Magnetic Tunnel Junctions Research Articles

Dynamics of spin oscillation in double barrier synthetic antiferromagnet based magnetic tunnel junction in presence of spin-transfer torque

In this work, we have studied the spin dynamics of a synthetic antiferromagnet (AFM)/heavy metal/ferromagnet double barrier magnetic tunnel junction in the presence of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction, interfacial Dzyaloshinskii–Moriya (iDM) interaction, Néel field, and Spin–Orbit Coupling (SOC) with different Spin-Transfer Torque (STT). We employ the Landau–Lifshitz–Gilbert–Slonczewski equation to investigate the AFM dynamics of the proposed system. We found that the system exhibits a transition from regular to damped oscillations with the increase in strength of STT for systems with a weaker strength of iDM interaction than RKKY interaction while displaying sustained oscillations for systems having the same order of RKKY and iDM interactions. On the other hand, the systems with sufficiently strong iDM interaction strength exhibit self-similar but aperiodic patterns in the absence of the Néel field. In the presence of the Néel field, the RKKY interaction dominating systems exhibit chaotic oscillations for low STT but display sustained oscillations under moderate STT. Our results suggest that the decay time of oscillations can be controlled via SOC. The system can work as an oscillator for low SOC but displays non-linear characteristics with the rise in SOC for systems having weaker iDM interaction than RKKY interactions. In contrast, opposite characteristics are noticed for iDM interaction dominating systems. We found periodic oscillations under low external magnetic fields in RKKY interaction dominating systems. However, moderate fields are necessary for sustained oscillation in iDM interaction dominating systems. Moreover, the system exhibits saddle-node bifurcations and chaos under moderate Néel field and SOC with suitable RKKY and iDM interactions. In addition, our results indicate that the magnon lifetime can be enhanced by increasing the strength of iDM interaction for both optical and acoustic modes.

Thermal Characterization of Ultrathin MgO Tunnel Barriers.

Magnetic tunnel junctions (MTJs) with ultrathin MgO tunnel barriers are at the heart of magnetic random-access memory (MRAM) and exhibit potential for spin caloritronics applications due to the tunnel magneto-Seebeck effect. However, the high programming current in MRAM can cause substantial heating which degrades the endurance and reliability of MTJs. Here, we report the thermal characterization of ultrathin CoFeB/MgO multilayers with total thicknesses of 4.4, 8.8, 22, and 44 nm, and with varying MgO thicknesses (1.0, 1.3, and 1.6 nm). Through time-domain thermoreflectance (TDTR) measurements and thermal modeling, we extract the intrinsic (∼3.6 W m-1 K-1) and effective (∼0.85 W m-1 K-1) thermal conductivities of annealed 1.0 nm thick MgO at room temperature. Our study reveals the thermal properties of ultrathin MgO tunnel barriers, especially the role of thermal boundary resistance, and contributes to a more precise thermal analysis of MTJs to improve the design and reliability of MRAM technologies.

Decision making module based on stochastic magnetic tunnel junctions

Decision making module based on stochastic magnetic tunnel junctions

Substantially Enhanced Spin Polarization in Epitaxial CrTe2 Quantum Films.

2D van der Waals (vdW) magnets, which extend to the monolayer (ML) limit, are rapidly gaining prominence in logic applications for low-power electronics. To improve the performance of spintronic devices, such as vdW magnetic tunnel junctions, a large effective spin polarization of valence electrons is highly desired. Despite its considerable significance, direct probe of spin polarization in these 2D magnets has not been extensively explored. Here, using 2D vdW ferromagnet of CrTe2 as a prototype, the spin degrees of freedom in the thin films are directly probed using Mott polarimetry. The electronic band of 50 ML CrTe2 thin film, spanning the Brillouin zone, exhibits pronounced spin-splitting with polarization peaking at 7.9% along the out-of-plane direction. Surprisingly, atomic-layer-dependent spin-resolved measurements show a significantly enhanced spin polarization in a 3 ML CrTe2 film, achieving 23.4% polarization even in the absence of an external magnetic field. The demonstrated correlation between spin polarization and film thickness highlights the pivotal influence of perpendicular magnetic anisotropy, interlayer interactions, and itinerant behavior on these properties, as corroborated by theoretical analysis. This groundbreaking experimental verification of intrinsic effective spin polarization in CrTe2 ultrathin films marks a significant advance in establishing 2D ferromagnetic atomic layers as a promising platform for innovative vdW-based spintronic devices.

First principle atomistic modelling of magnetic tunnel junction (MTJ) to enhance its tunnel magneto-resistance (TMR) ratio

Abstract This paper investigates the impact of electrode materials on the Tunnel Magneto-Resistance (TMR) ratio of Magnetic Tunnel Junction (MTJ) device. Four different structures of MTJ have been simulated by using cobalt (Co), Nickel (Ni), Iron (Fe) and two alloy materials of nickel-iron (NiFe) and cobalt-iron (CoFe). These materials have been used as ferromagnetic electrodes. Mulliken population and transmission spectrum observed in both parallel and antiparallel configurations of these devices to understand the spin transport properties and Tunnel Magneto-Resistance (TMR) ratio has been estimated. The first principal study was performed based on density function theory (DFT) and Non-equilibrium Green’s Function (NEGF) computational methods using the QuantumATK simulation tool to study properties such as band structure, the density of states (DOS), Spin Transfer Torque (STT), I-V characteristics and TMR. This study explores how different electrode materials affect the Tunnel Magneto-Resistance (TMR) ratio in Magnetic Tunnel Junction (MTJ) devices. With these results, it is observed that cobalt-based MTJ devices (that is Co-MgO-Fe and CoFe-MgO-CoFe) exhibit higher TMR ratio as compared to Nickel- and Iron-based MTJ devices (that is NiFe-MgO-NiFe and Ni-MgO-Fe). As Cobalt has a high spin polarization this property makes it suitable for use in spintronics devices like MTJs, where the manipulation of electron spins is essential for data storage and information processing. These findings can be employed to improve the performance characteristics of the MTJ-based Random Access Memory (MRAM) in the field of spintronics.

A neuromorphic radial-basis-function net using magnetic bits for time series prediction

Magnetic tunnel junctions (MTJs) are considered strong candidates for constructing neuromorphic systems owing to their low power consumption and high integrability. However, research on MTJ-based local approximation network is still lacking. In this work, we propose an MTJ-based radial basis function (RBF) network and numerically investigate its time-series prediction capability. The results demonstrate that the MTJ-based RBF network can enhance its prediction performance by utilizing increased environmental temperatures, achieving performance better than traditional software artificial neural networks.

Magnetic injection of α-CP nanoribbons and investigation of spintronic device applications of magnetic α-CP nanoribbons based on first principles calculations

Since the successful synthesis of α-phosphorus carbide (α-CP) using carbon doping technology, α-CP has exhibited excellent carrier mobility and anisotropy at room temperature, underscoring its potential for spintronic applications. The application of CP in spintronic devices is limited due to its lack of magnetism. Effective magnetic injection in non-magnetic semiconductors can typically be achieved by doping with magnetic atoms. In this study, we calculated the electromagnetic properties of transition metal (TM) atoms adsorbed at different positions on α-CP using first principles. Notably, we found that α-CP nanoribbons adsorbed with Fe and Mn atoms of a specific width exhibit stable half-metallicity. We discovered that α-CP nanoribbons adsorbed with Fe and Mn atoms of a specific width exhibit stable half-metal properties and design magnetic tunnel junctions with half-metallic Fe_H12 and Mn_H12 adsorption structures. The results show that Mn_H12 and Fe_H12 devices exhibit a highly efficient spin filtering effect, with a TMR as high as 5521%. These findings provide theoretical guidance for the application of CP-based spintronic devices.

Coherent Driving of a Single Nitrogen Vacancy Center by a Resonant Magnetic Tunnel Junction.

Nitrogen vacancy (NV) centers, atomic spin defects in diamond, represent an active contender for advancing transformative quantum information science (QIS) and innovations. One of the major challenges for designing NV-based hybrid systems for QIS applications results from the difficulty of realizing local control of individual NV spin qubits in a scalable and energy-efficient way. To address this bottleneck, we introduce magnetic tunnel junction (MTJ) devices to establish coherent driving of an NV center by a resonant MTJ with voltage controlled magnetic anisotropy. We show that the oscillating magnetic stray field produced by a resonant micromagnet can be utilized to effectively modify and drive NV spin rotations when the NV frequency matches the corresponding resonance conditions of the MTJ. Our results present a new pathway to achieve all-electric control of an NV spin qubit with reduced power consumption and improved solid-state scalability for implementing cutting-edge QIS technological applications.

Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory

ABSTRACT A body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is utilized as a barrier material of p-MTJs. Since the p-MTJ is a key device of current spintronics memory, i.e. spin-transfer-torque magnetoresistive random access memory (STT-MRAM), it attracts attention for further advance to explore new magnetic materials showing both large PMA as well as TMR. However, there have been no such materials other than FeCo(B)/MgO. Here, we report, for the first time, PMA in metastable bcc Co based alloy, i.e. bcc CoMnFe thin films which are known to exhibit large TMR effect when used for electrodes of MTJs with the MgO barrier. The largest intrinsic PMA’s were about 0.6 and 0.8 MJ/m3 in a few nm thick CoMnFe alloy film and multilayer film, respectively. Our ab-initio calculation suggested that PMA originates from tetragonal strain and the value exceeds 1 MJ/m3 with optimizing strain and alloys composition. The simulation of the thermal stability factor indicates that the magnetic properties obtained satisfy the requirement of the data retention performance of X-1X nm STT-MRAM. The large PMA and high TMR effect in bcc CoMnFe/MgO, which were rarely observed in materials other than FeCo(B)/MgO, indicate that bcc CoMnFe/MgO is one of the potential candidates of the materials for X - 1X nm STT-MRAM.

Giant tunneling magnetoresistance in insulated altermagnet/ferromagnet junctions induced by spin-dependent tunneling effect

Giant tunneling magnetoresistance in insulated altermagnet/ferromagnet junctions induced by spin-dependent tunneling effect

Dependence of interfacial mixing for thermally induced magnetization switching in Gd/Fe multilayers

The use of femtosecond laser pulses for ultrafast triggering of magnetization switching is of great interest in multilayer systems with great tunability. At present, the impact of interfacial mixing on magnetization switching has not been thoroughly investigated. In this paper, the impact of interfacial mixing on magnetization dynamics in multilayer systems is investigated by a combination of atomic spin dynamics and two-temperature models. Our results show that interfacial mixing in multilayer systems not only reduces the energy density required for magnetization switching but also expands the range of pulse durations that can trigger magnetization switching. In addition, we have investigated the dependence of the switching time on the interfacial mixing in multilayer systems. The results show that interfacial mixing can accelerate the process of magnetization dynamics, thus providing a theoretical basis for the design of faster speed optically controlled magnetic tunnel junctions.

Temperature Compensation Method for Tunnel Magnetoresistance Micro-Magnetic Sensors Through Reference Magnetic Field.

The sensitivity of Tunnel Magnetoresistance (TMR) sensors is characterized by significant temperature drift and poor sensitivity drift repeatability, which severely impairs measurement accuracy. Conventional temperature compensation techniques are often hindered by low compensation precision, inadequate real-time performance, and an inability to effectively address the issue of poor repeatability in temperature drift characteristics. To overcome these challenges, this paper introduces a novel method for suppressing temperature drift in TMR sensors. In this method, an alternating reference magnetic field is applied to TMR sensors, and the output amplitude at the frequency of the reference magnetic field is calculated to compensate the sensitivity temperature drift in real time. Temperature characteristic tests were conducted in a non-magnetic temperature test chamber, and the results revealed that the proposed method significantly reduced the TMR sensitivity drift coefficient from 985.39 ppm/°C to 59.08 ppm/°C. Additionally, the repeatability of sensitivity temperature characteristic curves was enhanced, with a reduction in root mean square error from 0.84 to 0.21. This approach effectively mitigates temperature-induced sensitivity drift without necessitating the use of a temperature sensor, and has the advantages of real-time performance and repeatability, providing a new approach for the high-precision temperature drift suppression of TMR.

Interface defect state induced spin injection in organic magnetic tunnel junctions

This article analytically explores defect assisted spin injection in organic magnetic tunnel junctions (MTJs) [x/rubrene/Co, x = La2O3, LaMnO3, La0.7Ca0.3MnO3 (LCMO), La0.7Sr0.3MnO3 (LSMO)] employing nonequilibrium Green’s function (NEGF). Spin precession at ferromagnet (FM)/organic semiconductor (OSC) interface defect states have been considered while modeling the MTJ devices. Variations in voltage dependent parallel (RP) and antiparallel (RAP) resistances have been attributed to modified spin dependent scattering at modified spin resolved density of states of magnetic electrodes. Moreover, change in distribution of defect state depths at a spin injection interface has also been observed to modify RP/RAP, and hence, tunnel magnetoresistance (TMR) across the devices. Localization of defect state distribution due to a high spin split band may have resulted in large TMR for La2O3 devices. Nonlinear spin transfer torque (STT) in devices other than LSMO indicates compensation of spin damping, resulting in a high TMR response across the devices. Hence, the localization of defect state distribution and the choice of magnetic electrodes with high spin split bands may be exercised to realize spintronic devices for low power spin memory applications.

Design of spintronic devices based on adjustable half-metallicity induced by electric field in A-type antiferromagnetic bilayer NiI2

Exploring the attainment of half-metallic behavior in two-dimensional (2D) materials through external perturbations is a popular area of current research. In this work, we demonstrate, using first-principles calculations, that bilayer NiI2 (bi-NiI2) is an A-type antiferromagnetic (AFM) semiconductor with an indirect bandgap of 0.86 eV, with the most stable configuration being the AB stacking mode. Upon the application of a vertical electric field, the material transforms from its original semiconducting state into a half-metallic state. Moreover, the spin polarization reverses its orientation whenever the direction of the electric field is altered. This intriguing behavior has inspired us to design a spintronic device based on the A-type AFM bi-NiI2. By employing nonequilibrium Green's function (NEGF) combined with density functional theory (DFT) calculations, we find that the device achieves ON/OFF switching by applying vertical electric fields in parallel or anti-parallel configurations in the two leads. The device displays 100 % spin polarization in the parallel configuration (PC) scenario, driven by bias voltage or temperature differences. Utilizing either the parallel or antiparallel configuration (APC) for ON/OFF switching enables the device to exhibit tunneling magnetoresistance (TMR) of up to 1.45 × 1010 % due to bias voltage and up to 1011 % thermal TMR arising from temperature differences between the leads. These findings highlight the potential of NiI2 and A-type AFM bilayers in the design of spintronic devices.

Monitoring of crack-induced electromagnetic vector field based on tunnel magnetoresistance effect

Electromagnetic radiation technology is widely used as a non-destructive, non-contact monitoring method, but the spatial information contained in it is ignored. A three-axis electromagnetic sensor was developed to monitor the electromagnetic radiation generated by the fracture of brittle rocks based on the tunnel magnetoresistance effect. The sensor has significant independence, anti-interference in three orthogonal directions, and exhibits high linearity. The monitored signals can be regarded as the components of the electromagnetic field vector in three directions. Based on the idea of vector synthesis, the peak index and peak matching index of the synthesized signal are extracted for the directional characterization and can be used to identify the direction of cracks.

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

With the advancement of technology nodes, the challenging space radiation environment poses a significant threat to memory reliability. Spin transfer torque magnetic random access memory (STT-MRAM) is a formidable candidate for non-volatile memory for space applications due to its advantages of non-volatility, durability, speed and compatibility with CMOS technology. Although the STT-MRAM memory unit magnetic tunnel junction (MTJ) is naturally immune to radiation effects, the single event upset (SEU) affects the peripheral circuitry. A radiation-hardened circuit is proposed, which theoretically does not have ‘0' upset nodes and automatically recovers from ‘1' upset. Moreover, the circuit's radiation-hardened performance was corroborated through hybrid simulation utilizing 40-nm technology. The findings of this investigation hold significance for the use of space radiation-hardened STT-MRAM.

Co-optimizing of H-curing, stress, and thermal annealing—A more effective way for realizing FEOL-BEOL compatible eMRAM chip

Metallization, plasma, and thermal annealing used in magneto-resistive random access memory integration differs significantly from traditional interconnection processes, usually resulting in the device performance deterioration of metal-oxide-silicon field-effect transistors. Commonly used methods, such as hydrogen postalloying, may not be effective to recover performance when magneto-resistive random access memory is integrated. The study focused on the interplay between hydrogen content in the dielectric films, wafer configuration induced by film stress, and thermal annealing during the chip fabrication process. Post-thermal annealing can enhance the release of hydrogen from the dielectric films, which can repair the silicon–hydrogen bond breakage resulting from magneto-resistive random access memory integration. However, this process can also worsen wafer bowing in an undesired direction which is detrimental to the performance of metal-oxide-silicon field-effect transistors. Consequently, utilizing silicon nitride with specific hydrogen content, in conjunction with post-thermal annealing, can improve effectively both p-type and n-type metal-oxide-silicon field-effect transistors. This approach holds significant potential for application in more advanced technological nodes since it is compatible with traditional process and does not require more advanced fabrication equipment. Additionally, the resulting embedded magneto-resistive random access memory chips maintain competitive magnetic tunneling junction reliability in term of endurance and reflow resistivity.

Single-molecule Magnets (SMM) spin channels connecting FeMn antiferromagnet and NiFe ferromagnetic electrodes of a tunnel junction

The integration of single-molecule magnets (SMMs) into magnetic tunnel junctions (MTJs) offers significant potential for advancing molecular spintronics, particularly for next-generation memory devices, quantum computing, and energy storage technologies such as solar cells. In this study, we present the first demonstration of SMM-induced spin-dependent properties in an antiferromagnet-based MTJ molecular spintronic device (MTJMSD). We engineered cross-junction-shaped devices comprising FeMn/AlOx/NiFe MTJs. The AlOx barrier thickness where the exposed junction edges meet was comparable to the SMM length, facilitating the incorporation of SMM molecules as spin channels for spin-dependent transport. The SMM channels enabled long-range magnetic moment ordering around molecular junctions, which were precisely engineered via fabrication processes. The SMM, composed of a [Mn6(μ3-O)2(H2N-sao)6(6-atha)2(EtOH)6] (H2N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate) complex, featured thioester groups at the ends that upon hydrolysis they form bonds with the magnetic electrodes. SMM-treated junctions demonstrated a significant current enhancement, reaching up to 7 μA at an input voltage of 60 mV. Furthermore, SMM-doped junctions exhibited current stabilization in the μA range at lower temperatures, whereas the bare electrodes showed current suppression to the picoampere range. Magnetization measurements conducted at 55 K and 300 K on pillar-shaped devices revealed a reduction in magnetic moment at low temperatures. Additionally, Kelvin probe atomic force microscopy (KPAFM) measurements confirmed that SMM integration transformed the electronic properties over long ranges.These findings are attributed to the spin channels formed between magnetic metal electrodes, which enhance spin polarization at each magnetic electrode. Our research highlights the potential of using antiferromagnetic materials, characterized by minimal stray fields and zero net magnetization, to transform MTJMSD devices.

Investigations on full-Heusler alloys Mn2TaAl and Mn2WAl for spintronic and thermoelectric applications

Half-metallic materials are widely used as spintronic devices such as electrodes, magnetic tunnelling junction and giant magnetoresistance etc. In this work, we have systematically investigated the structural stability, Gilbert damping, electronic structure and magnetism together with exchange interactions and Curie temperatures for Mn2TaAl and Mn2WAl alloys. Initially, we estimate their structural stability and offer possible phase synthesis. Subsequently, the Gilbert damping parameters calculated by the linear response theory are used to assess their response speed as spintronic materials. Furthermore, the Mn2TaAl and Mn2WAl are predicted to be half-metallic and nearly half-metallic ferrimagnets, their total magnetic moments obey the Mt=Zt-18 rule. Accordingly, their Curie temperatures for Mn2TaAl and Mn2WAl are also evaluated by the mean-field approximation. Finally, their thermodynamic parameters within 0∼600 K and thermoelectric properties within 200∼900 K are discussed. Overall, our research for Mn2TaAl and Mn2WAl alloys might provide some valuable clues for their application in spintronic devices.

Microwave artificial neurons based on magnetic tunnel junction nano-oscillators for image recognition and denoising

We report a microwave artificial neuron based on magnetic tunnel junction spin torque nano-oscillator (STNO). Based on STNO neurons, the three-layer full connected artificial neural network (ANN) are constructed to recognize handwritten digit with a produced accuracy of up to 90.95%. To address noise inherent in real circuits leads to poor recognition accuracy, we harness the frequency mutation characteristics of the STNO output near the critical threshold current for denoising handwritten digits corrupted by noise. Before and after denoising using the aforementioned ANN, the recognition accuracy is improved from 55.98% to 88.76%.