Abstract
The gate voltage dependence of the junction breakdown voltage is studied by gate controlled junction diodes with MAS and MAOS structures, and is compared with MOS structure, including thermally grown SiO2 film. The low level junction reverse current-gate voltage characteristics have shown a new component which increases with decreasing gate voltage for a fixed junction voltage. The new component in the junction reverse current shows negative temperature dependence and is assumed to be caused by tunneling of carriers through an extremely narrow depletion layer of p-n junction near the surface. This phenomenon is probably related to the fact that the rate at which the junction breakdown voltage “walks out”, is smaller in MAS structure than in MOS structure for a fixed junction reverse current.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
