Magnetic Tunnel Junction Structure Research Articles

Optimization of Magnetic Tunnel Junction Structure through Component Analysis and Deposition Parameters Adjustment

Optimization of Magnetic Tunnel Junction Structure through Component Analysis and Deposition Parameters Adjustment

First-principle study of CrO2-BNNT-CrO2 based MTJ device using EHTB model and its application in a MRAM circuit

In this work we investigated the performance of Single-Walled Boron Nitride Nanotube (SWBNNT) sandwiched between CrO2 based Magnetic Tunnel Junction (MTJ) structures with atomistic simulations. MTJ based device-level simulation was performed using the Extended Huckel based Tight Binding (EHTB) model. The SWBNNT as a dielectric layer and CrO2 as Ferromagnetic (FM) layers based Magnetic Tunnel Junction (MTJ) heterostructure was computed. The proposed MTJ device operates at the nano-Ampere (nA) range depicting its potential application in a low-powered nanoelectronics device. It also shows a promising Tunnel Magnetoresistance (TMR) effect. The practical circuit-level implementation of the proposed MTJ device in Magnetic Random-Access Memory (MRAM) was validated using LTspice. Hence, the calculated static power consumption and writing energy per bit was minimal for S1 and S2 based MRAM circuit. The perfect switching operation was depicted by the proposed MTJ device based MRAM.

Intermixing of iron and cobalt with oxygen-rich magnesium oxide in CoFeB/MgO/CoFeB magnetic tunneling junctions

Atomic-scale spectroscopic imaging of sputtered magnetic tunnel junction structures with a thick oxygen-rich MgO barrier reveals the diffusion of iron and cobalt into the MgO barrier from CoFeB electrodes. First principles calculations are performed to (1) confirm that Fe diffusion through Mg vacancies is energetically favorable, (2) quantify the reduction of interfacial perpendicular magnetic anisotropy due to Fe diffusion into MgO, and (3) predict that the presence of Fe impurities in MgO causes an increased leakage and a tunneling magnetoresistance decrease. Through the chemical shift of the Fe L3 edge and the peak ratio Fe L3/Fe L2 measured by electron energy loss spectroscopy, we suggest that, within MgO, iron with mixed oxidation state Fe2+ and Fe3+ or higher is found in the as-grown structure, which is reduced by annealing to Fe2+. These results indicate that the stoichiometry of as-deposited MgO barrier layers plays an important role in controlling the microstructure and optimizing the performance of magnetic tunnel junctions.

Field-free spin–orbit torque switching of magnetic tunnel junction structure based on two-dimensional van der Waals WTe2

In recent years, two-dimensional van der Waals (2D vdWs) heterostructures have attracted great research interest due to their great potential in fundamental physics research and spintronic devices (such as MTJs). Due to its excellent scalability, controllable magnetism and out-of-plane anisotropy, the compact nonvolatile memory controller (NV-MC) based on spintronics is expected to solve the memory bottle-neck problem. At present, a series of in-depth studies have been conducted on advanced 2D vdWs materials, such as MoS2, WSe2, and Fe3GeTe2 (FGT). The results show that the 2D vdWs materials have great TMR value and high SOT switching efficiency, both theoretically reported and experimentally verified. In the paper, a novel MTJ device based on the FGT/WTe2 heterostructure is proposed. In the absence of an external magnetic field, the magnetization direction of the MTJ free layer can still be reversed with certainty when the unipolar write current reaches about 5 mA. Moreover, the DMI effect generated between 2-D material/FM interfaces is also considered, which can promote the performance of SOT-MTJ without the external field. The reading reliability of SOT-MRAM is improved in comparison with the traditional CoFeB-based MTJ device.

Fabrication and performance enhancement of TMR-Superconducting composite magnetic sensors for weak magnetic field detection

The tunneling magnetoresistance (TMR) effect, utilizing the CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) structure, has seen a surge in research interest owing to its pronounced sensitivity to magnetic fields. However, advancements in TMR technology have plateaued in recent times. In response, this study explores the integration of TMR with superconductivity to form a TMR-superconducting composite magnetic sensor, aiming to amplify the external magnetic field effect and improve sensor performance. Such sensors offer significant promise for applications in detecting feeble magnetic fields due to their compact dimensions, minimal energy consumption, and exceptional magnetic field resolution. Despite their potential, manufacturing challenges persist. This paper focuses on the meticulous fabrication of the TMR's critical thin film layer and its subsequent patterning. Moreover, we propose an innovative technique utilizing magnetron sputtering to deposit a niobium (Nb) layer atop the TMR structure, followed by intricate patterning to successfully construct a TMR-superconducting composite film. This novel approach importantly diminishes the interspace between TMR and superconducting layers compared to traditional bonding methods, thereby enhancing device performance. Experimental assessments of the device constructed superconducting loops, contrasted with traditional bonding process, demonstrate that sputtering-based sensor exhibit better magnetic field resolution. Consequently, TMR-superconducting composite sensors realized via the sputtering technique hold distinct advantages in weak magnetic field detection.

Size dependence of domain wall mediated switching dynamics of perpendicular magnetic tunnel junctions in the presence of reference layer stray field

Recent investigations on spin-transfer-torque-induced switching dynamics of perpendicular magnetic tunnel junctions (MTJ) have revealed different switching anomalies. Here, the influence of stray field from a synthetic anti-ferromagnet (SAF) based reference layer on the domain wall (DW) mediated switching of the free-layer magnet is studied via finite temperature micro-magnetic simulations for varying MTJ diameters. For larger diameters (∼80 – 120 nm), a stray field gives rise to persistent back-and-forth oscillation of the unswitched domain, delaying the switching process and causing increased write errors. For smaller diameters (∼30 – 56 nm), quasi-coherent switching occurs, as expected. For the intermediate ranges of MTJ diameters (∼60 – 70 nm), another switching mode emerges where a bubble-like feature is observed to evolve during the switching process, causing a very rapid change in magnetization. These paths are observed to originate from DWs partly in Bloch and partly in Néel configuration. We find that at the intermediate ranges of device size, the stray field becomes stronger for a given SAF configuration, and the energy difference between the Néel and Bloch configurations is also lowered. Hence, a stronger stray field could easily distort the DW propagation in the Walker breakdown regime, leading to such magnetization behavior. Our findings present interesting insights into DW-mediated switching modes in perpendicular MTJ structures caused by unoptimized stray fields from the SAF.

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions.

Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short- and long-term memory, nonlinear fast response, and relatively small footprint. Here we demonstrate experimentally how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions can emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device. The field-free operation of this two-terminal device and its robustness against an externally applied magnetic field make it a suitable candidate to mimic the neuron response in a dense neural network. The small energy consumption of the device (4-16 pJ/spike) and its scalability are important benefits for embedded applications. This compact perpendicular magnetic tunnel junction structure could finally bring spiking neural networks to sub-100 nm size elements.

Investigation of Field-Free Switching of 2-D Material-Based Spin–Orbit Torque Magnetic Tunnel Junction

Spin Hall-assisted magnetization switching in a three-terminal magnetic tunnel junction (MTJ) has attracted much attention due to its high-speed magnetization switching, which enables low-power memory and logic applications. In this study, 2-D materials with high spin–orbit coupling (SOC) effects and high charge-to-spin conversion efficiency are used to assess the performance characteristics of spin–orbit torque MTJ (SOT-MTJ). External field-free switching in SOT-MTJ is accomplished by employing a standard MTJ structure with a bias magnetic layer on top of the structure that projects a dipolar magnetic field onto a free layer (FL). In addition, the Dzyaloshinskii–Moriya interaction (DMI), an asymmetric exchange interaction, is considered while evaluating the critical current density. We were able to demonstrate that the required critical current density decreases by 99.5%, while the switching speed increases by 86.67% in the proposed external field-free 2-D material-based SOT-MTJ. We have also shown the significance of DMI in the field-free switching of the magnetization without the requirement for additional mechanisms when the device shrank down to the subnanometer regime.

Influence of magnetic structure on the performance of twisted skyrmion-based nano-oscillator

The spin torque nano-oscillator (STNO), a nanosize microwave signal generator, have caught the attention of a number of researchers due to its obvious advantages. Recently a chiral bulk material with twisted skyrmion has been discovered in studies with different helicity degrees. In this work, we design a new STNO based on twisted skyrmion existing in free layers of magnetic tunnel junction structure. We first investigate the effect of the magnetic moment of fixed layer on the twisted skyrmion and frequency of STNO. Although the magnetic moment of fixed layer does not affect the state of the twisted skyrmion but affects the precession frequency of STNO. Later, the current, external magnetic field and Dzyaloshinskii–Moriya interaction strength are changed to regulate the oscillation frequency of STNO. Our result may be favorable for the design of new twisted skyrmion-based STNO.

Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory

Magnetic tunnel junction (MTJ)-based memory devices have larger switching delay and energy consumption, compared to cache or dynamic random access memory. In order to broaden the applications of the magnetoresistive random access memory, reducing the switching time and energy consumption of the MTJ is required. Here, a novel lateral double MTJ with an orthogonal polarizer is proposed. The proposed device consists of three ferromagnetic regions: the first pinned region (PR1) with perpendicular magnetic anisotropy (PMA), a free region (FR) with PMA, and the second pinned region (PR2) with in-plane magnetic anisotropy (IMA). PR1 and PR2 are placed on top of the oxide barrier, which separates them from the FR, comprising a lateral double MTJ structure. The current pulse through PR2 helps to perturb the magnetization of the FR. Since the angle between PR2 and FR is 90°, the initial torque increases significantly, decreasing switching delay by 4.02 times and energy-delay product by 7.23 times. It is also shown, that the area of the access transistor can be reduced by approximately 10%, while maintaining the same energy-delay product and reducing gate RC delay.

Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions

Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance computing applications, due to its lower power consumption, higher bit density, and the ability to reduce the access transistor size when compared to conventional current-controlled spin-transfer torque MRAM. The key to realizing these advantages is to have a low MTJ switching voltage. Here, we report a perpendicular MTJ structure with a high voltage-controlled magnetic anisotropy coefficient ~130 fJ/Vm and high tunnel magnetoresistance exceeding 150%. Owing to the high voltage-controlled magnetic anisotropy coefficient, we demonstrate sub-nanosecond precessional switching of nanoscale MTJs with diameters of 50 and 70 nm, using a voltage lower than 1 V. We also show scaling of this switching mechanism down to 30 nm MTJs, with voltages close to 2 V. The results pave the path for the future development and application of voltage-controlled MRAMs and spintronic devices in emerging computing systems.

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of magnetisation dynamics induced by combination of spin orbit torque (SOT) and spin transfer torque (STT). Within the model the effect of SOT is introduced as a Slonczewski formalism, whereas the effect of STT is included via a spin accumulation model. We investigate a system of CoFeB/MgO/CoFeB coupled with a heavy metal layer where the charge current is injected into the plane of the heavy metal meanwhile the other charge current flows perpendicular into the MTJ structure. Our results reveal that SOT can assist the precessional switching induced by spin polarised current within a certain range of injected current densities yielding an efficient and fast reversal on the sub-nanosecond timescale. The combination of STT and SOT gives a promising pathway to improve high performance CoFeB-based devices with high speed and low power consumption.

Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures

Magnetic skyrmions in heavy metal (HM)/CoFeB/MgO structures are of particular interest for skyrmion-based magnetic tunnel junction (MTJ) devices because of their reliable generation, stability, and readout through purely electrical methods. To optimize the properties, such as stability, a strong Dzyaloshinskii-Moriya interaction (DMI) is required at room temperature. Here, using first-principles calculations, we demonstrate that huge DMI can be obtained in Ir/CoFe structures with an Fe-terminated configuration. Moreover, Brillouin light-scattering measurements show that indeed Ta/Ir/Co 20 Fe 60 B 20 /MgO thin films with perpendicular magnetic anisotropy exhibit a large DMI value (1.13 mJ/m 2 ) when the thickness of the CoFeB layer is 1.1 nm, which can be attributed to the smooth and Fe-rich interface between Ir and CoFeB layers. Furthermore, we observe stable sub-100 nm magnetic skyrmions at room temperature in the Ir/CoFeB/MgO systems by magnetic force microscope. This work paves the way for promoting the application of skyrmions in CoFeB/MgO-based perpendicular anisotropy MTJ structures. Large DMI in Ir/CoFeB/MgO thin films with perpendicular magnetic anisotropy First-principles calculations combined with Brillouin light-scattering methods Significant role of interfacial configuration on the regulation of DMI Sub-100 nm room-temperature magnetic skyrmions in Ir/CoFeB/MgO multilayers Chen et al. observe a large Dzyaloshinskii-Moriya interaction, combined with the evidence of sub-100-nm room-temperature skyrmions in Ir/CoFeB/MgO structures. This material stack may provide a platform to realize skyrmionics, especially the nucleation and electrical detection of skyrmions in perpendicular anisotropy-based magnetic tunnel junctions.

A thermodynamic core using voltage-controlled spin–orbit-torque magnetic tunnel junctions

We present a magnetic implementation of a thermodynamic computing fabric. Magnetic devices within computing cores harness thermodynamics through its voltage-controlled thermal stability; while the evolution of network states is guided by the spin–orbit-torque effect. We theoretically derive the dynamics of the cores and show that the computing fabric can successfully compute ground states of a Boltzmann Machine. Subsequently, we demonstrate the physical realization of these devices based on a CoFeB−MgO magnetic tunnel junction structure. The results of this work pave the path towards the realization of highly efficient, high-performance thermodynamic computing hardware. Finally, this paper will also give a perspective of computing beyond thermodynamic computing.

Giant Dzyaloshinskii-Moriya Interaction and Room-Temperature Nanoscale Skyrmions in CoFeB/MgO Heterostructures

Magnetic skyrmions in heavy metal (HM)/CoFeB/MgO structures are of particular interest for skyrmion-based magnetic tunnel junction (MTJ) devices because of their reliable generation, stability and read-out through purely electrical methods. To optimize the properties, such as stability, a strong Dzyaloshinskii-Moriya interaction (DMI) is required at room temperature. Here, using first-principles calculations, we demonstrate that giant DMI can be obtained in Ir/CoFe structures with an Fe-terminated configuration. Moreover, Brillouin light scattering measurements show that indeed Ta/Ir/Co20Fe60B20/MgO thin films with perpendicular magnetic anisotropy exhibit a large DMI value (1.13 mJ/m2), which can be attributed to the smooth and Fe-rich interface between Ir and CoFeB layers. Furthermore, we observe stable sub-100 nm magnetic skyrmions at room temperature in Ir/CoFeB/MgO systems by magnetic force microscope. This work paves the way for promoting the application of skyrmions in CoFeB/MgO-based perpendicular anisotropy MTJ structures.

Optimization of asymmetric reference structures through non-evenly layered synthetic antiferromagnet for full bridge magnetic sensors based on CoFeB/MgO/CoFeB

Industrial sensor applications rely on the implementation of full Wheatstone bridge architectures, demanding the development of low-cost and mass production methods of magnetic tunnel junctions (MTJ) based on CoFeB/MgO/CoFeB. In particular, monolithic bridge microfabrication has been demonstrated through the double deposition of MTJ stacks engineered by asymmetric reference layers with non-evenly layered synthetic antiferromagnet (SAF) structures. However, extending the standard double magnetic layered SAF into a triple magnetic multilayer system brings critical changes in the overall performance of the reference structure, which directly influences the magnetic stability of the device. Consequently, a theoretical model of a triple magnetic layered AF/SAF structure was developed to support the understanding of the magnetic response of the reference layers, aiming to improve the magnetic stability around zero field. A full MTJ Wheatstone bridge incorporating the optimized double and triple reference structures was microfabricated with a linear and hysteresis-free response. Furthermore, a high thermal endurance of both structures was verified through the measurement of the magnetotransport behavior of each type of MTJ structure within a reversible magnetic field range of ±2 kOe and a temperature sweep from room temperature up to 200 °C.

Field-Free Spin-Orbit Torque Switching in Magnetic Tunnel Junction Structures With Stray Fields

Spin-orbit torque (SOT) offers ultrafast magnetic switching in the subnanosecond regime for magnetoresistive random-access memory (MRAM) as an alternative to future cache memories. However, one main obstacle to the development of perpendicular SOT-MRAM is that a small in-plane external field is required to achieve deterministic magnetization switching. Here we eliminate the external magnetic field for deterministic SOT switching by utilizing the stray field in a magnetic tunnel junction (MTJ) structure. The MTJ consists of a perpendicularly magnetized CoFeB free layer and an in-plane magnetized reference layer that provides a stray field. Unlike usual SOT switching in a single ferromagnet, four switching phases as well as unique critical switching current dependence on the applied in-plane magnetic fields have been observed. This letter demonstrates the effectiveness of stray-field assisted field-free SOT switching in MTJ structures that may extend to eliminate the main obstacle of SOT-MRAM in practical applications.

Anatomy of Magnetic Anisotropy and Voltage-Controlled Magnetic Anisotropy in Metal Oxide Heterostructure from First Principles

Voltage control of magnetic anisotropy (VCMA) is one of the promising approaches for magnetoelectric control of magnetic tunnel junction (MTJ). Here, we systematically calculated the magnetic anisotropy (MA) and the VCMA energies in the well-known MTJ structure consisting of Fe/MgO interface with Cr buffer layer. In this calculation, we investigated an alloying between Fe and Cr and a strain effect. We used a spin density functional approach which includes both contributions from magnetocrystalline anisotropy energy (MCAE) originating from spin–orbit coupling and shape magnetic anisotropy energy from spin dipole–dipole interaction. In the present approach, the MCAE part, in addition to a common scheme of total energy, was evaluated using a grand canonical force theorem scheme. In the latter scheme, atom-resolved and k-resolved analyses for MA and VCMA can be performed. At first, we found that, as the alloying is introduced, the perpendicular MCAE increases by a factor of two. Next, as the strain is introduced, we found that the MCAE increases with increasing compressive strain with the maximum value of 2.2 mJ/m2. For the VCMA coefficient, as the compressive strain increases, the sign becomes negative and the absolute value becomes enhanced to the number of 170 fJ/Vm. By using the atom-resolved and k-resolved analyses, we clarified that these enhancements of MCAE and VCMA mainly originates from the Fe interface with MgO (Fe1) and are located at certain lines in the two dimensional Brillouin zone. The findings on MCAE and VCMA are fully explained by the spin-orbit couplings between the certain d-orbital states in the second-order perturbation theory.

Effect of an interfacial oxygen monolayer on the spin-polarization at the Fe/MgO interface: First-principles calculations

Density functional theory is applied to calculate the structural, electronic, and magnetic properties of the Fe/MgO/Fe (001) magnetic tunnel junctions (MTJs) as well as the influence of an interfacial oxygen monolayer by the addition of oxygen atoms at the Fe/MgO interface. The formation of Fe–O bonded atoms, as well as the changes in the spin polarization around the Fermi level of the Fe/MgO/Fe (001) with an interfacial FeO layer, is observed. The calculated spin-polarized density of states of the Fe/MgO/Fe with a Fe–O interface layer showed that the peaks of the O 2s, O 2p, and Fe 3d states are shifted due to the coupling between the O atoms and Fe layer. The Fe/MgO/Fe structure exhibits metallic behavior due to the position of the density of states (DOS) peak at the Fermi level with both majority and minority spins. The calculated spin polarization (P) is only 7% for the metallic Fe/MgO/Fe structure, whereas the metallic Fe/MgO/Fe structure with FeO interfacial layer has P of 24%. Thus, the polarization is found to be extremely sensitive to the nature of the interface layer. Likewise, the nature of spin-charge transfer in both investigated MTJ structures was found to be different at the Fe/MgO interface due to the hybridization interaction between Fe and O. We have also calculated the structural, magnetic, and electronic properties of Fe/MgO/Fe with FeO layer with different sizes of the junction by varying the number of MgO layers, with Fe thickness fixed at 5 ML.

High-Frequency Microwave Emission of a Trilayer Magnetic Tunnel Junction in the Absence of External Magnetic Bias Field

We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ containing a perpendicular free layer and an in-plane fixed layer, a second perpendicular layer has been introduced. We found that the microwave emission frequency induced by spin-transfer torque (STT) can reach as high as 6 GHz in the absence of any applied magnetic field. Moreover, microwave emission is observed for both current polarizations where a redshift is seen with increase in magnitude of current. We discuss spin-dynamics of the observed bi-directional high-frequency emission and the physical origin of the red-shift. The distinct microwave emission properties exhibited in this tri-layer MTJ structure could potentially be useful for future applications in nanoscale spintronics devices such as microwave communication and neuromorphic computing.