Investigation of Field-Free Switching of 2-D Material-Based Spin–Orbit Torque Magnetic Tunnel Junction

Abstract

Spin Hall-assisted magnetization switching in a three-terminal magnetic tunnel junction (MTJ) has attracted much attention due to its high-speed magnetization switching, which enables low-power memory and logic applications. In this study, 2-D materials with high spin–orbit coupling (SOC) effects and high charge-to-spin conversion efficiency are used to assess the performance characteristics of spin–orbit torque MTJ (SOT-MTJ). External field-free switching in SOT-MTJ is accomplished by employing a standard MTJ structure with a bias magnetic layer on top of the structure that projects a dipolar magnetic field onto a free layer (FL). In addition, the Dzyaloshinskii–Moriya interaction (DMI), an asymmetric exchange interaction, is considered while evaluating the critical current density. We were able to demonstrate that the required critical current density decreases by 99.5%, while the switching speed increases by 86.67% in the proposed external field-free 2-D material-based SOT-MTJ. We have also shown the significance of DMI in the field-free switching of the magnetization without the requirement for additional mechanisms when the device shrank down to the subnanometer regime.