Magnetoresistance Effect Research Articles

Flexible magnetoelectric systems: Types, principles, materials, preparation and application

Recently, the rapid development of flexible electronic materials and devices has profoundly influenced various aspects of social development. Flexible magnetoelectric systems (FMESs), leveraging magnetoelectric coupling, hold vast potential applications in the fields of flexible sensing, memory storage, biomedicine, energy harvesting, and soft robotics. Consequently, they have emerged as a significant branch within the realm of flexible electronic devices. According to its working principle, FMES are divided into three categories: FMES based on magnetodeformation and piezoelectric effects, FMES based on giant magnetoresistive effect, and FMES based on electromagnetic induction. Although some articles have reviewed the first two types of FMES, there is a lack of systematic introduction of the FMES based on electromagnetic induction in existing studies, especially the development history and research status of the three types of FMES. Therefore, this paper systematically reviews the development history and research status of these three kinds of FMES and reveals the working principle and mode of the flexible magnetoelectric system from the perspective of the force-electricity-magnetism coupling mode. In addition, the material selection criteria, device manufacturing methods, and application fields of the FMES are also introduced. Finally, this review delves into the challenges and opportunities confronting the development of FMES, exploring the future development directions. This review aims to establish a theoretical foundation and provide methodological strategies for future research on FMES. It is anticipated to promptly address the current gap in this research field and facilitate the development of the flexible electronic family.

Ferrospintronic Order in Noncentrosymmetric Antiferromagnets: An Avenue toward Spintronic‐Based Computing, Data Storage, and Energy Harvesting

A ferroic order, ferrospintronic (FSp) order, arising in some magnetic materials lacking inversion symmetry is reported on. Emerging from a macroscopic spontaneous symmetry breaking of both the time reversal T and the spatial inversion, while maintaining the symmetry, the order parameter is given by the dipolar moment of the spin density . Herein a model is advanced that fulfills the symmetry requirements mentioned earlier and its properties are investigated. With the aid of a mean‐field theory, its stability against thermal fluctuations is studied and evidence of truly ferroic states that result from breaking its symmetry is provided. Three predictions that can be checked experimentally to distinguish this class of materials from other compounds are provided. In the first place, it is illustrated that FSp systems host the potential for multiferroic behavior. Second, it is shown that the generic FSp system responds under strain by generating spin currents that can be used in spintronic devices, therefore showing a piezospintronic effect. Finally, it is proven that domain walls in the FSp order parameter lead to magnetoresistive effects. All of the findings mentioned earlier are a significant breakthrough in spintronics and multiferroic phenomena and they have wide‐ranging implications for advancing materials and technologies, particularly in computing and energy harvesting.

Observation of planar Hall effect in the topological insulator NaCd4As3

The observation of the planar Hall effect (PHE) illuminates the spin textures and topological properties of materials, indicating potential applications in quantum computing and electronic devices. Here, we present a study on the planar Hall transport of topological insulator NaCd4As3 single crystals. When the magnetic field is rotated within the sample plane relative to the current direction, we observe remarkable planar Hall resistivity and giant planar anisotropic magnetoresistance (AMR), both consistent with the theoretical expression of the PHE. Further analysis reveals that the orbital magnetoresistance effect, unrelated to surface electrons from topological surface states or bulk electrons from nontrivial Berry phases, lays a dominant role in the PHE in NaCd4As3. Additionally, the AMR ratio reaches −43% at 3 K under 14 T and remains −9% at room temperature, markedly exceeding that of traditional ferromagnetic metals. These findings provide a platform for understanding the PHE mechanism in topological insulators and highlight the potential of NaCd4As3 for angle and magnetic field detection applications.

Large magnetoresistance and spin negative differential resistance in photoisomers-based molecular spin valves

By using non-equilibrium Green's functions in combination with density functional theory, the spin transport properties of photoisomers-based molecular spin valves constructed by salicylidene methylamine connected with two cobalt- dibenzotetraaza[14]annulene (Co-DBTAA) complex molecules via acetylene linkers are explored. A large magnetoresistance (MR) effect with a MR ratio larger than 104 can be observed in the molecular spin valves whether salicylidene methylamine is in the cis-enol form or the trans-keto form. Moreover, spin negative differential resistance (NDR) effects are also observed in the photoisomers-based molecular spin valves. The spin transport mechanisms are explored for MR and spin NDR effects observed in the molecular spin valves.

Recent Progress in Two-Dimensional Magnetic Materials.

The giant magnetoresistance effect in two-dimensional (2D) magnetic materials has sparked substantial interest in various fields; including sensing; data storage; electronics; and spintronics. Their unique 2D layered structures allow for the manifestation of distinctive physical properties and precise performance regulation under different conditions. In this review, we present an overview of this rapidly developing research area. Firstly, these 2D magnetic materials are catalogued according to magnetic coupling types. Then, several vital effects in 2D magnets are highlighted together with theoretical investigation, such as magnetic circular dichroism, magneto-optical Kerr effect, and anomalous Hall effect. After that, we forecast the potential applications of 2D magnetic materials for spintronic devices. Lastly, research advances in the attracting magnons, skyrmions and other spin textures in 2D magnets are discussed.

The effect of Mn doping on the electrical and magnetic properties of Cr2Te3 thin films

Mn doped Cr2-xMnxTe3 thin films were prepared by molecular beam epitaxy technology. The effect of Mn doping concentration on the structural, morphological, electrical and magnetic performance of Cr2Te3 thin films were detailed analyzed. By varying the beam current of the Mn source, it is found that Mn can be doped into the Cr2Te3 thin film when the Mn source temperature is lower than 700 ℃, while the Mn tends to bind with Te as MnTe crystal for Mn source temperature higher than 700 ℃. Cr2-xMnxTe3 films all exhibt strong ferromagnetism with a Curie temperature of around 175 K. The magnetization of the films decreases with increasing Mn doping concentration. A notable negative magnetoresistance effect is observed with the highest MR ratio about −60 % in the vicinity of the Curie temperature. A clear topological Hall signal was observed in the sample with a Mn source temperature of 700 ℃ at low temperature (2 K). These results imply that the electrical and magnetic properties of Cr2Te3 materials can be effectively controlled by doping to meet the practical needs of different fields.

Monitoring of crack-induced electromagnetic vector field based on tunnel magnetoresistance effect

Electromagnetic radiation technology is widely used as a non-destructive, non-contact monitoring method, but the spatial information contained in it is ignored. A three-axis electromagnetic sensor was developed to monitor the electromagnetic radiation generated by the fracture of brittle rocks based on the tunnel magnetoresistance effect. The sensor has significant independence, anti-interference in three orthogonal directions, and exhibits high linearity. The monitored signals can be regarded as the components of the electromagnetic field vector in three directions. Based on the idea of vector synthesis, the peak index and peak matching index of the synthesized signal are extracted for the directional characterization and can be used to identify the direction of cracks.

A Spin‐Polarized Electron‐Induced MXene‐KBi0.9Co0.1Fe2O5 Photocatalyst for Enhanced Dye Degradation

In photocatalysts aimed to degrade environmental pollutants, photons are generally used as primary stimuli to generate electron–hole pairs to target the chemical bonds to disintegrate. Recently, electron spin has been reported as an essential degree of freedom to improve the performance of photocatalysts. In this work, spin‐polarized electrons and holes are introduced into a brownmillerite KBi0.9Co0.1Fe2O5 semiconductor and a two‐dimensional (2D) MXene composite system by application of an external magnetic field. The spin polarization properties are monitored by measuring the magnetoresistance effect of the MXene‐KBCFO device, which is related to the carrier transfer efficiency. Remarkably, the photocatalytic performance of MXene‐KBCFO is significantly enhanced by the simultaneous application of an external magnetic field and illumination due to the increased number of spin‐polarized photoexcited carriers caused by the synergy effect of the 2D MXene heterostructure together with the ferromagnetic spin ordering. This results in increased reaction hotspots, effective built‐in electric field, extended carrier lifetime, and reduced charge recombination owing to parallel alignment of electron spin orientation. The results show that the efficiency and stability of photocatalytic dye degradation can be effectively enhanced by manipulating the spin‐polarized electrons in the MXene‐based oxide‐perovskite heterostructure photocatalyst.

An atomically controlled insulator-to-metal transition in iridate/manganite heterostructures.

All-insulator heterostructures with an emerging metallicity are at the forefront of material science, which typically contain at least one band insulator while it is not necessary to be. Here we show emergent phenomena in a series of all-correlated-insulator heterostructures that composed of insulating CaIrO3 and insulating La0.67Sr0.33MnO3. We observed an intriguing insulator-to-metal transition, that depends delicately on the thickness of the iridate component. The simultaneous enhancements of magnetization, electric conductivity, and magnetoresistance effect indicate a percolation-type nature of the insulator-to-metal transition, with the percolation threshold can be reached at an exceptionally low volume fraction of the iridate. Such a drastic transition is induced by an interfacial charge transfer, which interestingly alters the electronic and crystalline structures of the bulk region rather than the limited ultrathin interface. We further showcased the central role of effective correlation in modulating the insulator-to-metal transition, by demonstrating that the critical thickness of iridate for triggering the metallic state can be systematically reduced down to a single unit-cell layer.

The structure, magnetic properties, magnetotransport and temperature coefficient of resistivity of hexagonal 4H-SrMnO3 manganite

The perovskite hexagonal SrMnO3 manganite with four layers (4H-SrMnO3) have been one of the hot topics in materials science due to the physical characteristics of antiferromagnetic, ferroelectric, and thermoelectric effects. The transport properties and magnetoresistance (MR) effect of 4H-SrMnO3 have seldom been reported. The structure, temperature coefficient of resistivity (TCR), magnetic and magnetotransport properties of the 4H-SrMnO3 SrMnO3 manganite obtained by solid state reaction have been investigated in this work. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) measurements at room temperature reveal that the SrMnO3 sample exhibits a pure hexagonal symmetric structure, with uniform distribution of particles and elements. Under applied magnetic fields of 2000 Oe, the SrMnO3 sample exhibits a transition from antiferromagnetic (AFM) to paramagnetic (PM) behavior at approximately 280 K, known as the Néel temperature (TN). The resistance is influenced by the magnetic field, but overall exhibits an insulating state. Remarkably, the SrMnO3 sample shows significant MR effect near room temperature. The negative MR near room temperature varies from 5.8 % with 1 T field to 16.8 % with 6 T field, indicating an existence of obvious MR in the hexagonal AFM SrMnO3 manganite. Furthermore, the maxmium value of TCR reaches 4.34 % K−1 near room temperature. These findings of room-temperature TCR and room-temperature MR in the AFM 4H-SrMnO3 hold immense value for the research and potential application of the AFM spintronics and devices.

Conduction in yttrium iron garnets with nickel dopant: Potential for sensor applications

Doped yttrium iron garnet materials exhibit semiconducting behavior and have potential applications in resistive-based sensors, including thermoresistive and gas sensors. In this study, we synthesized Ni-doped yttrium iron garnet samples using the sol-gel method combined with heat treatment. The crystal structure, morphology, and Ni incorporation into the crystal lattice were investigated using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Raman spectroscopy. The saturation magnetization of the samples in the ground state was measured in a Physical Property Measurement System (PPMS) at 5 K. The experimental magnetic moments deviate significantly from the values calculated based on the cation distribution models, suggesting the occupation of Ni2+ and Fe2+ at the octahedral and tetrahedral sites, respectively, with the latter due to oxygen vacancies. We investigated the resistivity, magnetoresistance effect, and hydrogen sensing properties to elucidate the conduction mechanism. At room temperature, the resistivity of the samples decreased sharply as the oxygen vacancy concentration increased, from ∼108 Ωcm in sample x = 0 to ∼106 Ωcm in sample x = 0.08. The resistance of the samples increased when exposed to hydrogen gas, supporting the prediction from the magnetization data that the samples exhibit n-type semiconductor characteristics. The samples showed good sensitivity to H2 gas. At 250°C, sample x = 0.08 exhibits a response of S =11.5, the response time (τres. ∼8 s), and recovery time (τrec. ∼22 s) at 100 ppm hydrogen concentration.

A perspective on magnetic field-enhanced electrocatalytic water splitting

Magnetic field effects have received widespread attention due to their ability to enhance the process of water splitting at multiple scales. However, a systematic and comprehensive understanding of the source of the magnetic effect and the magnetic modulation of magnetic catalysts is lacking. This perspective focuses on recent advancements in harnessing external magnetic field to improve electrocatalytic water splitting and suggests future directions. First, the mechanism of several magnetic effects and their effects on water splitting are elaborated in detail, including the magnetohydrodynamic effect, magnetothermal effect, spin polarization effect, and magnetoresistance effect. Then, the classification and construction strategies of magnetic effect catalysts are summarized, primarily divided into single metal/alloy catalysts, metal oxide-based catalysts, and other magnetic catalysts. Finally, the challenges and potential perspective of magnetic field-enhanced water splitting are discussed, including mechanism study, in situ characterization, and multi-field synergy effects.

Effective control of magnetism and transport properties of monolayer WV2N4 with two magnetic atomic layers and its van der Waals heterostructure

The large magneto-resistance (MR) effect produced by electric control of the magnetic state for van der Waals (vdW) heterostructures composed of vdW intrinsic magnets holds great significance for low-dissipation spintronic devices. Our first-principles calculations reveal that the proposed monolayer WV2N4 is a ferromagnetic (FM) metal with two magnetic V atomic layers, and the interlayer magnetic coupling between two V atomic layers can be switched from FM to antiferromagnetic coupling by applying a small compressive strain. Interestingly, a large MR ratio of 253% is achieved in the proposed graphite/monolayer WV2N4/graphite vdW heterostructure using a −1.5% compressive strain. Combining the strain-induced change in magnetism of monolayer WV2N4 and the graphite/monolayer WV2N4/graphite vdW heterostructure with the inverse piezoelectricity of piezoelectric materials, a feasible strategy is proposed to achieve electric control of the interlayer magnetic coupling of monolayer WV2N4 in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by piezoelectric materials by utilizing the inverse piezoelectricity, thereby generating a large MR ratio in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by the piezoelectric material. Our work presents a promising avenue for developing energy-efficient spintronic devices.

Field‐Induced Butterfly‐Like Anisotropic Magnetoresistance in a Kagome Semimetal Co3In2S2

AbstractWith the interplay between magnetism and topological bands, magnetic kagome semimetals provide promising platforms for exploring exotic correlated electronic states and quantum phenomena such as anomalous Hall effect, quantum spin liquid, and unconventional magnetoresistance, as well as driving advances in electronic and spintronic applications. Here, a field‐induced butterfly‐like anomalous anisotropic magnetoresistance (AMR) effect in an intriguing kagome semimetal Co3In2S2 is reported. The kagome‐lattice Co3In2S2 single crystals are synthesized via a polycrystal‐source chemical vapor transport approach, possessing a high carrier mobility reaching 104 cm2V−1s−1. The Co3In2S2 single crystal exhibits a canted antiferromagnetic state below 5 K, but intriguingly, it is easily transformed into a ferromagnetic state under a small external magnetic field. Furthermore, the planar Hall effect (PHE) is detected, stemming from the complex contribution of field‐induced ferromagnetism and orbital magnetoresistance. Remarkably, as the magnetic field increases, the low‐temperature magnetoresistance behavior of the Co3In2S2 reveals a butterfly‐like AMR effect with a maximum value of 850%, exhibiting a superposition of the two‐, four‐, and six‐fold AMR terms. Band structure calculations suggest that such a field‐induced butterfly‐like AMR effect may originate from the modulations of the electronic structure near the Fermi level by the magnetic moment. The findings offer a valuable platform for understanding the anomalous AMR effect and for the development of advanced spintronic devices.

An Adaptive Eccentricity Correction Method for Arrayed Single‐Axis TMR Current Sensors

Current sensors based on the tunneling magnetoresistive effect (TMR) are widely used for current measurement due to their high sensitivity, small size, and low power consumption. This paper proposes an effective error correction model to rectify the eccentricity of the transmission line, which can cause a significant measurement error in the ring‐array single‐axis TMR sensor. The model employs a convolutional neural network (CNN) to identify the relationship between the conductor eccentricity and the output of three sensors. The resulting correction factor is then fed back to eliminate the error associated with wire eccentricity. Concurrently, the Sparrow search algorithm (SSA) is employed to optimize the hyperparameters of the convolutional neural network (CNN) in order to enhance the model's performance. The experimental results demonstrate that the maximum error of the ring‐array single‐axis TMR current sensor, corrected by SSA‐CNN, is less than 0.42%, which markedly enhances the precision of the measurement. © 2024 Institute of Electrical Engineers of Japan and Wiley Periodicals LLC.

In-plane anisotropic magnetoresistance and planar Hall effect in off-stoichiometric single crystal Mn3Ga

We report the observation of in-plane anisotropic magnetoresistance (AMR) and planar Hall effect in our recently discovered kagome antiferromagnetic off-stoichiometric single crystal of Mn3Ga. We found that the in-plane AMR is dominated by a sixfold symmetry at low temperature due to the kagome lattice magnetocrystalline anisotropy. However, an unusual fourfold symmetry is also revealed by the angular-dependent AMR measurements, which originates from the little distortion of the crystal accompanying the slight ferromagnetic transition. Moreover, we also found a clear planar Hall effect signal in off-stoichiometric single crystal of Mn3Ga, which may be related to the chiral anomaly, one of the signatures of the magnetic Weyl fermions.

Optimized TCR and MR properties of La0.7-xSmxCa0.3MnO3 ceramics by Sm3+ doping

La0.7Ca0.3MnO3 (LCMO), with its high temperature coefficient of resistance (TCR) and large magnetoresistance (MR) effect, has emerged as a leading material in the field of new multi-functional ceramics. Enhancing the magnetoresistive effect of LCMO in low magnetic field and expanding its application range is one of the main research goals of this kind of materials. In this work, La0.7-xSmxCa0.3MnO3 (LSCMO) (0≤x≤0.09) ceramic targets with different doping amounts were successfully prepared by sol-gel method, and the influence mechanism of Sm3+ doping on the magnetoresistive effect and electrical transport performance of LSCMO was systematically analyzed. X-ray diffraction (XRD) results showed that the lattice parameters (a,b,c,V) of LSCMO decreased slightly, indicating that the doping amount of Sm3+ at the A-site increased. Scanning electron microscopy (SEM) showed that the grains were closely connected without obvious pores, the grain size decreased slightly. The ρ-T curve shows an obvious metal-insulator (M-I) transition, with the increase of Sm3+, the increase of resistivity, metal-insulator transition temperature (TMI) and ferromagnetic-paramagnetic (FM-PM) transition temperature (TC) move towards low temperature. When x=0.015, the peak value of TCR reaches 41.94%·K-1, and when x= 0.06, the peak value of MR reaches 80.25%, both TCR and MR are improved. The results show that: Sm3+ doping can effectively enhance the electromagnetic transport performance of LSCMO. This material has a very wide application prospect in the fields of magnetic storage, and infrared detection.

GaAs quantum transport: Scrutinizing the effects of pressure, temperature and Rashba-Dresselhaus spin-orbit interactions for next-generation spintronic devices

This research investigates the spin-dependent transmission attributes and associated Giant Magnetoresistance (GMR) effect emerging from spin-polarized electron tunneling in a GaAs quantum well superlattice (QWS). The influence of Rashba and Dresselhaus spin-orbit interactions (SOIs) on transport properties is analyzed under the framework of the scattering matrix method. Our quantitative findings revealed that these spin-orbit couplings (SOCs) introduce inherent spin-filtering mechanisms, significantly influencing transmission probabilities. Furthermore, numerical estimations proved that external perturbations including pressure, temperature and structural modifications considerably impact the quantum transport characteristics of the scrutinized system. Additionally, major outcomes suggest that precise manipulation of spin-dependent transport in GaAs QWS holds promise for advancing spintronics technology. It is found that with well-tuned parameter values, the SOCs behave as a spin-dependent barrier modifying the band shape and its anisotropy. This study offers novel insights into the fundamental physics governing spin-dependent transport within quantum superlattices with promising implications for the development of advanced spintronic devices.

Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures.

Magnetoresistance effects are crucial for understanding the charge-spin transport as well as propelling the advancement of spintronic applications. Here, we report the coexistence of magnetic-moment-dependent (MD) and magnetic-field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to different spin scattering mechanisms, these two types of non-reciprocal charge transports show opposite polarities with respect to the magnetic field direction, which further enables an effective phase modulation of the angular-dependent magnetoresistance. The demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic memory and sensor designs.

Exploration of room temperature magnetodielectric behavior in Nd0.5Dy0.5FeO3 thin films and transmission line resonators in GHz frequency range

This study explores the room-temperature magnetodielectric (MD) and magnetoresistance (MR) properties of Nd0.5Dy0.5FeO3 thin films on n-type silicon substrates from 4 Hz to 2 MHz. The observed MD effect registers a change of ∼23 %, and the MR effect manifests a change of ∼11 % when subjected to an applied magnetic field of 2.5 T at a frequency of 177 Hz. Interestingly, the MD effect was absent at 1 T across all frequencies. However, we observed an MR of 6 % at 1 T, implying the possibility of an intrinsic MD effect or the co-existence of both intrinsic and extrinsic contributions to the MD effect. To comprehensively gauge the dielectric properties of the thin film at higher frequencies, a 5-GHz microstripline resonator was fabricated. Coupled with experimental data and simulations, this study reveals a dielectric constant of ∼56 for the Nd0.5Dy0.5FeO3 thin film at 5 GHz and 300 K.