Abstract
In this paper, we present a 2D analytical modeling of UTBB SOI MOSFET by introducing a gap in the gate for which this new structure behaves like a dual gate MOSFET and compared the result with TCAD simulation. A 2D Poisson's equation is used for solving surface potential profile, electric field distribution, threshold voltage, DIBL and drain current of UTBB SOI MOSFET structure through parabolic approximation method. A comparative study for increasing negative voltage on control gate of this structure has been carried out. Here we observe surface potential profile, electric field distributions, threshold voltage, DIBL and drain current through applying negative voltage on the right gate of the proposed structure. Result reveals that this structure have higher efficacy to reduce short channel effect (SCE) due to the existence of step change in the surface potential distribution and for increasing negative control gate voltage this structure provides better performance for suppression short channel effect.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
