Non-fourier phonon heat transport in graphene nanoribbon field effect transistors based on modified phonon hydrodynamic lattice Boltzmann method

Abstract

Graphene, with its exceptional thermal conductivity and electron mobility, is widely recognized as a potential candidate for next-generation transistor materials. Despite the lack of pronounced phonon hydrodynamic phenomena at room temperature in graphene materials, momentum-conserving phonon normal scattering predominantly drives phonon hydrodynamic transport. Current methodologies, including the Single Mode Relaxation Time (SMRT) approximation and Fourier's law, inadequately capture phonon transport within the ballistic and hydrodynamic regimes of graphene. In light of these limitations, this study introduces a Non-gray phonon hydrodynamic lattice Boltzmann method in combination with the Temperature Jump Boundary Condition to provide a more accurate depiction of phonon heat transport in graphene nanoribbon field-effect transistors (GNRFETs) spanning these regimes. The findings reveal that our proposed model significantly mitigates heat transfer errors in GNRFETs, primarily driven by ballistic transport compared to the SMRT model. This suggests that the model's applicability extends beyond scenarios dominated by phonon hydrodynamics and is effective even in cases dominated by ballistic transport. In conclusion, our study emphasizes the impact of hydrodynamic transport on heat transfer in GNRFETs and underscores the importance of adjusting parameters related to the heating zone width and specular parameter to enhance thermal stability.