The assessment of H and H2 densities by mass spectrometry methods in silane–hydrogen (SiH4–H2) plasma-assisted CVD processes requires estimation of the depletion factor for the parent molecules (SiH4 and H2). Such an estimation is non-trivial as H2 is both depleted and generated in SiH4–H2 plasmas, and the usual depletion factor becomes a ‘depletion-generation’ factor. A method for calculating the depletion-generation factor in SiH4–H2 plasmas is presented and applied to de-convolute energy distributions of H and H2 from energy-resolved residual gas analysis (ERRGA) performed using a HIDEN EQP300 mass-energy analyser. The ERRGA method is described and the energy distribution of the H radicals and H2 molecules is obtained for an LEPECVD plasma during the transition from a-Si to nc-Si deposition at constant discharge operation parameters for gas input flow rates of 50 sccm Ar and 10 sccm SiH4, with the addition of H2 (0–50 sccm) at reactor pressures of 1–3 Pa. The H and H2 energy distributions show two main groups, one below 0.7 eV and another at 1.2–1.5 eV, with a strong variation in total density with increase in H2 input. Above 30 sccm H2 input, a step increase in the lower energy component is observed. Energy distributions are discussed in relation to H and H2 generation reactions and gas heating in PECVD processes.