Position Of Main Peak Research Articles

A STUDY ON REACTION KINETICS OF THE RADICALS PRODUCED IN THE LASER-INDUCED SILANE PLASMA

The reaction kinetic processes of species produced in a pulsed TEA CO2 laser induced si-lane plasma were studied with the time-resolved OES. It is showed that the time position of main peaks for different fragments' charactristic lines are appreciably different. The reaction kinetic processes are discussed based on the results. By comparing the time evolution of the lines of the fragments and considering the other results of OES, We infer that the final reaction channel of the laser-induced silane plasma is a Si producing channel.

Effect of interface structure on the X-ray double crystal rocking curve peak position from very thin layers in the highly asymmetric Bragg geometry

Double crystal rocking curves from a thin epitaxial layer of GalnAsP on InP have been studied in the highly asymmetric, glancing incidence, Bragg geometry. While a simulation based on a single layer fits the data quite well, a slightly better fit to the data is obtained by assuming the presence of a thin, highly mismatched, interface layer. The interface layer, however, significantly affects the main layer peak position. Very similar rocking curves are found for substantially different structures. We examine the implications for the determination of main layer composition from mismatch measurement.

Neutron diffraction determination of the partial structure factors of molten CuCl

Abstract A new neutron scattering determination of the partial structure factors of liquid CuCl is given, which emphasizes the necessity of an internal consistency check of the various coherent and absorption scattering cross-sections of the isotopically substituted samples. The amplitudes of the S ++ and S −- partials are about 30% more intense than in previous work, and their first peaks are in phase; however these two partials remain remarkably asymmetric. The ratio of the main peak positions of the S NN and S NN partials (Bhatia and Thorton) gives k q/k N = 0·58 which is very different from the alkali halide series. No shoulder is detected on the high-K side of the k N peak. An estimate of the radius ratio gives a value of 0·36 which is high. The number of nearest neighbours is small, 3±0·7, in agreement with Abramo's predictions. The analysis of the small-angle data confirms the size effect and the small partial molar volume of the positive ion, it also requires a value of the high-frequency dielectric constant higher than in the solid state. Interpretations of the structure require some weak ionic trends as well ∊s a local order consistent with the small size of the copper ion and the small number of nearest neighbours.

Theory of the Electron Paramagnetic Resonance of Oxygen Impurity in Solid Nitrogen

The effective zero-field splitting parameters, \(\tilde{D}_{lm}\), of the O 2 molecule in the states of librational motion, \(\varPsi_{lm}\), are calculated on the assumption that the molecule is subjected to a hindering potential C P 2 (cos θ). According to experiments on specific heats, C =-306.6 K, \(\tilde{D}_{1,0}{=}107\) GHz and \(\tilde{D}_{1,1}{=}95.0\) GHz. The temperature dependence of the polycrystalline absorption line shape is investigated on the basis of the isotropic g -factor. The main-peak position is 11.56 kG at X band, and 19.33 kG at K band. Small peaks owing to the O 2 molecules in \(\varPsi_{1,1}\) appear if T > 11 K: the positions at X- and K-bands are 11.0 kG and 18.4 kG, respectively. Calculated results account for paramagnetic resonance experiments.

Some Properties of Silicon Nitride Films Produced by Radio Frequency Glow Discharge Reaction of Silane and Nitrogen

Silicon nitride films are deposited on silicon wafer at low temperature by radio frequency glow discharge reaction of silane and nitrogen. The main peak position of infrared transmission spectra, the growth rate and the etch rate of the nitride films change respectively from 870 to 820 cm-1, from 0.8 to 6.5Å/sec and from 150 to 5Å/sec in 15% HF etchant with changing silane concentration from 0.1 to 2.5 mol %. The etch rate is larger than that of the thermally grown silicon nitride. The dielectric constant of nitride films changes from 8 to 5 with changing substrate temperature from 500 to 25°C. The nitride film deposited at as high temperature as 500°C shows a large hysteresis of C–V curve. The silicon nitride film deposited at the substrate temperature of 300°C and at the silane concentration of 0.5 mol % is stable against B–T treatment as well as thermally grown silicon nitride films. The value of flat-band surface charge ranges from 7 to 14×10''/cm2, the value is relatively small in comparison with that of thermally grown nitride.