Abstract
Silicon nitride films are deposited on silicon wafer at low temperature by radio frequency glow discharge reaction of silane and nitrogen. The main peak position of infrared transmission spectra, the growth rate and the etch rate of the nitride films change respectively from 870 to 820 cm-1, from 0.8 to 6.5Å/sec and from 150 to 5Å/sec in 15% HF etchant with changing silane concentration from 0.1 to 2.5 mol %. The etch rate is larger than that of the thermally grown silicon nitride. The dielectric constant of nitride films changes from 8 to 5 with changing substrate temperature from 500 to 25°C. The nitride film deposited at as high temperature as 500°C shows a large hysteresis of C–V curve. The silicon nitride film deposited at the substrate temperature of 300°C and at the silane concentration of 0.5 mol % is stable against B–T treatment as well as thermally grown silicon nitride films. The value of flat-band surface charge ranges from 7 to 14×10''/cm2, the value is relatively small in comparison with that of thermally grown nitride.
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