We investigated the effect of boron doping on the functional and structural properties of VO2 thin films. Temperature-dependent measurements were performed on pure and boron-doped (0.5 and 1.3 at.%) VO2 films grown on Al2O3(0001) by Reactive Pulsed Laser Deposition. The transition temperature is initially reduced by the insertion of boron; decreasing from ca. 346 K in the case of the pure sample to 335 K for a 0.5 at.% boron amount. Further increase of the boron concentration leads to a slight decrease of the transition temperature (−2 K), a significantly broader hysteresis loop and a reduced resistivity contrast (less than 3 orders of magnitude). Raman spectroscopy and high-resolution X-ray diffraction were performed to elucidate the nature of the involved phases and their structure. A correlation was found between increasing the boron concentration and the formation of two peculiar in-plane epitaxial relationships, the VO2 films evolving from one to the other. We also evidenced the presence of the transient M2 phase in the highest doped sample.
Read full abstract