Synthetic perpendicular magnetic anisotropy (PMA) ferrimagnets consisting of 30-nm-thick D0-MnGa and CoMnSi (CMS) cubic Heusler alloys with different thicknesses of 1, 3, 5, 10 and 20 nm, buffered and capped with a Cr film, are successfully grown epitaxially on MgO substrate. Two series samples with and without post annealing at 400 C are fabricated. The (002) peak of the cubic L2 structure of CMS films on the MnGa layer is observed, even for the 3-nm-thick CMS film for both un-annealed and annealed samples. The smaller remnant magnetization and larger switching field values of CMS (1–20 nm)/MnGa (30 nm) bilayers compared with 30-nm-thick MnGa indicates antiferromagnetic (AFM) interfacial exchange coupling (J) between MnGa and CMS films for both un-annealed and annealed samples. The critical thickness of the CMS film for observing PMA with AFM coupling in the CMS/MnGa bilayer is less than 10 nm, which is relatively large compared to previous studies.