Low Sheet Resistance Research Articles

Synergistic creation of highly stable strain-insensitive pressure sensors by in-plane strain modulation and quasi-homogenous interfacial design

The urgent requirement of electronic skin conformably attached to nonplanar surfaces to provide stable monitoring in areas of healthcare, prosthetics, and robotics promotes the development of strain-insensitive/unperturbed pressure sensors. The main challenges lie in: (1) stretchability and conductive stability of flexible electrodes and (2) mechanical stability of heterogeneous interfaces. This study presents a highly stable strain-insensitive pressure sensor achieved by in-plane strain modulation and quasi-homogenous interfacial design. Strain modulation of stretchable electrodes by both periodic microstructured engineering and pre-stretching strategies (called “island-ripple”) was employed to suppress microcracks propagation. The improvement in stretchability and cyclic conductive stability of electrodes was identified by finite element analysis and experimental verification. The pre-stretched microconed stretchable electrode with a low sheet resistance of 0.546 Ω sq−1 shows a maximum deformation of up to 80% and excellent cyclic conductive stability over 10000 times under 30% strain. Quasi-homogenous interface strategy by the CNTs/PDMS system was employed to enhance the mechanical and electrical stability of the electrode-active materials interface, demonstrating a strong peel strength and shear strength of >40.9 N/m and >124.8 kPa, respectively. The as-prepared strain-insensitive pressure sensor provides constant sensing performance over 5000 stretching-releasing cycles within 20% stretching. In addition, a 4 × 4 pixel strain-insensitive pressure sensor array with reduced cross-talk circuit design was further integrated to identify the shape and weight of different objects under strains. The stretchability and stability of our sensor enable it to be applied in stretchable electronics with great potential.

High-Fidelity sEMG Signals Recorded by an on-Skin Electrode Based on AgNWs for Hand Gesture Classification Using Machine Learning.

The human forearm is one of the most densely distributed parts of the human body, with the most irregular spatial distribution of muscles. A number of specific forearm muscles control hand motions. Acquiring high-fidelity sEMG signals from human forearm muscles is vital for human-machine interface (HMI) applications based on gesture recognition. Currently, the most commonly used commercial electrodes for detecting sEMG or other electrophysiological signals have a rigid nature without stretchability and cannot maintain conformal contact with the human skin during deformation, and the adhesive hydrogel used in them to reduce skin-electrode impedance may shrink and cause skin inflammation after long-term use. Therefore, developing elastic electrodes with stretchability and biocompatibility for sEMG signal recording is essential for developing HMI. Here, we fabricated a nanocomposite hybrid on-skin electrode by infiltrating silver nanowires (AgNWs), a one-dimensional (1D) nano metal material with conductivity, into polydimethylsiloxane (PDMS), a silicone elastomer with a similar Young's modulus to that of the human skin. The AgNW on-skin electrode has a thickness of 300 μm and low sheet resistance of 0.481 ± 0.014 Ω/sq and can withstand the mechanical strain of up to 54% and maintain a sheet resistance lower than 1 Ω/sq after 1000 dynamic strain cycles. The AgNW on-skin electrode can record high signal-to-noise ratio (SNR) sEMG signals from forearm muscles and can reflect various force levels of muscles by sEMG signals. Besides, four typical hand gestures were recognized by the multichannel AgNW on-skin electrodes with a recognition accuracy of 92.3% using machine learning method. The AgNW on-skin electrode proposed in this study has great potential and promise in various HMI applications that employ sEMG signals as control signals.

Conductive Korean Traditional Paper (Hanji) Coupled with Ag Nanowire for Functional Electronic Paper Windows in Hanok

AbstractKorean traditional paper known as Hanji is coupled with Ag nanowires (NWs) to be used as multi‐functional paper windows in wooden flame doors of a traditional Korean house (Hanok). The Ag NW is uniformly embedded in a handmade Hanji, consisting of multiple laminated sheets formed through ssangbal filtering up and spray method. The combination demonstrates a low sheet resistance of 28 Ohm square−1because of a percolating network structure of Ag NWs, which is apt for interconnectors and electrodes. Owing to the flexibility of the Hanji and Ag NWs, outstanding mechanical flexibility, apt for curved or flexible electronic paper windows, is observed. To further examine the potential of the multi‐functional electronic paper window, anti‐bacterial and electromagnetic interference shield properties of the Hanji are also investigated. It is noted that the functional Hanji sterilizes 99.9% of staphylococcus aureus and Klebsiella pneumonia and shows 15 dB (12–18 GHz) shielding efficiency due to the existence of the metallic Ag NWs network. In addition, successful operation of Hanji‐based interconnectors, thin film heaters, and touch panels demonstrates that the Hanji‐based electronic paper window can be used as a device‐integrated paper window in traditional Hanok or oriental traditional houses.

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN hetero-interface is attracting much attention because of its potential to develop p-channel transistors required for GaN complementary logic integrated circuits. This platform is compatible with commercial AlGaN/GaN n-channel electronics, but the performance of GaN p-channel transistors has been far behind. In this work, 2DHGs in GaN/AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated. The Al composition of the AlGaN barrier has been pushed as high as possible without obvious strain relaxation, and the record high 2DHG sheet density and conductivity on the GaN/AlGaN/GaN platform have been obtained. By adopting a parallel conduction model, a dependent relationship of the 2DHG density on temperature has been extracted. The temperature dependent Hall-effect results have demonstrated that the 2DHG density boosts by 75 times and 46 times at room temperature and 77 K, respectively, when the Al composition is pushed from 0.18 to 0.45 for the AlGaN barriers. The 2DHG sheet density reaches 3.6 × 1013 and 2.1 × 1013 cm−2 at room temperature and 77 K, respectively, and the lowest sheet resistance is 8.9 kΩ/□ at 77 K. Such a 2DHG is beneficial for fabrication of p-channel GaN transistors with lower on-resistance on the already-industrialized platform.

Effect of blocking layer on achieving low sheet resistances in low-E multilayer structures

Low-emissivity films consisting of a metal oxide/Ag/metal oxide structure improve the thermal insulation performance of windows. Deposition of an oxide layer on top of the Ag layer requires either the insertion of a blocking layer (BL) or the sputtering deposition of an oxide target under an argon atmosphere. In this study, we carried out a sequential sputtering deposition method for inserting a BL to achieve both high visible-light transmittance and low sheet resistance. The effects of metallic and oxide BLs on the sheet resistances were investigated, and metallic BLs were confirmed to cause an increase in sheet resistance due to the diffusion of metal atoms into the Ag layer. Oxide BLs deposited under low oxygen concentrations maintained the low sheet resistance. The most significant result was obtained with a TiO x BL deposited under 2.9% oxygen, which prevented an increase in sheet resistance even after the deposition of the top layer (TL). By optimizing the thickness of the TL, high visible-light transmittance and low sheet resistance were achieved in a glass/TiO2/ZnO/Ag/TiO x /ZnO multilayer. Thus, high-performance multilayers could be fabricated by selecting an appropriate BL, which is beneficial for the industrial fabrication of low-E films.

Bimetallic Pt–Ni Two-Dimensional Interconnected Networks: Developing Self-Assembled Materials for Transparent Electronics

Continuous advancements in science and technology in the field of flexible devices encourage researchers to dedicate themselves to seeking candidates for new flexible transparent conductive films (FTCFs). Our recently developed two-dimensional (2D) metal aerogels are considered as a new class of FTCFs. Here, we describe a new large-scale self-assembly synthesis of bimetallic Pt–Ni 2D metal aerogels with controllable morphology during the synthesis. The obtained 2D aerogels require only a low quantity of precursors for the synthesis of percolating nanoscale networks with areas of up to 6 cm2 without the need of an additional drying step. Stacks of the obtained monolayer structures display low sheet resistances (down to 270 Ω/sq), while decreasing the optical transparency. In perspective, the 2D bimetallic Pt–Ni aerogels not only enrich the structural diversity of metal aerogels but also bring forth new materials for further applications in flexible electronics and electrocatalysis with reduced costs of production.

(002) oriented ZnO and ZnO:S thin films by direct ultrasonic spray pyrolysis: A comparative analysis of structure, morphology and physical properties

In this study, we deposit sulfur incorporated ZnO thin films (ZnO:S) by ultrasonic deposition and analyze changes in the structure, morphology, optical and electrical properties of the films in comparison with the pristine ZnO thin films. Further, electronic band structures of ZnO and (ZnO:S) were theoretically calculated using DFT-VASP method. ZnO and (ZnO:S) thin films formed at different conditions showed hexagonal crystal structure with crystallites of 30–40 nm in size fully oriented along [002] direction perpendicular to substrate. The optical band gap of ZnO was 3.2 eV which was reduced to 2.8 eV due to sulfur incorporation. Vacuum annealed ZnO showed a very low sheet resistance of 67 Ω/□ and the value was increased to 470 Ω/□ in ZnO:S films, nearly metallic behavior. Hall effect measurements confirmed the n-type conductivity with a maximum carrier concentration of 5.6 × 1020 cm−3. These films can find potential applications as window layers with improved charge extraction contacts for solar cell applications.

Self-healing behaviors of metallized high-temperature dielectric films for capacitor applications

High-temperature metallized film capacitors (MFCs) are urgently desired in harsh application environments. Although there are a large number of research on polymer dielectrics with satisfactory energy storage property and excellent thermal resistance, it is not clear about the self-healing performance which is the key factor determining whether they can be applied in practice. In this paper, the self-healing behaviors of the metallized high-temperature dielectric films of poly (ethylene 2,6-naphthalate) (PEN), poly (ether ketone) (PEEK) and polyimide (PI) have been explored. Specifically, the influence of polymer chemistry, sheet resistance and interlayer pressure on self-healing process is analyzed in detail. It is found that the high carbon content in PI leads to the self-healing failure at low sheet resistance, though it displays small self-healing energy at high sheet resistance. The probability of successful self-healing of the metallized PEEK film is greatly reduced at high interlayer pressure. In addition, high self-healing energy which would lead to the fast ageing of MFC is obtained in PEEK. Fortunately, PEN with relatively low carbon content and the aliphatic-aromatic alternating structure shows brilliant self-healing ability at different sheet resistances and interlayer pressures with reasonable self-healing energy. Hence, PEN may be a promising candidate for high-temperature MFC from the perspective of self-healing.

Highly reliable MoOx/Ag NW bilayer transparent conductive thin films fabricated by all solution process and transparent heater application

The chemical instability and the decomposition of Ag nanowires (NWs) during thermal process can result in irreversible structural damage, suppressing the practical use of pure Ag NWs based transparent conductive thin films (TCTFs). In this paper, novel MoOx/Ag NW bilayer TCTFs are uniformly fabricated on glass substrates via all solution process. The electrical and optical properties of MoOx/Ag NW bilayers can be controlled by the density of the Ag NW networks. At optimal preparation conditions, MoOx/Ag NW bilayer thin films show low sheet resistance of 10.8 Ω/sq. and high optical transmittance of 85% in the visible region. The covering of MoOx layer improves the thermal stability and adhesivity of the Ag NW networks. Especially, the MoOx/Ag NW bilayer thin films are robust and able to withstand a high temperature of 300 °C in air, without deterioration of performance. The resistance does not show significant change after taping test, indicating a strong adhesion of Ag NWs to the substrate. In contrast to the degradation of pure Ag NW networks including the significant reduction of its conductivity when subjected to a series of harsh corrosion environments, the MoOx/Ag NW bilayer thin films survive structurally and retain their conductivity. Finally, the bilayer thin film is chosen to fabricate a transparent heater, which exhibits excellent heating performance. Its deicing and defogging availabilities are also shown by deicing and defogging tests.

Synthesis of Al Thin Films with High Optical Transmittance by DC Magnetron Sputtering Process Parameter Optimization

Nanostructured Al thin film with higher optical transmittance and electrical conductivity has intensive applications in solar cells and optical and microelectronic devices. This experimental-based research study has optimized the DC magnetron sputtering deposition parameters (sputtering power, sputtering current, voltage, and working gas pressure) for Al thin film deposition to obtain the highest optical transmittance and lower sheet resistance. Optical transmittance, surface roughness, film thickness, sheet resistance, grain size, and surface morphology were characterized using UV-vis-NIR spectroscopy, surface profiler, spectroscopic ellipsometry, four-point probe, and FE-SEM, respectively to determine the effects of sputtering process parameters on Al films’ different properties. Experimental investigations reveal that electrical conductivity, surface roughness, grain size, and deposition rate increase with increasing of sputtering power at certain working gas pressure. At the optimized condition (sputtering power 80 W, working gas pressure 5 mTorr, deposition time 5 min and ambient temperature), the relatively higher optical transmittance in visible region 96%, moderate sheet resistance 0.196 ohm/square and lowest average surface roughness 2.86 nm were obtained for Al thin film. After all, this research study will help to understand the best Al film deposition parameters in terms of optical transmittance and electrical conductivity for future research and industrial applications.

Multilayer graphene-enabled structure based on Salisbury shielding effect for high-performance terahertz absorption.

Sandwich-type structure based on Salisbury screen effect is a simple and effective strategy to acquire high-performance terahertz (THz) absorption. The number of sandwich layer is the key factor that affects the absorption bandwidth and intensity of THz wave. Traditional metal/insulant/metal (M/I/M) absorber is difficult to construct multilayer structure because of low light transmittance of the surface metal film. Graphene exhibits huge advantages including broadband light absorption, low sheet resistance and high optical transparency, which are useful for high-quality THz absorber. In this work, we proposed a series of multilayer metal/PI/graphene (M/PI/G) absorber based on graphene Salisbury shielding. Numerical simulation and experimental demonstration were provided to explain the mechanism of graphene as resistive film for strong electric field. And it is important to improve the overall absorption performance of the absorber. In addition, the number of resonance peaks is found to increase by increasing the thickness of the dielectric layer in this experiment. The absorption broadband of our device is around 160%, greater than those previously reported THz absorber. Finally, this experiment successfully prepared the absorber on a polyethylene terephthalate (PET) substrate. The absorber has high practical feasibility and can be easily integrated with the semiconductor technology to make high efficient THz-oriented devices.

Review of the Versatile Patterning Methods of Ag Nanowire Electrodes

To use Ag nanowires for various industries, it is crucial to develop an appropriate patterning method. There are various types of patterning methods, but there has been no comprehensive review discussing and summarizing them. This review paper provides an overview of the various patterning techniques of Ag nanowire electrodes, including photolithography, nanoimprint lithography, inkjet printing, electrohydrodynamic jet printing, and other emerging methods. These transparent electrodes have received significant attention due to their high transparency, low sheet resistance, and flexibility, making them ideal for applications such as flexible electronics, touch screens, and solar cells. Each patterning technique has its benefits and limitations, and its suitability depends on specific application requirements. Photolithography is a well-established technique that can achieve high-resolution patterns, while nanoimprint lithography is a low-cost and versatile method for large-area patterning. Inkjet printing and E-jet printing provide the advantages of high throughput, precise control, and the ability to print on different substrates. Stencil printing, laser direct writing, and electrospinning are emerging techniques that showing high potential for patterning Ag nanowire electrodes. The choice of patterning technique ultimately depends on various factors, such as resolution requirements, cost, substrate compatibility, and throughput.

Coating of Leather with Dye-Containing Antibacterial and Conducting Polypyrrole

In the search for functional organic biomaterials, leather constituted by collagen fibers was coated with a conducting polymer, polypyrrole. The coating was carried out during the oxidation of pyrrole in an aqueous solution of poly(N-vinylpyrrolidone) in the presence of five organic dyes: crystal violet, neutral red, methyl orange, acriflavine, and methylene blue. This technique ensures the uniform coating of collagen fibers with polypyrrole and incorporation of organic dyes. The surface morphology was observed with scanning electron microscopy and the transverse profile, reflecting the penetration of the conducting phase into the leather body with optical microscopy. While the polypyrrole coating endows leather with electrical conductivity, organic dyes are expected to affect the polymer morphology and to provide an antibacterial effect. The lowest sheet resistance and antibacterial activity were obtained with crystal violet. This type of coating was characterized in more detail. Infrared spectroscopy confirmed the coating of collagen fibers with polypyrrole and dye incorporation. Mechanical properties were extended to the cyclic bending of the leather at various angles over 5000 cycles. The relative resistance changes were a few percent, indicating good electrical stability during repeated mechanical stress.

Original concept of cracked template with controlled peeling of the cells perimeter for high performance transparent EMI shielding films

The problem of sputtering of thick metal films on micro and nanotemplates is important for obtaining mesh transparent conductors with excellent optoelectric characteristics. In this work, we demonstrate for the first time the possibility of controlling the degree of peeling of the cell perimeter from the substrate for a cracked template based on egg white by alternating the operations of moistening the template with saturated water vapor and shock drying with hot air. Local peeling of the cracked template cells perimeter makes it possible to increase the thickness of the metal sputtered on the cracked template by more than 1 µm, which is not achievable for other lithographic approaches. Our technique was used to obtain thick Ag meshes with a low sheet resistance of no more than 1.59 Ω/sq and a transparency of about 89.1%. The thick Ag meshes show a shielding efficiency (SE) of 49 dB or 99.998% of the incident power of an electromagnetic wave at a frequency of 1 GHz. In a sandwich geometry, thick Ag meshes, which simulates a real shielding window, the shielding efficiency (SE) reaches 71 dB with a transparency of more than 80%.

High work function thermally stable OMO-based transparent electrode for optoelectronic applications

Ultrathin metal films (UTMFs) have emerged as a potential contender as a transparent electrode (TE) in various optoelectronic applications. Oxide-metal-oxide (OMO) based TEs incorporating UTMFs are the new state-of-the-art approach towards fabricating high-performance indium-free TEs. Here, we have demonstrated an OMO-based indium-free TE utilizing nickel oxide (NiO) and silver (Ag) as oxide and metal films respectively. Optical constants of NiO and Ag obtained from spectroscopic ellipsometry have been utilized in determining the optimum thickness of alternate layers in the OMO stack using a MATLAB code based on the transfer matrix method. To minimize the reflection losses, 40 nm of NiO as films was deposited on either side of the Ag film. A highly transparent NiO/Ag/NiO (NAN) electrode has been obtained by the physical vapor deposition technique. The fabricated TE shows high transmittance >82% in the visible region along with a low sheet resistance below 6 Ω/□. To analyze the thermal stability of NAN-TE, it has been treated at different elevated temperatures. It was observed that NAN-TE shows better thermal stability in comparison to commercially available ITO-TE. The incorporation of NiO as an overcoat layer results in enhancing the work function to 5.35 eV as measured by Kelvin Probe Force Microscopy (KPFM). The high average visible transmittance, high work function, low sheet resistance, and high-temperature tolerance make the developed TE compatible with optoelectronic devices where high-temperature processing is necessary. To verify the same a bifacial perovskite solar cell is fabricated incorporating the NAN-TE as top TE and a power conversion efficiency (PCE) of 3.51% and 2.56% is obtained by illuminating the fabricated device from FTO and NAN side.

Bayesian-Optimization-Assisted Laser Reduction of Poly(acrylonitrile) for Electrochemical Applications.

Laser reduction of polymers has recently been explored to rapidly and inexpensively synthesize high-quality graphitic and carbonaceous materials. However, in past work, laser-induced graphene has been restricted to semiaromatic polymers and graphene oxide; in particular, poly(acrylonitrile) (PAN) is claimed to be a polymer that cannot be laser-reduced successfully to form electrochemically active material. In this work, three strategies to surmount this barrier are employed: (1) thermal stabilization of PAN to increase its sp2 content for improved laser processability, (2) prelaser treatment microstructuring to reduce the effects of thermal stresses, and (3) Bayesian optimization to search the parameter space of laser processing to improve performance and discover morphologies. Based on these approaches, we successfully synthesize laser-reduced PAN with a low sheet resistance (6.5 Ω sq-1) in a single lasing step. The resulting materials are tested electrochemically, and their applicability as membrane electrodes for vanadium redox flow batteries is demonstrated. This work demonstrates electrodes that are processed in air, below 300 °C, which are cycled stably over 2 weeks at 40 mA cm-2, motivating further development of laser reduction of porous polymers for membrane electrode applications such as RFBs.

Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD

For the growth of low-defect crack-free GaN heterostructures on large-area silicon substrates, compositional grading of AlGaN is a widely adapted buffer technique to restrict the propagation of lattice-mismatch induced defects and balance the thermal expansion mismatch-induced tensile stress. So far, a consolidation of the design strategy of such step-graded buffers has been impaired by the incomplete understanding of the effect of individual buffer design parameters on the mechanical and microstructural properties of the epilayers. Herein, we have analyzed a series of metal-organic chemical vapor deposition grown GaN/graded-AlGaN/AlN/Si heterostructures through in situ curvature measurements and post-growth x-ray diffraction (XRD). Our results reveal that in such epi structures, the GaN layer itself induces more compressive stress than the AlGaN buffer, but the underlying AlGaN layers dictate the magnitude of this stress. Furthermore, for a fixed AlGaN buffer thickness, the mean-stress accumulated during the GaN growth is found to be correlated with its structural properties. Specifically, one µm thick GaN layers that acquire 1.50 GPa or higher compressive mean-stress are seen to possess XRD ω-FWHM values less than 650 arc-sec. Also, the evolution of instantaneous stresses during the growth of the AlGaN layers is found to be a valuable indicator for buffer optimization, and composition difference between successive layers is established as a crucial criterion. The results also show that increasing the total buffer thickness (for a fixed number of steps) or increasing the number of steps (for a fixed total buffer thickness) may not always be beneficial. Irrespective of the buffer thickness, optimized high electron mobility transistor structures show similarly low sheet-resistance (∼350 Ω □)−1 and high mobility (∼2000 cm2 V−1 s −1) at room temperature.

An Inverted Layer‐by‐Layer Process to Enable Ultrasmooth MXene–Ag Nanowire Hybrid Electrode for Organic Photovoltaics

To realize flexible and wearable electronic devices in the future, it is important to develop flexible transparent electrodes while replacing indium tin oxide‐based transparent electrodes. Herein, a highly conductive transparent electrode based on hybrid materials of MXene nanosheet films and Ag nanowires (AgNWs) is reported, which synergistically combines the advantageous properties of each material. MXene/AgNW/colorless polyimide (cPI) hybrid electrode is prepared utilizing reverse sequential processing of MXene nanosheets and AgNWs and exhibits significantly improved conductivity and transmittance compared with the MXene/cPI electrode. Furthermore, owing to the abundant hydrophilic termination groups (‐O and ‐OH) on the MXene surface, the MXene/AgNW/cPI hybrid electrode shows hydrophilic surface properties and a highly uniform film. Therefore, the MXene/AgNW/cPI hybrid electrode exhibits higher transmittance at 550 nm to 79% than MXene/cPI electrode (59%) and considerably lower sheet resistance (13.08 ohm sq−1) than MXene/cPI electrode (113.6 ohm sq−1). Flexible organic photovoltaic devices fabricated with MXene/AgNW/cPI hybrid electrode achieve higher power conversion efficiency of 10.3% compared with 6.70% of the corresponding MXene/cPI electrode. These results provide the great potential of Ti3C2‐based MXene hybrid electrode as a flexible transparent electrode, paving the way for various and wider range of applications include solar cells and light‐emitting diodes.

Interference effects induced by electrodes and their influences on the distribution of light field in perovskite absorber and current matching of perovskite/silicon tandem solar cell

In recent years, there has been rapid developments of both single-junction and tandem solar cells based on metal halide perovskite, which both require metal electrodes or transparent conductive electrodes. In the present study, interference effects induced by electrodes are investigated to reveal the light field distribution in perovskite absorbers. The results show that the interference effect occurring near the absorption edge will lead to complicated light distribution, which supposedly influences the location of carrier generation. The interference effect introduced by transparent electrodes can influence the current matching between sub-cells of perovskite/silicon monolithic tandem solar cells. As revealed through calculations, an indium zinc oxide (IZO) electrode with a thickness of 200 nm is beneficial for current matching. The optimal power conversion efficiency (PCE) is achieved when the thickness is increased to 250 nm, which could be attributed to lower sheet resistance of the IZO electrode improving the fill factor of the current density–voltage (J-V) curve. However, further increasing the thickness results in reduced PCE due to the decreased average transmittance of the IZO electrode. This work provides a strategy for selecting the proper thickness of a transparent electrode and perovskite absorber for a solar cell, and thus, can facilitate design and fabrication of devices for practical application.

Large‐Area Smooth Conductive Films Enabled by Scalable Slot‐Die Coating of Ti3C2Tx MXene Aqueous Inks

AbstractLarge‐area flexible transparent conductive electrodes (TCEs) featuring excellent optoelectronic properties (low sheet resistance, Rs, at high transparency, T) are vital for integration in transparent wearable electronics (i.e., antennas, sensors, supercapacitors, etc.). Solution processing (i.e., printing and coating) of conductive inks yields highly uniform TCEs at low cost, holding great promise for commercially manufacturing of transparent electronics. However, to formulate such conductive inks as well as to realize continuous conductive films in the absence of percolation issue are quite challenging. Herein, the scalable slot‐die coating of Ti3C2Tx MXene aqueous inks is reported for the first time to yield large‐area uniform TCEs with outstanding optoelectronic performance, that is, average DC conductivity of 13 000 ± 500 S cm−1. The conductive MXene nanosheets are forced to orientate horizontally as the inks are passing through the moving slot, leading to the rapid manufacturing of highly aligned MXene TCEs without notorious percolation problems. Moreover, through tuning the ink formulations, such conductive MXene films can be easily adjusted from transparent to opaque as required, demonstrating very low surface roughness and even mirror effects. These high‐quality, slot‐die‐coated MXene TCEs also demonstrate excellent electrochemical charge storage properties when assembled into supercapacitors.