Organic light-emitting diodes with low driving voltage based on fullerene <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$({\rm C}_{60})$</tex></formula> as an electron transport layer and tris (8-hydroxyquinolinato)-aluminum <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$({\rm Alq}_{3})$</tex></formula> as a buffer layer are successfully fabricated. For the optimal device with structures of ITO/NPB (40 nm)/ <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm Alq}_{3}$</tex> </formula> /(30 nm)/ <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm C}_{60}$</tex></formula> (20 nm)/ <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm Alq}_{3}$</tex></formula> (3 nm)/LiF (0.8 nm)/Al (120 nm), the turn-on driving voltage is 2.8 V, which is reduced 0.4 V compared with that of the control device. Meanwhile, the driving voltage of 4.9 V has been achieved at a luminance of 1000 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm cd}/{\rm m}^{2}$</tex></formula> in this device, which is reduced 1.8 V compared with that of the control device. The results have a significant effect on the commercialization application of the devices.