Ion energy distributions at rf-biased wafer surfaces

Abstract

We report the measurement of ion energy distributions at a radio frequency (rf)-biased electrode in inductively driven discharges in argon. We compare measurements made with a gridded energy analyzer and a commercial analyzer that contains a mass spectrometer and energy analyzer in tandem. The inductive drive and the rf bias in our Gaseous Electronics Conference reference cell were both at 13.56 MHz. By varying the plasma density, we were able to examine the transition region between the “low frequency limit” for rf bias and the intermediate frequency region where, at fixed bias frequency, the ion energy distribution width varies with the plasma density. We find that the experimental ion energy distributions become narrower as the time for ion transit through the sheath approaches the rf period, but that the ion distributions still have widths which are ∼90% of their low frequency limit when the ion transit time is 40% of the rf period. Space-charge-induced beam broadening inside our analyzers appears to significantly affect our measurements of ion angular distributions, especially at low ion energies.