Abstract
Strong magnetoelectric coupling was demonstrated in magnetic/antiferroelectric heterostructures of FeGaB/Pb(La,Sn,Zr,Ti)O3, which exhibited a voltage induced coercive field change of 7–10 Oe and ferromagnetic resonance field shifts by ∼80 Oe. Nonvolatile voltage induced magnetization switching and ferromagnetic resonance field shift in FeGaB were realized based on the ferroelectric-antiferroelectric phase transition in Pb(La,Sn,Zr,Ti)O3. The nonvolatile strong voltage control of magnetism in magnetic/antiferroelectric heterostructures has great implications in compact and power efficient spintronics and RF/microwave components.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
