This paper discusses some results about Single-Walled Carbon Nanotubes electrophoretically deposited on silicon in order to fabricate Field Emission devices. Field emission characterization was executed into a high vacuum chamber. Emission characteristics from distinct samples were compared by extracting the macroscopic electric field from V-d curves and applying it as a quality parameter. It was demonstrated that carbon nanotubes on the Si surface could improve approximately 8 times the field emission properties of devices.
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