Magnetoresistance Measurements Research Articles

Vortex matching at 6 T in YBa2Cu3O7−δ thin films by imprinting a 20-nm periodic pinning array with a focused helium-ion beam

Controlled engineering of vortex pinning sites in copper-oxide superconductors is a critical issue in manufacturing devices based on magnetic flux quanta. To address this, we employed a focused He-ion beam (He-FIB) to irradiate thin YBa2Cu3O7−δ films and create ultradense hexagonal arrays of defects with lattice spacings as small as 20 nm. Critical current and magnetoresistance measurements demonstrate efficient pinning by a matching field of 6 T visible in a huge temperature range from the critical temperature Tc down to 2 K. These results show that He-FIB irradiation provides excellent opportunities for the development and application of superconducting fluxonic devices based on Abrikosov vortices. In particular, our findings suggest that such devices can operate at temperatures far below Tc, where superconductivity is robust. Published by the American Physical Society 2024

Crystal structure, magnetic and electrical transport properties of titanium-doped half-Heusler alloys Ni1−xTixMnSb

Ni[Formula: see text]TixMnSb polycrystalline alloys in the range [Formula: see text] were synthesized employing the standard solid-phase synthesis method. The crystal, magnetic, as well as electrical properties of the alloys were investigated using neutron powder diffraction and magneto-resistance measurements. The results reveal that the substitution of Ti for Ni within the temperature range of 2.5–300 K does not induce alterations in the crystal and magnetic structures of NiMnSb. The ordered Ni magnetic moment approaches zero. The study of the electrical transport properties of the Ni[Formula: see text]TixMnSb alloys, where [Formula: see text], has demonstrated a half-metallic state at low temperatures and metallic conductivity for temperatures exceeding 160 K. A semiconductor state manifests at titanium concentrations of x = 0.2 and was observed at temperatures below 21 K. The obtained experimental results are elucidated through first-principles theoretical calculations.

A new ferromagnetic semiconductor system of Eu[formula omitted]Sr[formula omitted]AgP [formula omitted] compounds: Crystallographic, magnetic, and magneto-resistive properties

Adjusting chemical pressure through doping is a highly effective method for customizing the chemical and physical properties of materials, along with their respective phase diagrams, thereby uncovering novel quantum phenomena. Here, we successfully synthesized Sr-doped Eu1−xSrxAgP (x=0.0−0.6) and conducted a comprehensive investigation involving crystallography, magnetization, heat capacity, and magnetoresistance. Utilizing X-ray diffraction and PPMS DynaCool measurements, we studied Eu1−xSrxAgP in detail. The hexagonal structure of parent EuAgP at room temperature, with the P63/mmc space group, remains unaltered, while the lattice constants expand. The magnetic phase transition from paramagnetism to weak ferromagnetism, as temperature decreases, is suppressed through the gradual introduction of strontium doping. Heat capacity measurements reveal a shift from magnon-dominated to predominantly phonon and electron contributions near the ferromagnetic phase with increasing doping levels. The resistivity–temperature relationship displays distinct characteristics, emphasizing the impact of Sr doping on modifying charge transport. Magnetoresistance measurements uncover novel phenomena, illustrating the adjustability of magnetoresistance through Sr doping. Notably, Sr doping results in both positive magnetoresistance (up to 20%) and negative magnetoresistance (approximately -60%). The resistivity and magnetic phase diagram were established for the first time, revealing the pronounced feasibility of Sr doping in modulating EuAgP’s resistivity. This study has provided valuable insights into the intricate interplay between structural modifications and diverse physical properties. The potential for technological advancements and the exploration of novel quantum states make Sr-doped Eu1−xSrxAgP a compelling subject for continued research in the field of applied physics.

Thickness dependence of Morin transition of Ru-doped α-Fe2O3 films detected by spin Hall magnetoresistance measurements

We conducted spin Hall magnetoresistance (SMR) measurements to investigate the Ru-doping effect on the Morin transition of α-Fe2O3(0001) films, which is the transition from the low-temperature antiferromagnetic state with c-axis magnetic moments to the high-temperature weak ferromagnetic state with c-plane magnetic moments, under a thickness of 6–100 nm. We clarified that the Morin temperature of the 2.6 at. % Ru-doped α-Fe2O3 film was greater than 400 K when the thickness was 100 nm and decreased with a decrease in thickness. Our results demonstrated that SMR measurements are a valid verification method for the Morin transition of very thin α-Fe2O3 films down to several nm.

Excess conductivity and magnetoresistance analysis for (BSF)x/(Bi, Pb)-2223 composite

This study examined the impact of adding hard ferrite Ba0.5Sr0.5Fe12O19 (BSF) nanoparticles to the Bi1.8Pb0.4Sr2Ca2Cu3.2O10+δ (Bi, Pb)-2223) superconductor phase. The investigation specifically focused on evaluating the critical current density, fluctuation-induced conductivity, and magnetoresistance of nano-(BSF)x/(Bi, Pb)-2223 composite, where 0.00 ≤ x ≤ 0.20 wt.%. The results revealed that the critical current density, Jc, increased with the addition of nano-(BSF) up to x = 0.04 wt.%, reaching a value of 441.20 A/cm2. The Aslamazov and Larkin (A–L) approach has been evaluated the fluctuation-induced conductivity. Several superconducting parameters, including coherence length ζc(0), effective layer thickness d, penetration depth λpd(0), and Fermi energy EF\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${E}_{F}$$\\end{document} showed improvement as the concentration of nano-(BSF) increased up to x = 0.04 wt.%. In addition to Ginzburg–Landau critical parameters, such as the thermodynamic critical field Bc(0), lower critical magnetic field Bc1(0), upper critical magnetic field Bc2(0), and critical current density Jc(0) demonstrated an increase up to x = 0.04 wt.%, followed by a decrease for higher concentrations. The magnetoresistance measurements were performed at various applied DC magnetic fields, with values ranging from 0.29 to 4.44 kG, and were analyzed using the thermally activated flux creep (TAFC) and Ambegaokar–Halperin (AH) models. The calculated flux pinning energy (U) increased with the addition of nano-(BSF) up to x = 0.04 wt.% and then decreased for x > 0.04 wt.%. Furthermore, the transition width (ΔT), was observed to increase as the applied magnetic field values increased. Moreover, the addition of nano-(BSF) increased the field-independent critical current density, Jc,0(0), up to x = 0.04 wt.%, after which it decreased for higher concentrations.

Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe3GaTe2.

Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd-even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe3GaTe2 helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.

Nonreciprocal superconducting transport and the spin Hall effect in gyrotropic structures

The search for superconducting systems exhibiting nonreciprocal transport and, specifically, the diode effect, has proliferated in recent years. This trend has encompassed a wide variety of systems, including planar hybrid structures, asymmetric SQUIDs, and certain noncentrosymmetric superconductors. A common feature of such systems is a gyrotropic symmetry, realized on different scales and characterized by a polar vector. Alongside time-reversal symmetry breaking, the presence of a polar axis allows for magnetoelectric effects, which, when combined with proximity-induced superconductivity, results in spontaneous non-dissipative currents that underpin the superconducting diode effect. With this symmetry established, we present a comprehensive theoretical study of transport in a lateral Josephson junction composed of a normal metal supporting the spin Hall effect, and attached to a ferromagnetic insulator. Due to the presence of the latter, magnetoelectric effects arise without requiring external magnetic fields. We determine the dependence of the anomalous currents on the spin relaxation length and the transport parameters commonly used in spintronics to characterize the interface between the metal and the ferromagnetic insulator. Therefore, our theory naturally unifies nonreciprocal transport in superconducting systems with classical spintronic effects, such as the spin Hall effect, spin galvanic effect, and spin Hall magnetoresistance. We propose an experiment involving measurements of magnetoresistance in the normal state and nonreciprocal transport in the superconducting state. Such experiment would, on the one hand, allow for determining the parameters of the model and thus verifying with a greater precision the theories of magnetoelectric effects in normal systems. On the other hand, it would contribute to a deeper understanding of the underlying microscopic origins that determine these parameters.

Dimensional control of interface coupling-induced ferromagnetism in CaRuO3/SrCuO2 superlattices

Due to the strong interactions from multiple degrees of freedom at the interfaces, electron-correlated oxide heterostructures have provided a promising platform for creating exotic quantum states. Understanding and controlling the coupling effects at the oxide interface are prerequisites for designing emergent interfacial phases with desired functionalities. Here, we report the dimensional control of the interface coupling-induced ferromagnetic (FM) phase in perovskite-CaRuO3/infinite-layered-SrCuO2 superlattices. Structural analysis reveals the occurrence of chain-type to planar-type structural transitions for the SrCuO2 layer as the layer thickness increases. The Hall and magnetoresistance measurements indicate the appearance of an interfacial FM state in the originally paramagnetic CaRuO3 layers when the CaRuO3 layer is in proximity to the chain-type SrCuO2 layers; this superlattice has the highest Curie temperature of ~75 K and perpendicular magnetic anisotropy. Along with the thickness-driven structural transition of the SrCuO2 layers, the interfacial FM order gradually deteriorates and finally disappears. As shown by the X-ray absorption results, the charge transfer at the CaRuO3/chain-SrCuO2 and CaRuO3/plane-SrCuO2 interfaces are different, resulting in dimensional control of the interfacial magnetic state. The results from our study can be used to facilitate a new method to manipulate interface coupling and create emergent interfacial phases in oxide heterostructures.

Magnetic nanoparticles (MNPs) based additively manufactured memory devices

Magnetic nanoparticles (MNPs) in a suspension have been shown to change resistance by an order of magnitude based on an applied field. We have prepared the MNPs samples with matrices of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PDOT:PSS) or H2O, and Co MNPs and carried out the magnetoresistive measurements. A switch-based model is used to understand the mechanism for the change in resistance. We further propose devices for memory based on MNPs. Building blocks for these devices are then fabricated using additive manufacturing techniques and measurements of change in resistance under the influence of a magnetic field are conducted. Niche applications of additive manufacturing techniques to the fabrication of these devices are proposed. The device uses MNPs suspended in a soft matter matrix. The application of a magnetic field is used to move the MNPs to or away from electrical contacts. Depending on the change of position of the MNPs, a connection is either made or broken, which can act as a 1 or a 0. The measured change in resistance observed in such devices is more than an order of magnitude depending on the matrix solution. The proposed device and its manufacturing process could be feasible for magnetic memory and in-memory computing devices on any flexible substrates.

Modulation of the optical and transport properties of epitaxial SrNbO3 thin films by defect engineering

The discovery of strontium niobate (SNO) as a potentially new transparent electrode has generated much interest due to its implications in various optoelectronic devices. Pristine SNO exhibits exceptionally low resistivity (∼10−4 Ω cm) at room temperature. However, this low resistivity occurs due to large number of carrier concentration in the system, which significantly affects its optical transparency (∼40%) in the visible range and hinders its practical applications as a transparent electrode. Here, we show that modulating the growth kinetics via oxygen manipulation is a feasible approach to achieve the desired optoelectronic properties. In particular, epitaxial (001) SNO thin films are grown on (001) lanthanum aluminate by pulsed laser deposition at different oxygen partial pressures and are shown to improve the optical transparency from 40% to 72% (λ = 550 nm) at a marginal cost of electrical resistivity from 2.8 to 8.1 × 10−4 Ω cm. These changes are directly linked with the multi-valence Nb-states, as evidenced by x-ray photoelectron spectroscopy. Furthermore, the defect-engineered SNO films exhibit multiple electronic phases that include pure metallic, coexisting metal-semiconducting-like, and pure semiconducting-like phases as evidenced by low-temperature electrical transport measurements. The intriguing metal-semiconducting coexisting phase is thoroughly analyzed using both perpendicular and angle-dependent magnetoresistance measurements, further supported by a density functional theory-based first-principles study and the observed feature is explained by the quantum correction to the conductivity. Overall, this study shows an exciting avenue for altering the optical and transport properties of SNO epitaxial thin films for their practical use as a next-generation transparent electrode.

Impact of Chiral Spinterfaces on Magneto-Photoluminescence Effects for Chiral Lead Halide Perovskites.

Chiral lead halide perovskites (LHPs) have been widely investigated in chiroptical spintronics due to their significant Rashba spin-orbit coupling (SOC) and chiral-induced spin selectivity (CISS). Ferromagnet/LHP spinterface stems from the orbital hybridization at the interface of the ferromagnet and the nonmagnetic semiconductor, where interfacial density of state is spin-dependent. By far, the impact of the ferromagnet/chiral LHP spinterface on magneto-photoluminescence (Magneto-PL) of chiral LHPs remains unknown. In this work, we find that the negative and tunable Magneto-PL effects for the pristine LHP bulk film can be drastically enhanced by incorporating ferromagnetic/chiral LHP interfaces. A large Magneto-PL magnitude can reach approximately -13% for the Ni/(S-MBA)2PbI4 interface at the field strengths of ±900 mT. With the assistance of circularly polarized PL spectra, anisotropic magneto-resistance, and X-ray photoelectron spectroscopy measurements, we demonstrate that the ferromagnet/chiral LHP interfaces are chirality/spin-dependent and possess ferromagnetic property due to distinct magnetic switching behavior and electronic orbit coupling at interfaces, which boost the Rashba splitting and spin mixing. The comprehensive effects of Rashba-induced exciton states and chiral-induced SOC at chiral spinterfaces with CISS are responsible for the enhanced Magneto-PL of Ni/(R/S-MBA)2PbI4. It is postulated that the chiral spinterfaces play a dominant role for achieving large and tunable magneto-optical effect of chiral LHPs. This work paves the way for chiroptical spintronic applications.

High-field magnetoresistance measurements on Ni75Co25 and Ni40Co60 alloys at 3 K and 300 K

In the present work, a detailed field dependence of the resistivity of Ni75Co25 and Ni40Co60 bulk alloys was measured at T = 3 K and 300 K up to high magnetic fields. The focus of the study was to determine the anisotropic magnetoresistance (AMR) and to get a quantitative description of the field-induced resistivity change, the latter not yet being available for Ni-Co alloys. The AMR parameters were derived from the resistivity data in the magnetically saturated (monodomain) state by using the Kohler analysis. The values of the AMR ratio were found to be close to the relevant previous data both at low and high temperatures. Due to the measurement precision and careful data evaluation, our AMR data obtained on well-characterized samples can be considered as reference values for the bulk state of the investigated compositions. In addition, also the resistivity anisotropy splitting was determined. The experimentally found field dependence of the resistivity at both T = 3 K and 300 K turned out to be at variance with the current theoretical descriptions both for the resistivity increase due to the ordinary magnetoresistance effect being significant at T = 3 K and for the resistivity decrease due to the magnon suppression process at T = 300 K, invoking for a refinement of theory in both cases.

The impact of boron doping in the tunneling magnetoresistance of Heusler alloy Co2FeAl

Heusler alloy-based magnetic tunnel junctions have the potential to provide high spin polarization, small damping, and fast switching. In this study, junctions with a ferromagnetic electrode of Co2FeAl were fabricated via room-temperature sputtering on Si/SiO2 substrates. The effect of boron doping on Co2FeAl magnetic tunnel junctions was investigated for different boron concentrations. The surface roughness determined by atomic force microscope, and the analysis of x-ray diffraction measurement on the Co2FeAl thin film reveals critical information about the interface. The Co2FeAl layer was deposited on the bottom and on the top of the insulating MgO layer as two different sample structures to compare the impact of the boron doping on different layers through tunneling magnetoresistance measurements. The doping of boron in Co2FeAl had a large positive impact on the structural and magneto-transport properties of the junctions, with reduced interfacial roughness and substantial improvement in tunneling magnetoresistance. In samples annealed at low temperature, a two-level magnetoresistance was also observed. This is believed to be related to the memristive effect of the tunnel barrier. The findings of this study have practical uses for the design and fabrication of magnetic tunnel junctions with improved magneto-transport properties.

Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition

The broken time reversal symmetry states may result in the opening of a band gap in TlBiSe2 leading to several interesting phenomena which are potentially relevant for spintronic applications. In this work, the quantum interference and magnetic proximity effects have been studied in Ni80Fe20/p-TlBiSe2/p-Si (Magnetic/TI) heterostructure using physical vapor deposition technique. Raman analysis shows the symmetry breaking with the appearance of A21u mode. The electrical characteristics are investigated under dark and illumination conditions in the absence as well as in the presence of a magnetic field. The outcomes of the examined device reveal excellent photo response in both forward and reverse bias regions. Interestingly, under a magnetic field, the device shows a reduction in electrical conductivity at ambient conditions due to the crossover of weak localization and separation of weak antilocalization, which are experimentally confirmed by magnetoresistance measurement. Further, the photo response has also been assessed by the transient absorption spectroscopy through analysis of charge transfer and carrier relaxation mechanisms. Our results can be beneficial for quantum computation and further study of topological insulator/ferromagnet heterostructure and topological material based spintronic devices due to high spin orbit coupling along with dissipationless conduction channels at the surface states.

Multiple channel transport properties of topological surface states in SmB6 nanoribbons

SmB6, a topological Kondo insulator, possesses topologically protected surface states, in which carrier mobility is supposed to be high but is significantly varied in orders of magnitude dependent upon characterization methods. Herein, we performed magnetoresistance measurements on a Hall-bar device constructed on a highly uniform SmB6 nanoribbon with (001) surface grown by chemical vapor deposition. Unusual non-linear Hall resistance was observed at low temperature and explained with a two-carrier model. The two types of carriers were attributed to two types of Fermi pockets on the Brillouin zone of the SmB6 (001) surface. The Fermi pocket on Γ point provided high hole mobility up to 1.4×103 cm2/V s but low hole density at a temperature of 2.2 K. On the other hand, the Fermi pockets on X points supplied low electron mobility down to 1.8 cm2/V s but high electron density. The identification of the two types of pockets laid the foundation for the understanding of the transport via the topological surface states of the SmB6 (001) surface.

Formation of helical spin alignment in the AFM/FM/AFM trilayers by spin–orbit torque controlled exchange bias

Non-collinear spin structures can exhibit unusual magnetic properties that cannot be expected in an ordinary collinear ferromagnet (FM) due to the chiral alignment of magnetic moments, offering new opportunities for applications in the field of spintronics. In the present study, we demonstrate that exchange bias pinning can be applied to a single FM layer in two different directions simultaneously, resulting in modified magnetic behaviors due to the formation of non-collinear helical spin structures in the multilayers of Co0.7Ni0.3O (antiferromagnet, AFM)/Co0.7Ni0.3 (FM)/Co0.7Ni0.3O (AFM)/Pt (heavy metal, HM). The pinning of spins at one interface between FM and AFM/HM was controlled by spin Hall current originating from the electrical current through the HM layer at room temperature, while the spins at the other interface between FM and AFM were pinned in a fixed direction, hence allowing for the formation of a helical spin structure along the FM layer thickness with controllable chirality at room temperature. Modified magnetic behaviors of a helical spin structure were confirmed from measurements of magnetic hysteresis and magnetoresistance, as well as direct observation of magnetic domains.

Enhancing Interfacial Ferromagnetism and Magnetic Anisotropy of CaRuO3/SrTiO3 Superlattices via Substrate Orientation.

Artificial oxide heterostructures have provided promising platforms for the exploration of emergent quantum phases with extraordinary properties. One of the most interesting phenomena is the interfacial magnetism formed between two non-magnetic compounds. Here, a robust ferromagnetic phase emerged at the (111)-oriented heterointerface between paramagnetic CaRuO3 and diamagnetic SrTiO3 is reported. The Curie temperature is as high as ≈155K and the saturation magnetization is as large as ≈1.3µB per formula unit for the (111)-CaRuO3/SrTiO3 superlattices, which are obviously superior to those of the (001)-oriented counterparts and are comparable to the typical itinerant ferromagnet SrRuO3. A strong in-plane magnetic anisotropy with six-fold symmetry is further revealed by the anisotropic magnetoresistance measurements, presenting a large in-plane anisotropic field of 3.0-3.6T. More importantly, the magnetic easy axis of the (111)-oriented superlattices can be effectively tuned from 〈 1〉 to 〈 〉 directions by increasing the layer thickness of SrTiO3. The findings demonstrate a feasible approach to enhance the interface coupling effect by varying the stacking orientation of oxide heterostructures. The tunable magnetic anisotropy also shows potential applications in low-power-consumption or exchange spring devices.

In Situ Scattering Studies of Superconducting Vacancy‐Ordered Monoclinic TiO Thin Films

AbstractThe structural and transport properties of vacancy‐ordered monoclinic superconducting titanium oxide (TiO) thin films grown by molecular beam epitaxy are investigated. The evolution of the crystal structure during growth is monitored by in situ synchrotron X‐ray diffraction. Long‐range ordering of Ti and O vacancies in the disordered cubic phase stabilizes the vacancy‐ordered monoclinic TiO phase. The reduced structural disorder arising from vacancy‐ordering is correlated with a superconductor‐metal transition (SMT) in contrast to the superconductor‐insulator transition (SIT) observed in cubic TiO, orthorhombic Ti2O3, and the Magneli γ − Ti3O5 and γ − Ti4O7 phase. Magnetoresistance measurements for the SIT phases indicate superconducting fluctuations persisting in the normal phase. These results confirm the role of disorder related to Ti and O vacancies and structural inhomogeneity in determining the electronic properties of the normal state of titanium oxide‐based superconductors.

Spontaneous Hall effect in the magnetic Weyl semimetallic Eu2Ir2O7 (111) thin films

Here, we have carried out a low-temperature magnetization and magnetotransport study on epitaxial antiferromagnetic Eu2Ir2O7 (111) thin films with an all-in-all-out/all-out-all-in spin structure to delve into the possibility of realizing spontaneous Hall effect that can provide strong experimental evidence for the existence of the Weyl semimetallic phase. The temperature-dependent resistivity on Eu2Ir2O7 (111) thin films indicates a semimetallic transition below 90 K and the existence of a correlated metallic state in the high-temperature regime (90–300 K). Magnetoresistance measurements suggest that at a low temperature (below 10 K), the all-in-all-out (AIAO) spin structure is stable enough against the applied magnetic field, whereas above 10 K, application of magnetic field causes field-induced modification of the spin structure and plastic domain deformation. Hall resistivity shows a spontaneous Hall effect (SHE) in the low-temperature semimetallic phase of Eu2Ir2O7 (111) thin films with minimal magnetization (AIAO/all-out-all-in spin structure). The observed SHE provides strong evidence for the emergent Weyl semimetallic phase in the (111) thin film geometry of antiferromagnetic Eu2Ir2O7.

Thermodynamic and magnetotransport properties of EuAg2Ge2 single crystals

Here, we report the crystallographic, thermodynamic, and magnetotransport properties of flux grown EuAg2Ge2 single crystals using X-ray diffraction, anisotropic magnetic susceptibility, and magnetization, heat capacity, electrical resistivity, and magnetoresistance measurements. The room temperature powder X-ray diffraction pattern confirms that EuAg2Ge2 crystallizes in a body-centered tetragonal ThCr2Si2–type structure (space group I4/mmm) with lattice parameters, a = 4.401 Å and c = 10.845 Å. The magnetic susceptibility data reveal two subsequent antiferromagnetic transitions at TN1 ∼ 8.3 K, and TN2 ∼ 6.2 K. For H‖c at T = 5 K, the magnetization data show the spin-flop like metamagnetic transition around the critical field of 1.4 T. The existence of antiferromagnetic transitions is further confirmed by the heat capacity measurements, which display two anomalies around TN1 = 8.3 K and TN2 = 6.1 K. The electrical resistivity data show the metallic behavior of the compound, which is best described by the Bloch-Grüneisen model above 30 K. At low temperatures, the antiferromagnetic transition manifests through a slight upturn around 8 K, followed by a sharp drop in the resistivity data. The transverse magnetoresistance (MR) measured for H‖c below TN first increases, showing a broad maximum at critical field strength that shifts towards lower fields with increasing temperature. With further increasing fields beyond the maximum, MR decreases, and changes its value from positive to negative. The evolution of MR from positive to negative could be associated with the metamagnetic transition in EuAg2Ge2. In the paramagnetic region, MR remains negative across the entire field range.