Abstract
GaAs quantum dots in nanowires are one of the most promising candidates for scalable quantum photonics. They have excellent optical properties, can be frequency-tuned to atomic transitions, and offer a robust platform for fabrication of multi-qubit devices that promise to unlock the full technological potential of quantum dots. Coherent resonant excitation is necessary for virtually any practical application because it allows, for instance, for on-demand generation of single and entangled photons, photonic clusters states, and electron spin manipulation. However, emission from nanowire structures under this excitation scheme has never been demonstrated. Here we show, for the first time, biexciton–exciton cascaded emission via resonant two-photon excitation and resonance fluorescence from an epitaxially grown GaAs quantum dot in an AlGaAs nanowire. We also report that resonant excitation schemes, combined with above-bandgap excitation, can be used to clean and enhance the emission of nanowire quantum dots.
Highlights
GaAs1,2 and InGaAs3 quantum dots (QDs) are excellent single photons sources in terms of purity and near-unity indistinguishability
Resonant excitation of semiconductor QDs10–13 allows for ondemand operation, by triggering the emission with precisely timed pumping pulses
In our previous work[18], we have shown that GaAs QDs can be embedded in AlGaAs nanowires during bottom-up growth in a molecular beam epitaxy reactor, adding new possibilities to the system
Summary
GaAs1,2 and InGaAs3 quantum dots (QDs) are excellent single photons sources in terms of purity and near-unity indistinguishability. GaAs QDs, in particular, have shown the highest degree of photon polarization entanglement[4]. These QDs emit around 780 nm, near the D2 lines of 87Rb, a stable and reliable reference frequency to which each emitter can be tuned[5,6] and frequencylocked for quantum network operation[7]. Two-photon excitation (TPE) of the biexciton has been shown to be necessary to obtain a clean biexciton emission and a high degree of indistinguishability and entanglement from cascaded emission of GaAs QDs4
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