MA Structure Research Articles

A Time-Varying Hierarchical Load Frequency Control Method for Multi-area Power System with Wind Power Participation and HVDC Tie-Line based on MAS Structure

A Time-Varying Hierarchical Load Frequency Control Method for Multi-area Power System with Wind Power Participation and HVDC Tie-Line based on MAS Structure

Multi-Courses of General Exam System Based on MAS

The design of a multiple courses of general exam system development method based on MAS technology. This paper discussed the necessity of development system, the concept of MAS and the organizational structure of MAS, secondly analyzes the system framework, finally introduces the key technologies such as the multi-agent RPC communication model, online exam process etc..

3C 395 - A quasar with asymmetrical radio structure

view Abstract Citations (9) References (12) Co-Reads Similar Papers Volume Content Graphics Metrics Export Citation NASA/ADS 3C 395 - A quasar with asymmetrical radio structure. Johnston, K. J. ; Spencer, J. H. ; Witzel, A. ; Fomalont, E. B. Abstract The milli-arcsec (mas) structure of the radio radiation at 5 GHz associated with 3C 395 has been resolved into two components of almost equal intensity of 0.8 Jy along a position angle of + 118 deg with a separation of 15.9 mas. The symmetry in the mas structure appears to be reversed from that in the large approximately 1 arcsec structure because the component which has a resolved steep spectral index is located on the opposite side of the compact flat spectral index structure. The quasar 0836+714 was also mapped and consists of a dominant compact source with extended structure 3 mas away along P.A. -142 deg. The intensity ratio of the components is 3:1. Publication: The Astrophysical Journal Pub Date: February 1983 DOI: 10.1086/183955 Bibcode: 1983ApJ...265L..43J Keywords: Extragalactic Radio Sources; Quasars; Radio Astronomy; Astronomical Maps; Very Long Base Interferometry; Astronomy full text sources ADS | data products SIMBAD (4) NED (1)

Effects of the Al2O3 Film on the Electrical Characteristics of the Planar p-n Junctions

The gate voltage dependence of the junction breakdown voltage is studied by gate controlled junction diodes with MAS and MAOS structures, and is compared with MOS structure, including thermally grown SiO2 film. The low level junction reverse current-gate voltage characteristics have shown a new component which increases with decreasing gate voltage for a fixed junction voltage. The new component in the junction reverse current shows negative temperature dependence and is assumed to be caused by tunneling of carriers through an extremely narrow depletion layer of p-n junction near the surface. This phenomenon is probably related to the fact that the rate at which the junction breakdown voltage “walks out”, is smaller in MAS structure than in MOS structure for a fixed junction reverse current.