Material Surrounding Gate MOSFET Research Articles

Performance Analysis of Noise in Dual Halo Dual Dielectric Triple Material Surrounding Gate MOSFET for RF Applications

Performance Analysis of Noise in Dual Halo Dual Dielectric Triple Material Surrounding Gate MOSFET for RF Applications

Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

In this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET (DMSG) by solving the Poisson equation has been proposed and verified using ATLAS TCAD device simulator. Analytical modeling of parameters like threshold voltage, surface potential and Electric field distribution is developed using parabolic approximation method. A comparative study of the SCEs for DMSG and SMSG device structures of same dimensions has been carried out. Result reveals that DMSG MOSFET provides higher efficacy to prevent short-channel effects (SCEs) as compared to a conventional SMSG MOSFET due to the presence of the perceivable step in the surface potential profile which effectively screen the drain potential variation in the source side of the channel. A nice agreement between the results obtained from the model and the results obtained from numerical TCAD device simulator provides the validity and correctness of the developed model.

A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs

A 2D analytical model for transconductance, Sub-threshold current and Sub-threshold swing for Triple Material Surrounding Gate MOSFET (TMSG) is presented in this paper. Based on the solution of two dimensional Poisson equation, the physics based model of sub-threshold current of the device is derived. The model also includes the effect of gate oxide thickness and silicon thickness on the sub-threshold swing characteristics. Transconductance to drain current ratio of the triple material surrounding gate is calculated since it is a better criterion to access the performance of the device. The effectiveness of TMSG design was scrutinized by comparing with other triple material and dual material gate structures. Moreover the effect of technology parameter variations is also studied and proposed. This proposed model offers basic guidance for design of TMSG MOSFETs. The results of the analytical model are compared with the MEDICI simulation results thus providing validity of the proposed model.

Analytical approach of a nanoscale triple-material surrounding gate (TMSG) MOSFETs for reduced short-channel effects

A 2D analytical model for the triple material surrounding gate MOSFET (TMSG) is developed by solving the Poisson equation. In this structure, we use three gate materials of different work functions. The model includes analytical modeling of parameters like surface potential, Electric field distribution and threshold voltage using parabolic approximation method. The short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. The small difference of voltage due to different gate material keeps uniform electric field along the channel, which in turn improves the carrier transport efficiency. Hence the reduction of short channel effects (SCEs) are studied by modeling the device. The results of the analytical model are compared with the MEDICI simulation results and it is well validated.

2D Transconductance to Drain Current Ratio Modeling of Dual Material Surrounding Gate Nanoscale SOl MOSFETs

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

A New Scaling Theory for the Effective Conducting Path Effect of Dual Material Surrounding Gate Nanoscale MOSFETs

In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.