Manipulation Of Electron Spins Research Articles

Dual Signature of Chirality Induced Spin Selectivity through Spontaneous Resolution of 2D Metal–Organic Frameworks

AbstractThe Chiral‐Induced Spin Selectivity (CISS) effect has emerged as a fascinating phenomenon within the realm of electron's spin manipulation, showcasing a unique interplay between electron's spin and molecular chirality. Subsequent to its discovery, researchers have been actively involved in exploring the new chiral molecules as effective spin filters. In the realm of observing the CISS effect, the conventional approach has mandated the utilization of two distinct enantiomers of chiral molecules. However, this present study represents a significant advancement by demonstrating the ability to control both spin states of electrons in a single system. In this work, we have demonstrated the preparation of chiral metal–organic frameworks (MOFs) via a “spontaneous resolution” process, obviating the requirement for chiral sources. This resulted in the production of chiral crystals exhibiting opposite handedness (1P and 1M) and these crystals were subsequently employed as a new class of spin filters based on CISS effect. Remarkably, this work signifies the first instance of achieving dual signature of spin selectivity from a single and exclusively achiral system through a spontaneous resolution process. This holds immense potential as it facilitates the production of two distinct spin‐filtering materials from a unified system. Furthermore, we investigated the contact potential differences (CPD) of these chiral crystals and, for the first time, associated it with the preferential spin transport properties. Our findings revealed a correlation between the CPD and the chirality of the crystals, as well as the magnetization orientations of the ferromagnetic substrate, which can be elucidated by the CISS effect. In overall, the significant findings achieved using these robust and easily synthesized MOF crystals without the requirement for chiral medium represent a crucial advancement in enhancing the effectiveness of spin filtering materials to produce spintronic devices.

First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

Abstract This paper investigates the impact of electrode materials on the Tunnel Magneto-Resistance (TMR) ratio of Magnetic Tunnel Junction (MTJ) device. Four different structures of MTJ have been simulated by using cobalt (Co), Nickel (Ni), Iron (Fe) and two alloy materials of nickel-iron (NiFe) and cobalt-iron (CoFe). These materials have been used as ferromagnetic electrodes. Mulliken population and transmission spectrum observed in both parallel and antiparallel configurations of these devices to understand the spin transport properties and Tunnel Magneto-Resistance (TMR) ratio has been estimated. The first principal study was performed based on density function theory (DFT) and Non-equilibrium Green’s Function (NEGF) computational methods using the QuantumATK simulation tool to study properties such as band structure, the density of states (DOS), Spin Transfer Torque (STT), I-V characteristics and TMR. This study explores how different electrode materials affect the Tunnel Magneto-Resistance (TMR) ratio in Magnetic Tunnel Junction (MTJ) devices. With these results, it is observed that cobalt-based MTJ devices (that is Co-MgO-Fe and CoFe-MgO-CoFe) exhibit higher TMR ratio as compared to Nickel- and Iron-based MTJ devices (that is NiFe-MgO-NiFe and Ni-MgO-Fe). As Cobalt has a high spin polarization this property makes it suitable for use in spintronics devices like MTJs, where the manipulation of electron spins is essential for data storage and information processing. These findings can be employed to improve the performance characteristics of the MTJ-based Random Access Memory (MRAM) in the field of spintronics.

Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

Coherent manipulation of electron spins is one of the central challenges of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow 10–60 GHz radio frequency (RF) pulses to induce an electromagnetic field that drives Rabi oscillations in a quantum dot interface. The frequency of these Rabi oscillations is directly proportional to the strength of the induced electromagnetic field. We outline a methodology for the design of a printed circuit board and an ESR line that is able to transmit an RF pulse in the 40 GHz regime and induce an oscillating magnetic field onto a qubit device. We propose and implement a novel design by coupling a second symmetrical Oersted line in the opposing direction of the first to act as an antenna for the purpose of monitoring power and magnetic field strength at the embedded device interface.

Dual Signature of Chirality Induced Spin Selectivity through Spontaneous Resolution of 2D Metal-Organic Frameworks.

The Chiral-Induced Spin Selectivity (CISS) effect has emerged as a fascinating phenomenon within the realm of electron's spin manipulation, showcasing a unique interplay between electron's spin and molecular chirality. Subsequent to its discovery, researchers have been actively involved in exploring the new chiral molecules as effective spin filters. In the realm of observing the CISS effect, the conventional approach has mandated the utilization of two distinct enantiomers of chiral molecules. However, this present study represents a significant advancement by demonstrating the ability to control both spin states of electrons in a single system. In this work, we have demonstrated the preparation of chiral metal-organic frameworks (MOFs) via a "spontaneous resolution" process, obviating the requirement for chiral sources. Remarkably, this work signifies the first instance of achieving dual signature of spin selectivity from a single and exclusively achiral system through a spontaneous resolution process. This holds immense potential as it facilitates the production of two distinct spin-filtering materials from a unified system. In overall, the significant findings achieved using these robust and easily synthesized MOF crystals without the requirement for chiral medium represent a crucial advancement in enhancing the effectiveness of spin filtering materials to produce spintronic devices.

Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide.

Spin-active optical emitters in silicon carbide are excellent candidates toward the development of scalable quantum technologies. However, efficient photon collection is challenged by undirected emission patterns from optical dipoles, as well as low total internal reflection angles due to the high refractive index of silicon carbide. Based on recent advances with emitters in silicon carbide waveguides, we now demonstrate a comprehensive study of nanophotonic waveguide-to-fiber interfaces in silicon carbide. We find that across a large range of fabrication parameters, our experimental collection efficiencies remain above 90%. Further, by integrating silicon vacancy color centers into these waveguides, we demonstrate an overall photon count rate of 181 kilo-counts per second, which is an order of magnitude higher compared to standard setups. We also quantify the shift of the ground state spin states due to strain fields, which can be introduced by waveguide fabrication techniques. Finally, we show coherent electron spin manipulation with waveguide-integrated emitters with state-of-the-art coherence times of T 2 ∼ 42 μs. The robustness of our methods is very promising for quantum networks based on multiple orchestrated emitters.

Engineering Electron Spin in van der Waals Heterostructures

Two-dimensional materials revolutionize spintronics, enabling unprecedented manipulation of electron spin for next-generation information technologies. Particularly exciting is the possibility of spin engineering van der Waals heterostructures, expected to lead to breakthroughs in many realms of quantum physics. This feature article explores tailoring spin interactions in van der Waals heterostructures via stacking and twisting.

Real-space determination of the isolated magnetic skyrmion deformation under electric current flow

The manipulation and control of electron spins, the fundamental building blocks of magnetic domains and spin textures, are at the core of spintronics. Of particular interest is the effect of the electric current on topological magnetic skyrmions, such as the current-induced deformation of isolated skyrmions. The deformation has consequences ranging from perturbed dynamics to modified packing configurations. In this study, we measured the current-driven real-space deformation of isolated, pinned skyrmions within Co10Zn10 at room temperature. We observed that the skyrmions are surprisingly soft, readily deforming during electric current application into an elliptical shape with a well-defined deformation axis (semimajor axis). We found that this axis rotates unidirectionally toward the current direction irrespective of electric current polarity and that the elliptical deformation reverses back upon current termination. We quantified the average distortion δ, which increased by ∼90% during the largest applied current density |j| = 8.46 ×109 A/m2 when compared with the skyrmion's intrinsic shape ([Formula: see text]). Additionally, we demonstrated an approximately 120% average skyrmion core size expansion during current application, highlighting the skyrmions' inherent topological protection. This evaluation of in situ electric current-induced skyrmion deformation paints a clearer picture of spin-polarized electron-skyrmion interactions and may prove essential in designing spintronic devices.

Optically addressable universal holonomic quantum gates on diamond spins

The ability to individually control the numerous spins in a solid-state crystal is a promising technology for the development of large-scale quantum processors and memories. A localized laser field offers spatial selectivity for electron spin manipulation through spin–obit coupling, but it has been difficult to simultaneously achieve precise and universal manipulation. Here, we demonstrate microwave-driven holonomic quantum gates on an optically selected electron spin in a nitrogen-vacancy centre in diamond. The electron spin is precisely manipulated with global microwaves tuned to the frequency shift induced by the local optical Stark effect. We show the universality of the operations, including state initialization, preparation, readout and echo. We also generate optically addressable entanglement between the electron and adjacent nitrogen nuclear spin. High-fidelity operations are achieved by applying amplitude-alternating pulses, which are tolerant to fluctuations in microwave intensity and detuning. These techniques enable site-selective quantum teleportation transfer from a photon to a nuclear spin memory, paving the way for the realization of distributed quantum computers and the quantum Internet with large-scale quantum storage.

Robust ferroelectric-gating-dependent electronic and magnetic properties in a 1T-VSe2/BiAlO3(0001) multiferroic heterostructure

The modulation of magnetism and related electronic properties is highly desirable for advanced nanoscale electronic and spintronic applications, but volatility in electron spin manipulation is a major challenge that requires urgent attention. Here, we use density functional theory (DFT) calculations to show that the electronic and magnetic properties of a ferromagnetic [half-]metallic 1T-VSe2 monolayer can be effectively modulated via ferroelectric BiAlO3(0001) gating. In particular, the carry type in the 1T-VSe2 overlayer can be switched from being n-type to p-type or n+ -type through the reversal of the ferroelectric polarization. The magnetocrystalline anisotropy of the 1T-VSe2 monolayer can also be changed from easy-plane to easy-axis. In addition, the band offset, magnetic moments, exchange interaction, and Curie temperature (Tc) of the 1T-VSe2 overlayer show significant dependence on the electric polarization direction, with the calculated surface magnetoelectric coupling coefficients (αS) reaching 10−10 G cm [2]/V. This demonstration of robust ferroelectric-gating-dependent magnetism and related electronic properties holds great promise for the innovative design and implementation of next-generation nanoscale non-volatile ultra-low power devices.

Local breaking of the spin degeneracy in the vortex states of Ising superconductors: Induced antiphase ferromagnetic order

Ising spin-orbital coupling is usually easy to identify in the Ising superconductors via an in-plane critical field enhancement, but we show that the Ising spin-orbital coupling also manifests in the vortex physics for perpendicular magnetic fields. By self-consistently solving the Bogoliubov--de Gennes equations of a model Hamiltonian built on the honeycomb lattice with the Ising spin-orbital coupling pertinent to the transition metal dichalcogenides, we numerically investigate the local breaking of the spin and sublattice degeneracies in the presence of a perpendicular magnetic field. It is revealed that the ferromagnetic orders are induced inside the vortex core region by the Ising spin-orbital coupling. The induced magnetic orders are antiphase in terms of their opposite polarizations inside the two nearest-neighbor vortices with one of the two polarizations coming predominantly from one sublattice site, implying the local breaking of the spin and sublattice degeneracies. The finite-energy peaks of the local density of states for spin-up and spin-down in-gap states are split and shifted oppositely by the Ising spin-orbital coupling, and the relative shifts of them on sublattices $A$ and $B$ are also of opposite algebraic sign. The calculated results and the proposed scenario may not only serve as experimental signatures for identifying the Ising spin-orbital coupling in the Ising superconductors, but also be prospective in the manipulation of electron spins in motion through the orbital effect in the superconducting vortex states.

Electron-spin-resonance meanderlines for effective spin control in Si quantum dots for large-scale qubit applications

Coherent control of electron spins in multiple quantum dots (QDs) is critical for realizing large-scale spin qubits. The manipulation of electron spins in Si QDs can be achieved by electron spin resonance (ESR). While the effective spin control over a single qubit has been demonstrated, the architecture of ESR lines for large-scale spin qubits has yet to be demonstrated. In this paper, we propose an ESR meanderline for large-scale Si QDs. Simulation results show that magnetic fields can be effectively enhanced with low electric fields using a meanderline, enabling high-fidelity and low-noise control over electron spins in a 50-qubit system. Reflection coefficients of ESR meanderlines by on-wafer microwave measurements show low loss (−7 dB) for a 3-qubit device at a frequency range of 10 to 50 GHz.

Low dephasing and robust micromagnet designs for silicon spin qubits

Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99.9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes qubit dephasing, while allowing for fast qubit control and addressability. Specifically, we design and optimize magnet dimensions and positions relative to the quantum dots, minimizing dephasing from magnetic field gradients. The micromagnet-induced dephasing rates with this design are up to three orders of magnitude lower than state-of-the-art implementations, allowing for long coherence times. This design is robust against fabrication errors and can be combined with a wide variety of silicon qubit device geometries, thereby allowing exploration of coherence limiting factors and novel upscaling approaches.

Room Temperature Ferromagnetism: Nonmagnetic Semiconductor Oxides and Nonmagnetic Dopants

Advances in room temperature ferromagnetic semiconductors increase the opportunity to commercialize full spintronic devices. The manipulation of electron spin in semiconductor materials has driven significant research activity with the goal of realizing their amazing technological potential. Coupling of magnetic and semiconducting properties could lead to a new generation of information and communication devices. During the past 20 years, the intensive research on magnetic semiconductor materials has led to discovery of two interesting facts. Room temperature ferromagnetism is observed in undoped semiconductor oxides with empty or completely filled d- or f-orbitals, and nonmagnetic dopants can induce or enhance the room temperature ferromagnetism in nonmagnetic semiconductor materials. The organized review which addresses this phenomenon and covers the large number of studies on this subject is rare. In this study, we firstly review the advantages aspects of spintronic devices as well as the materials suitable for these applications. Here, we tried to provide a systematic study on defects induced by room temperature ferromagnetism in undoped semiconductor oxides as well as the impact of nonmagnetic dopants on ferromagnetism. We hope this review assist researchers in creating a complete picture to develop future research activities to access innovative technological applications.

Resonant excitation of nanowire quantum dots

GaAs quantum dots in nanowires are one of the most promising candidates for scalable quantum photonics. They have excellent optical properties, can be frequency-tuned to atomic transitions, and offer a robust platform for fabrication of multi-qubit devices that promise to unlock the full technological potential of quantum dots. Coherent resonant excitation is necessary for virtually any practical application because it allows, for instance, for on-demand generation of single and entangled photons, photonic clusters states, and electron spin manipulation. However, emission from nanowire structures under this excitation scheme has never been demonstrated. Here we show, for the first time, biexciton–exciton cascaded emission via resonant two-photon excitation and resonance fluorescence from an epitaxially grown GaAs quantum dot in an AlGaAs nanowire. We also report that resonant excitation schemes, combined with above-bandgap excitation, can be used to clean and enhance the emission of nanowire quantum dots.

Piezotronic effect on Rashba spin–orbit coupling based on MAPbI3/ZnO heterostructures

Rashba spin–orbit coupling (SOC) is a core issue in semiconductor spintronics, which allows the manipulation of electron spin through an electric field rather than an external magnetic field, revealing a bright prospect for advanced electronic devices with ultra-high speed and integration. Conversely, the emerging piezotronic effect is the born characteristic for many semiconductors that have a non-central symmetric structure, such as ZnO and GaN. Here, we design three heterostructure devices, based on piezoelectric p-type (CH3NH3)PbI3 single crystals and n-type wurtzite-structured ZnO thin films, to theoretically study how the piezotronic effect can effectively work on the Rashba spin–orbit coupling. Benefiting from large piezoelectric charges at the interface when a vertical strain is applied, a high concentration of two-dimensional electron gas is induced in the plane of the heterostructure, which can tune the built-in electric field at the interface and further manipulate the Rashba SOC. With the increase in pressure, both the Rashba parameter and spin splitting are found to first vanish and then increase linearly for ZnO with doping densities of 1015 and 1016 cm−3. This work provides insight for manipulating electron spins via the introduction of piezocharges, showing great application potential of the piezotronic effect in tuning spintronic devices.

Tuning Magnetism of Metal Porphyrazine Molecules by a Ferroelectric In2Se3 Monolayer.

Electric field tuning of magnetism is highly desirable for nanoelectronics, but volatility in electron spin manipulation presents a major challenge that needs urgent resolution. Here, we show by first-principles calculations that magnetism of metal porphyrazine (MPz) molecules can be effectively tuned by switching ferroelectric polarization of an adjacent In2Se3 monolayer. The magnetic moments of TiPz and VPz (MnPz, FePz, and CoPz) decrease (increase) at one polarization but remain unchanged at reversed polarization. This intriguing phenomenon stems from distinct metal d-orbital occupation caused by electron transfer and energy-level shift associated with the polarization switch of the In2Se3 monolayer. Moreover, the ferroelectric switch also tunes the underlying electronic properties, producing a metallic, half-metallic, or semiconducting state depending on polarization. These findings of robust ferroelectric tuning of magnetism and related electronic properties in MPz-adsorbed In2Se3 hold great promise for innovative design and implementation in advanced magnetic memory storage, sensor, and spintronic devices.

Quadrupolar effect on nuclear spin depolarization in single self-assembled quantum dots

We investigate the nuclear spin polarization in single self-assembled InAlAs quantum dots under magnetic fields that are sufficiently weak to make the impacts of the quadrupole interaction apparent. The nuclear spin depolarization rate decreases as the magnitude of the applied longitudinal magnetic field increases. This trend can be explained by the dissolution of quadrupolar mixing that is coupled to the temporal fluctuations of the hyperfine interaction. In addition, the optically injected electron spin generates a considerable Overhauser field under a wide range of experimental conditions. These findings are important for nuclear spin engineering and electron spin manipulation in self-assembled III–V semiconductor quantum dots.

Optical control of room-temperature valley polaritons

Valley-polarized light–matter quasiparticles in two-dimensional semiconductor microcavities are demonstrated. Access to spin–valley physics may be useful for photonic quantum technologies. The formation of half-light half-matter quasiparticles under strong coupling results in properties unique from those of the constituent components. Fingerprints of both light and matter are imprinted on the new quasiparticles, called polaritons. In the context of two-dimensional (2D) materials, this opens up the possibility of exploiting the intriguing spin–valley physics of a bare semiconductor combined with the light mass of the photonic component for possible quantum technologies. Specifically, the valley degree of freedom1,2, which remained largely unexplored until the advent of these materials, is highly attractive in this context as it provides an optically accessible route for the control and manipulation of electron spin. Here, we report the observation of room-temperature strongly coupled light–matter quasiparticles that are valley polarized because of the coupling of photons with specific helicity to excitons that occupy quantum mechanically distinct valleys in momentum space. The realization of valley polaritons in 2D semiconductor microcavities presents the first step towards engineering valley-polaritonic devices.

Quantum engineering of matter from the laboratory to the market: an interview with Dieter Bimberg and Kang Wang

Abstract Quantum dots introduce a new form of quantum engineering of materials properties based purely on size and dimensionality. Whereas we traditionally think of materials as having intrinsic properties such as strength, electrical conductivity and light absorption or emission spectra due to their composition and atomic-scale structure, when their size is very small, such properties can be altered by quantum-mechanical effects, for example due to confinement of the quantum wavefunctions that determine the energies of charge carriers like electrons. As it became possible in the 1990s to control the size of material structures with a precision of less than a nanometre in all three dimensions of space, quantum effects began to be exploited for technological applications. Quantum dots are particles with a nanoscale extent in three dimensions—in effect, tiny fragments of material, often made of one type of semiconductor embedded in another. Quantum dots in which the wavelength of absorption and fluorescent emission of light is tuned by the nanoparticle size are being explored for uses ranging from colour displays to biomedical imaging. Films of semiconducting materials thin enough to exhibit one-dimensional quantum-confinement effects, meanwhile, are routinely used to make efficient optical devices such as lasers. Such applications have depended on the availability of techniques for precise control of particle size, composition and thickness. NSR spoke to two leading researchers in this field of quantum engineering about its development and prospects. Dieter Bimberg is founding director of the Center of Nanophotonics at the Technical University of Berlin in Germany. He pioneered the use of quantum dots in photonic devices such as lasers and optical amplifiers, as well as developing non-volatile ‘dynamic’ random-access memories (DRAMs), which retain their information when the power is switched off. Kang Wang is a professor of electrical engineering at the University of California at Los Angeles, whose work on nanoscale quantum devices has focused on electronic and magnetic properties, and in particular on the development of non-volative RAMs and the manipulation and control of electron spin as a new parameter for information processing (a technology called spintronics).

Multi-Frequency Pulsed Overhauser DNP at 1.2 Tesla

Abstract Dynamic nuclear polarization (DNP) is a methodology to increase the sensitivity of nuclear magnetic resonance (NMR) spectroscopy. It relies on the transfer of the electron spin polarization from a radical to coupled nuclear spins, driven by microwave excitation resonant with the electron spin transitions. In this work we explore the potential of pulsed multi-frequency microwave excitation in liquids. Here, the relevant DNP mechanism is the Overhauser effect. The experiments were performed with TEMPOL radicals in aqueous solution at room temperature using a Q-band frequency (1.2 T) electron paramagnetic resonance (EPR) spectrometer combined with a Minispec NMR spectrometer. A fast arbitrary waveform generator (AWG) enabled the generation of multi-frequency pulses used to either sequentially or simultaneously excite all three 14N-hyperfine lines of the nitroxide radical. The multi-frequency excitation resulted in a doubling of the observed DNP enhancements compared to single-frequency microwave excitation. Q-band free induction decay (FID) signals of TEMPOL were measured as a function of the excitation pulse length allowing the efficiency of the electron spin manipulation by the microwave pulses to be extracted. Based on this knowledge we could quantitatively model our pulsed DNP enhancements at 1.2 T by numerical solution of the Bloch equations, including electron spin relaxation and experimental parameters. Our results are in good agreement with theoretical predictions. Whereas for a narrow and homogeneous single EPR line continuous wave excitation leads to more efficient DNP enhancements compared to pulsed excitation for the same amount of averaged microwave power. The situation is different for radicals with several hyperfine lines or in the presence of inhomogeneous line broadening. In such cases pulsed single/multi-frequency excitation can lead to larger DNP enhancements.