Abstract
We present excellent polymeric buffer materials based on the poly(9,9-dioctylfluorene-co-N, N-di(phenyl)-N,N-di(3-carboethoxyphenyl)benzidine) (BFE) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped BFE with 3,5-dinitrobenzonitrile (35DNBN), a strong electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 7.2 cd/A and 5.5 lm/W are demonstrated from blue OLEDs with these doped polymeric anode buffer system. The 40 nm thick anode buffer material showed a similar current density-voltage (J-V) behavior to that of PEDOT:PSS based device. Results reveal a practical way to fabricate the highly efficient solution processed devices for low cost production of printing devices for the future.
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