosslinked soluble polyimide as a dielectric for organic thin-film transistors: enhanced electrical stability and performance

We have prepared a low-temperature cross-linked soluble polyimide (SPI) as a dielectric material for organic thin-film transistors (OTFTs) to improve their electrical stability. Two types of SPIs (DOCDA/6FHAB and 6FDA/6FHAB) were synthesized by a one-step polymerization process using 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (DOCDA) and hexafluoroisopropylidene diphthalic anhydride (6FDA) as the dianhydrides and 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FHAB) as a diamine. To further enhance the electrical performance, the SPI thin films were crosslinked with methylated/ethylated (hydroxymethyl)benzoguanamine (HMBG) through a low temperature process at 160 °C. Crosslinking considerably improved the insulating properties, resulting in a substantial reduction in leakage current from 10−7 A cm−2 to 10−9 A cm−2 at 2.0 MV cm−1. When crosslinked SPIs were used as gate dielectrics in OTFTs, device stability and reliability, as measured by the off-current, threshold voltage, and hysteresis, improved significantly. Our results demonstrate the potential of crosslinked SPIs as effective gate dielectric materials for advanced organic thin-film transistors.

Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors.

2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.

Theoretical prediction of C- and O-doped Hittorf’s violet phosphorene as bipolar magnetic semiconductor material

Hittorf’s violet phosphorene is a novel two-dimensional material with stable structure and excellent optoelectronic properties. Studying the doping effect helps to understand its physical essence and is of great significance in further developing nanoelectronic devices. In this paper, the first-principles method based on density functional theory is used to study the electromagnetic properties of the non-metallic element B-, C-, N-, and O-doped single-layer violet phosphene. The results show that there is no magnetism after having doped boron and nitrogen, and the system still behaves as a nonmagnetic semiconductor, while carbon doping and oxygen doping cause spin splitting, and the violet phosphorene transforms from a nonmagnetic semiconductor to a bipolar magnetic semiconductor, and its spin density is mainly distributed in the P atom and gap region, rather than on the impurity. The direction of spin polarization of its carrier can be reversed by adjusting the electric field of O-doped violet phosphorene. When a certain size of forward or reverse electrostatic field is applied, the band dispersion becomes stronger, and the O-doped violet phosphorene transforms into a half-metallic magnet with 100% downward or upward spin polarization at the Fermi level. The field effect spin filter based on O-doped violet phosphorene can reverse the direction of spin-polarized current by changing the direction of the gate voltage. This study shows that O-doped violet phosphorene is expected to be an ideal candidate material for two-dimensional spin field-effect transistors, bipolar magnetic spintronic devices, dual channel field effect spin filters, and field-effect spin valves.

Enhanced electron transport and optical properties of experimentally synthesized monolayer Si9C15: a comprehensive DFT study for nanoelectronics and photocatalytic applications.

Two-dimensional silicon-carbide (SixCy) materials stand out for their compatibility with current silicon-based technologies, offering unique advantages in nanoelectronics and photocatalysis. In this study, we employ density functional theory and nonequilibrium Green's function methods to investigate the electronic properties, electron transport characteristics, and optoelectronic qualities of experimentally synthesized monolayer Si9C15. Utilizing the modified deformation potential theory formula, we unveil Si9C15's significant directional anisotropy in electron mobility (706.42 cm2 V-1 s-1) compared to holes (432.84 cm2 V-1 s-1) in the a direction. The electrical transport calculations reveal that configurations with a 3 nm channel length demonstrate an ON state when biased, reaching a peak current of 150 nA. Moreover, this maximum current value escalates to 200 nA under tensile strain, marking an increase of approximately 100 times compared to the 5 nm channel, which remains in an OFF state. Si9C15 exhibits high light absorption coefficients (∼105 cm-1) and suitable band edge positions for water splitting at pH 0-7. Applying 1-5% tensile strain can tune the conduction band minimum and valence band maximum closer to the standard redox potentials, enhancing photocatalytic water splitting efficiency. Remarkably, under illumination at pH 0 and 7, Si9C15 can spontaneously catalyze water splitting, demonstrating its potential as a highly efficient photocatalyst. Our findings emphasize the importance of strain control and device length optimization for performance enhancement in nanoelectronics and renewable energy applications, positioning Si9C15 as a promising material for high-performance field-effect transistors and photocatalytic water splitting.

Optimization of thin-film formation of naphthalene tetracarboxylic diimide derivatives with head and tail structure and application to transistors

Herein, we characterized vacuum-evaporated thin-films of several new naphthalene tetracarboxylic diimide derivatives (C12-NTCDI-R) as n-type organic thin-film transistor (TFT) materials. They have head and tail structure with dodecyl chain and phenylalkyl (benzyl or phenylethyl) groups. By introducing fluorine groups into the phenylalkyl groups, the electron transport properties were enhanced. In addition, modifying the substrate surfaces with a fluorine-rich polymer material and annealing at the appropriate temperature allowed the TFT devices with C12-NTCDI-F2Bn (R = 3,5-difluorobenzyl) to reach a maximum electron mobility (μ e) of 0.11 cm2 V−1 s−1. Furthermore, the alteration of the number of methylene carbons in the side chain of phenylalkyl groups in C12-NTCDI-R (namely, phenylethyl was used as R) affected the thermal behavior of their molecules during the thin-film formation. For the TFT device with C12-NTCDI-PhEt (R = phenylethyl), the μ e reached the maximum value of 0.16 cm2 V−1 s−1 by just surface modification, without annealing.

Enormous electrothermal conductivity disparity in multiphase structure Sr4-xYxCo4O12-δ (x = 0–1.2) polycrystals

SrCoO3-δ system has garnered significant attention as the active material in solid-state thermal transistors. Herein, we have synthesized and characterized hexagonal, cubic, and ordered tetragonal Sr4-xYxCo4O12-δ (x = 0∼1.2) polycrystals with enormous electrothermal conductivity disparity. The hexagonal phase (H, SrCoO3-δ) exhibits quite low electrothermal conductivity (σ∼708.1 S m−1, κ∼0.982 W m−1 K−1) and considerable thermopower (175.4 μV K−1), resulting in lattice thermal conductivity dominates 98 % at 723 K. The one-dimensional chain structure (H) restricts hole carrier transmission, while the CoO6 octahedral unit induces phonon scattering (phonon mean free path in 0.206–0.261 nm). The cubic phase (CP, Sr3·6Y0·4Co4O12-δ) exhibits good electrothermal conductivity (σ∼8 × 104 S m−1 in 400∼650 K, κ∼2.718 W m−1 K−1 at 723 K) and thermopower close to zero, thus the carrier thermal conductivity contributing up to 46 %. The highly symmetrical CP phase with three-dimensional electron-phonon transport channels displays higher mobility (∼1505.7 cm2 V−1 s−1) and carrier concentration (Co4+). The ordered tetragonal phase (OT, Sr3YCo4O12-δ) exhibits an electrothermal performance between the hexagonal and cubic phases, due to oxygen-deficient CoO4.25 tetrahedral layers restricting the electron-phonon transport. The multiphase structure Sr4-xYxCo4O12-δ exhibits a significant contrast in electrothermal transport and holds promise as an active material for electron and phonon logic circuits.

Design of ohmic contacts between Janus MoSSe and two-dimensional metals

Two-dimensional semiconductors are considered as channel materials for field-effect transistors to overcome short-channel effects and reduce the device size. As the contacts to the metallic electrodes are decisive for the device performance, we study the electronic properties of contacts between Janus MoSSe and various two-dimensional metals. We demonstrate that weak interactions at these van der Waals contacts suppress Fermi level pinning and show that ohmic contacts can be formed for both terminations of Janus MoSSe, generating favorable transport characteristics.