Abstract
A 2D analytical model for the triple material surrounding gate MOSFET (TMSG) is developed by solving the Poisson equation. In this structure, we use three gate materials of different work functions. The model includes analytical modeling of parameters like surface potential, Electric field distribution and threshold voltage using parabolic approximation method. The short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. The small difference of voltage due to different gate material keeps uniform electric field along the channel, which in turn improves the carrier transport efficiency. Hence the reduction of short channel effects (SCEs) are studied by modeling the device. The results of the analytical model are compared with the MEDICI simulation results and it is well validated.
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