Magnetization Switching Research Articles

Proton-Induced Reversible Spin-State Switching in Octanuclear FeIII Spin-Crossover Metal-Organic Cages.

Responsive spin-crossover (SCO) metal-organic cages (MOCs) are emerging dynamic platforms with potential for advanced applications in magnetic sensing and molecular switching. Among these, FeIII-based MOCs are particularly noteworthy for their air stability, yet they remain largely unexplored. Herein, we report the synthesis of two novel FeIII MOCs using a bis-bidentate ligand approach, which exhibit SCO activity above room temperature. These represent the first SCO-active FeIII cages and feature an atypical {FeN6}-type coordination sphere, uncommon for FeIII SCO compounds. Our study reveals that these MOCs are sensitive to acid/base variations, enabling reversible magnetic switching in solution. The presence of multiple active proton sites within these SCO-MOCs facilitates multisite, multilevel proton-induced spin-state modulation. This behavior is observed at room temperature through 1H NMR spectroscopy, capturing the subtle proton-induced spin-state transitions triggered by pH changes. Further insights from extended X-ray absorption fine structure (EXAFS) and theoretical analyses indicate that these magnetic alterations primarily result from the protonation and deprotonation processes at the NH active sites on the ligands. These processes induce changes in the secondary coordination sphere, thereby modulating the magnetic properties of the cages. The capability of these FeIII MOCs to integrate magnetic responses with environmental stimuli underscores their potential as finely tunable magnetic sensors and highlights their versatility as molecular switches. This work paves the way for the development of SCO-active materials with tailored properties for applications in sensing and molecular switching.

Effect of monolayer ratio on single-shot all-optical switching in Gd/Fe multilayers

Ultrafast thermally induced magnetization switching (TIMS) with femtosecond lasers has attracted much attention due to its ability to trigger a single switching on the picosecond time scale. Currently, most of the studies on TIMS have focused on various ferrimagnetic alloys. In this paper, TIMS of Gd/Fe multilayers in different monolayer ratios is investigated by atomic spin dynamics. The results show that an increase in the monolayer Gd ratio narrows the energy density window of the switching. Further studies found that a lower damping ratio decreases the laser energy density threshold for magnetization reversal. Moreover, reducing the ratio of Gd in the monolayer at the appropriate energy density can shorten the duration of the transient ferromagnetic-like state, which can lead to faster realization of TIMS. Our simulation results provide new insights to explore the physical mechanism of TIMS in Gd/Fe multilayers.

An energy efficient way for quantitative magnetization switching

Recent advancements in electrically controlled spin devices have been made possible through the use of multiferroic systems comprising ferroelectric (FE) and ferromagnetic (FM) materials. This progress provides a promising avenue for developing energy-efficient devices that allow for electrically controlled magnetization switching. In this study, we fabricated spin orbit torque (SOT) devices using multiferroic composites and examined the angular dependence of SOT effects on localized in-plane strain induced by an out-of-plane electric field applied to the piezoelectric substrate. The induced strain precisely modulates magnetization switching via the SOT effect in multiferroic heterostructures, which also exhibit remarkable capability to modulate strain along different orientations – a feature with great potential for future applications in logic device arrays. To investigate the influence of electric fields on magnetization switching, harmonic Hall measurements, synchrotron-powered x-ray magnetic circular dichroism-photoemission electron microscopy (XMCD-PEEM), x-ray diffraction (XRD), magnetic force microscopy (MFM), and micromagnetic simulation were conducted. The results demonstrate that electric-field-induced strain enables precise control of SOT-induced magnetization switching with significantly reduced energy consumption, making it highly suitable for next-generation spin logic devices.

Nonlinear orbital and spin Edelstein effect in centrosymmetric metals

Nonlinear spintronics combines nonlinear dynamics with spintronics, opening up new possibilities beyond linear responses. A recent theoretical work [Xiao et al. Phys. Rev. Lett.130, 166302 (2023)] predicts the nonlinear generation of spin density [nonlinear spin Edelstein effect (NSEE)] in centrosymmetric metals based on symmetry analysis combined with first-principle calculation. This paper focuses on the fundamental role of orbital degrees of freedom for the nonlinear generation in centrosymmetric systems. Using a combination of tight-binding model and density functional theory calculations, we demonstrate that nonlinear orbital density can arise independently of spin–orbit coupling. In contrast, spin density follows through spin–orbit coupling. We further elucidate the microscopic mechanism responsible for this phenomenon, which involves the NSEE induced by electric-field-induced orbital Rashba texture. In addition, we also explore the potential applications of the nonlinear orbital and spin Edelstein effect for magnetic-field-free switching of magnetization.

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe3GaTe2 Devices.

The ability to manipulate magnetic states by a low electric current represents a fundamental desire in spintronics. In recent years, two-dimensional van der Waals (vdW) magnetic materials have attracted an extensive amount of attention due to their appreciable spin-orbit torque effect. However, for most known vdW ferromagnets, their relatively low Curie temperatures (TC) limit their applications. Consequently, low-power vdW spintronic devices that can operate at room temperature are in great demand. In this research, we fabricate nanodevices based on a solitary thin flake of vdW ferromagnet Fe3GaTe2, in which we successfully achieve nonvolatile and highly efficient magnetization switching by small currents at room temperature. Notably, the switching current density and the switching power dissipation are as low as 1.7 × 105 A/cm2 and 1.6 × 1013 W/m3, respectively, with an external magnetic field of 80 Oe; both are much reduced compared to those of conventional magnet/heavy metal heterostructure devices and other vdW devices.

Colossal Orbital Current Induced by Gradient Oxidation for High-Efficiency Magnetization Switching.

Orbital angular momentum flow can be used to develop a low-dissipation electronic information device by manipulating the orbital current. However, efficiently generating and fully harnessing orbital currents is a formidable challenge. In this study, an approach is presented that induces a colossal orbital current by gradient oxidation in Pt/Ta to enhance spin-orbit torque (SOT) and achieve high-efficiency magnetization switching. The maximum efficiency of the SOT before and after the gradient oxidation of Ta is improved relative to that of Pt by ≈600 and 1200%, respectively. The large SOT originates from the colossal orbital current because of the orbital Rashba-Edelstein effect induced by the gradient oxidation of Ta. In addition, a large spin-to-charge conversion efficiency is observed in yttrium iron garnet/Pt/TaOx because of the inverse orbital Rashba-Edelstein effect. Harnessing the orbital current can help effectively minimize the critical current density of the current-induced magnetization switching to 2.26-1.08 × 106 Acm-2, marking a 12-fold reduction compared to that using Pt. This findings provide a new path for research on low-dissipation spin-orbit devices and improve the tunability of orbital current generation.

Spin–orbit torque effect in silicon-based sputtered Mn3Sn film

Abstract Noncollinear antiferromagnet Mn3Sn has shown remarkable efficiency in charge–spin conversion, a novel magnetic spin Hall effect, and a stable topological antiferromagnetic state, which has resulted in great interest from researchers in the field of spin–orbit torque. Current research has primarily focused on the spin–orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn3Sn films. However, this method is not suitable for large-scale industrial preparation. In this study, amorphous Mn3Sn films and Mn3Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates. The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin–orbit torque effect generated by in-plane polarized spin currents existed in the Mn3Sn/Py heterostructure, with a spin–orbit torque efficiency of 0.016. Additionally, we prepared the perpendicular magnetized Mn3Sn/CoTb heterostructure based on amorphous Mn3Sn film, where the spin–orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density (3.9×107 A/cm2) compared to Ta/CoTb heterostructure. This research reveals the spin–orbit torque effect of amorphous Mn3Sn films and establishes a foundation for further advancement in the practical application of Mn3Sn materials in spintronic devices.

Layer-resolved vector magnetometry using generalized magneto-optical ellipsometry

We demonstrate the ability of a single magneto-optical reflection experiment to achieve layer-resolved vector magnetometry in multilayer films. For this purpose, we designed, fabricated, and measured a set of epitaxial ferromagnetic/non-magnetic/ferromagnetic heterostructure multilayer samples that exhibit in-plane uniaxial anisotropy and a tunable ferromagnetic interlayer coupling strength through the non-magnetic interlayer. By means of generalized magneto-optical ellipsometry measurements, we obtain the magnetization angles of the two different ferromagnetic layers independently as a function of the applied field. Hereby, we observe that the magnetization switching of one layer can trigger a discontinuous shift of the magnetization angle in the second layer if ferromagnetic interlayer coupling is present. Moreover, we reproduce the obtained behavior using a model of two coupled macrospins, which corroborates even the unexpected aspects of our experimental results and thus reinforces the sensitivity and reliability of our experimental layer-resolved vector magnetometry.

Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film

Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film

External manipulation of the spin-orbit torque and magnetization switching in gradient CoPd single layer via hydrogen

Recent findings regarding spin-orbit torques (SOTs) and current-induced magnetization switching in ferromagnetic (FM) single layers have attracted substantial attention due to the advantage of not necessitating the use of heavy-metal layers. Nevertheless, despite prior studies on the interior structural engineering of the SOT, the external techniques for manipulating the SOT in the FM single layer remains elusive, which is indispensable for the practical application of the single layer SOT devices. Here, we demonstrate external manipulation of SOT generation in CoPd single layer through the fabrication of CoPd film with a composition gradient, utilizing the H2-absorption property of Pd. It is found that the H-induced strain within the CoPd film plays a pivotal role in generating SOT. Meanwhile, we demonstrate that the critical current density required for the current-induced magnetization switching is markedly diminished with the application of H2 due to the enhanced SOT generation and reduced perpendicular magnetic anisotropy energy. Our findings offer a straightforward method for external manipulation of single layer SOT devices, and hold the potential for applications of the spintronic devices.

The p-type (Mn1.5Co0.5)VAl Heusler alloy with high Curie temperature for spintronics device applications

The solid-state method was employed to synthesize (Mn1·5Co0.5)VAl Heusler alloy particles it exhibits soft magnetic property with semiconducting nature. The X-ray diffraction technique was used to study the structural investigation, it revealed a pure L21 phase with a lattice parameter of a = 5.83 Å. It was thermally stable up to 900 °C, confirmed through thermogravimetric and differential thermal analysis with no observed weight loss, underscoring the alloys impressive thermal resilience. A positive carrier concentration was detected through the Hall measurements, its affirming the p-type semiconducting nature of the alloy. The magnetic property analysis revealed its soft magnetic nature with low coercivity. Remarkably, the Curie temperature was found at 799 K, surpassing both experimental and theoretical predictions. The magnetic characteristics of multicomponent alloys are significantly influenced by the degree of atomic order on the various crystallographic sites. Since, this type of material consuming little energy, it may be utilize magnetic switching for spintronic devices applications due to its high Curie temperature and low coercivity.

Harnessing ion beam erosion engineering for controlled self-assembly and tunable magnetic anisotropy in epitaxial films

The engineering of the surface morphology and the structure of the thin film is one of the essential technological assets for regulating the physical properties and functionalities of thin film-based devices. This study presents an easy and handy approach to tailor the surface structure of epitaxial thin films utilizing low-energy ion beam. Here, we investigate the evolution of the surface structure and magnetic anisotropy (MA) in epitaxial Fe/MgO (001) model systems subjected to multiple cycles of ion beam erosion (IBE) after thin film growth. The growth of Fe film occurs in the form of three–dimensional islands and exhibits intrinsic biaxial MA. Following a few cycles of IBE, an induced uniaxial magnetic anisotropy leads to a split in the hysteresis loop, and the film displays almost uniaxial magnetic switching behavior. More distinctly, we present a clear and conclusive evidence of (2 × 2) reconstruction of the Fe surface due to the atomic rearrangement by IBE. Furthermore, 57Fe isotope sensitive nuclear resonance scattering measurement provides insight into the depth-resolved magnetic information due to the modified surface topography. We also demonstrate that thermal annealing can reversibly tune the surface reconstruction and induced UMA. The feasibility of the IBE technique by adequately selecting IBE parameters for surface structure modification has been highlighted apart from conventional tailoring of the morphology for the tuning of UMA and introduces a new dimension to our understanding of self-assembled surface morphology evolution by IBE.

Rancang Bangun Purwarupa Simulasi Sistem Keamanan Rumah Berbasis Internet of Things

The use of information technology has spread to all fields, for example in the field of security using the Internet of Things technology. One of the places that need to be given security is the home, so that in this study prototypes of home security systems using the Internet of Things have been made with the aim of providing information to homeowners in the event of infiltration through windows or doors, gas leaks and fires. The tools used are Arduino Mega 2560 as a microcontroller, gas sensor, fire sensor, magnetic switch sensor, RFID, keypad, and selenoid. The home security system is made so that homeowners can control the condition of the home. The results of this study are that the home security systems that are made can run well and can be integrated with home security information systems. Sensors can detect gas leaks, fires, and doors or windows open when the security system is active. Homeowners can only turn off the home security system and unlock the door by using RFID tags that have registered IDs and correct passwords. Home security systems can also turn on alarms and send notifications to homeowners, fire stations and police stations in the event of a fire, gas leak or window or door that is opened when the security system is active.

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of non-volatile memory for in-memory computing, with spin–orbit torque (SOT) magnetic random-access memory (MRAM) being a leading area of research. In this study, we numerically demonstrate that a precise combination of damping-like and field-like spin–orbit torques can facilitate precessional magnetization switching. This mechanism enables the binary memristivity of magnetic tunnel junctions (MTJs) through the modulation of the amplitude and width of input current pulses. Building on this foundation, we have developed a scheme for a reconfigurable spintronic logic gate capable of directly implementing Boolean functions such as AND, OR, and XOR. This work is anticipated to leverage the sub-nanosecond dynamics of SOT-MRAM cells, potentially catalyzing further experimental developments in spintronic devices for in-memory computing.

Emerging Spin-Orbit Torques in Low-Dimensional Dirac Materials.

We report a theoretical description of novel spin-orbit torque components emerging in two-dimensional Dirac materials with broken inversion symmetry. In contrast to usual metallic interfaces where fieldlike and dampinglike torque components are competing, we find that an intrinsic dampinglike torque which derives from all Fermi-sea electrons can be simultaneously enhanced along with the fieldlike component. Additionally, hitherto overlooked torque components unique to Dirac materials emerge from the coupling between spin and pseudospin angular momenta, leading to spin-pseudospin entanglement. These torques are found to be resilient to disorder and could enhance the magnetic switching performance of nearby magnets.

Magnetic Switching of Second-Harmonic Generation from Single Cerium-Based Coordination Polymer Microcrystals.

Conventional access and modulation of second-harmonic generation (SHG) require precise control of crystal orientation, which faces great mechanical challenges in the case of micro/nanocrystals. Here, we demonstrate the magnetic-field-tunable SHG performance of lanthanide coordination polymer (Ce-BTC CP) microcrystals through field-aligned orientations. The coordination of Ce ions and organic ligands constructs a noncentrosymmetric structure, which not only contributes to a favorable powder SHG efficiency 3.2 times larger than that of the benchmark KH2PO4 (KDP) but also endows the microcrystals with strong magnetic anisotropy. The SHG efficiency (∼0 to 10 × KDP) depends on the orientation of the crystallographic c-axis, whereas magnetic anisotropy always aligns the c-axis with the magnetic field at a specific angle. Accordingly, the SHG can be magnetically switched by field-induced alignments. The adsorption of dyes by Ce-BTC CPs further facilitates the magnetic switching of multicolor fluorescence that can be excited by the SHG. Our work provides a new pathway for achieving SHG modulation at the microscopic level.

Electric field control of spin-orbit torque in annealed Ta/CoFeB/HfO x heterostructures via interfacial oxidation modulation

Electric field control of spin-orbit torque (SOT) exhibits promising potential in advanced spintronic devices through interfacial modulation. In this work, we investigate the influence of electric field and interfacial oxidation on SOT efficiency in annealed Ta/CoFeB/HfO x heterostructures. By varying annealing temperatures, the damping-like SOT efficiency reaches its peak at the annealing temperature of 320 °C, with an 80% field-free magnetization switching ratio induced by SOT having been demonstrated. This enhancement is ascribed to the annealing-induced modulation of oxygen ion migration at the CoFeB/HfO x interface. By applying voltages across the Ta/CoFeB/HfO x heterostructures, which drives the O2‒ migration across the interface, a reversible, bipolar, and non-volatile modulation of SOT efficiency was observed. The collective influence of annealing temperature and electric field effects on SOT carried out in this work provides an effective approach into facilitating the optimization and control of SOT in spintronic devices.

Magnetization dynamics and domain reversal in electrodeposited permalloy thin films: impact of thickness and annealing treatment

The domain reversal and magnetization dynamics of electrodeposited permalloy (Fe20Ni80) thin films on conducting ITO/glass substrate was investigated using Magneto-optic Kerr effect microscopy and ferromagnetic resonance. Permalloy thin films were electrodeposited with thickness ranging from 66 nm to 330 nm. Synchrotron XRD confirmed the deposited permalloy in FCC phase without any impurity. The squared hysteresis with very low coercivity (Hc ∼ 5 Oe) established soft magnetic nature of the films. Further, angular MOKE hysteresis measurements with simultaneous domain imaging revealed four-fold surface anisotropy in as-deposited film ensuing magnetization reversal via branched and ripple domains. The annealing treatment in Ar+H2 atmosphere removed surface anisotropy and renovated the magnetization reversal through 180° branched domains with rapid magnetization switching. Ferromagnetic resonance spectroscopy discloses reduction in the gyromagnetic ratio (γ) as well as in Gilbert damping parameter (α) as the film thickness increases. The lowest Gilbert damping for 330 nm film measured at 0.022, which further reduced to 0.018 after annealing. The combination of rapid magnetization switching and low Gilbert damping in the electrodeposited permalloy thin films render them promising for implementation in high-frequency microwave devices devices and magnetic sensors.

Plasmon‐Enhanced Optical Control of Magnetism at the Nanoscale via the Inverse Faraday Effect

The relationship between magnetization and light has been the subject of intensive research for the past century. Herein, the impact of magnetization on light polarization is well understood. Conversely, the manipulation of magnetism with polarized light is being investigated to achieve all‐optical control of magnetism, driven by potential technological implementation in spintronics. Remarkable discoveries, such as the single‐pulse all‐optical switching of magnetization in thin films and submicrometer structures, have been reported. However, the demonstration of local optical control of magnetism at the nanoscale has remained elusive. Herein, it is demonstrated that exciting gold nanodiscs with circularly polarized femtosecond laser pulses lead to ultrafast, local, and deterministic control of magnetization in an adjacent magnetic film. This control is achieved by exploiting the magnetic moment generated in plasmonic nanodiscs through the inverse Faraday effect. The results pave the way for light‐driven control in nanoscale spintronic devices and provide important insights into the generation of magnetic fields in plasmonic nanostructures.

Tilted Perpendicular Anisotropy-Induced Spin-Orbit Ratchet Effects

Abstract Using micromagnetic simulations, in this study we demonstrate the tilted perpendicular anisotropy -induced spin-orbit ratchet effect. During spin-orbit torque (SOT)-induced magnetization switching, the critical currents required to switch between the two magnetization states (upward and downward magnetization) are asymmetric. In addition, in the nanowire structure, tilted anisotropy induces formation of tilted domain walls (DWs). The tilted DWs exhibit a ratchet behavior during motion. The ratchet effect during switching and DW motions can be tuned by changing the current direction with respect to the tilting direction of anisotropy. The ratchet motion of the DWs can be used to mimic the Leaky–Integrate–Fire function of a biological neuron, especially the asymmetric property of the “potential” and “reset” processes. Our results provide a full understanding of the influence of tilted perpendicular anisotropy on SOT-induced magnetization switching and DW motion, and are beneficial for design of further SOT-based devices.