Low-power Radio Frequency Research Articles

Design and fabrication of S-band power amplifier for wireless sensor networks

This paper discusses the process of designing and manufacturing a wideband power amplifier operating in the S-band. To amplify a low power and broadband radio frequency signals from 2.1 GHz to 2.5 GHz, the proposed power amplifier uses a diagram of a two-stages amplification with peak offset amplification frequency 2.3 GHz. The power amplifier is designed with a center frequency difference of 2.2 GHz and 2.4 GHz respectively to achieve a bandwidth of 400 MHz. The proposed power amplifier (PA) uses RF transistor SHF-0589 using gallium arsenide heterostructure field-effect transistor (GaAs HFET) technology for high gain and low power consumption. The complete amplifier achieves power gain 21.1 dB inband 2.1-2.5 GHz and achieve maximum power gain of 22.5 dB at the frequency of 2.4 GHz; the output power rise up to 33 dBm; input reflection coefficient (S11) reaches -19.2 dB and output reflection coefficient reaches -17.2 dB. The designed amplifier circuit can be used for wireless sensor networks operating at S-band.

Design of a kilohertz repetition rate, low-emittance S-band photoinjector

Low-emittance photoinjector-enabled cutting-edge scientific instruments, such as free-electron lasers, inverse Compton scattering light sources, and ultrafast electron diffraction, will greatly benefit from the improved repetition rate. In this paper, we proposed a specifically designed S-band radio frequency (RF) photoinjector to obtain low emittance and kilohertz (kHz) high-repetition rates simultaneously. By lowering the gradient, much lower RF power is needed to feed the electron gun, and then the heat problem is much easier to handle. Meanwhile, by optimizing the length of the gun’s first cell from the normal case of 0.6-cell to 0.4-cell, the launch phase and the extraction field are significantly improved, thus ensuring the generation of low-emittance electron beams. In our design, the proposed 1.4-cell RF gun can work effectively under different field gradients ranging from 30 MV/m to 100 MV/m. For a standard case of 60 MV/m, 2.5 MW peak RF power with μs level pulse width is sufficient, thus offering the feasibility of improving the repetition rate to kHz level with a standard 5 MW irradiation klystron. In addition, simulated electron beams with a low emittance of 0.29 mm.mrad@200 pC can be generated by this proposed photoinjector, showing that this high-repetition rate injector holds the potential to deliver high-quality beams comparable to those of state-of-the-art S-band photoinjectors. Combining the merits of low emittance and high-repetition rate, this proposed photoinjector will provide a new possibility for future free-electron laser facilities operating at repetition rates ranging from kHz to tens of kHz.

Evolutionary algorithm for minimizing the temperature influence of low power RF Energy Harvesting circuits

The aim of this work is to analyze and optimize the design of low-power Radio Frequency (RF) Energy Harvesting rectifiers by using an Evolutionary Algorithm. Although, generally neglected in the literature, the RF rectifier operation strongly depends on the operation temperature. When it varies, the input impedance can change significantly, affecting the circuit matching and its power conversion efficiency. In this work, an evolutionary algorithm is used to identify which parameters of an RF diode are responsible for the performance degradation as a function of temperature and to optimize the rectifier circuit in order to reduce the temperature influence. This work demonstrates that the saturation current, the zero-bias junction capacitance, the load and the series resistance have an important impact in designing an optimized circuit. Results indicate that the applied algorithm can be used aiming the project of a circuit more robust to temperature variations. The obtained results have also been compared to experimental ones, corroborating the analysis.

Experimental Investigation of Characteristics and Development of Nonlinearity Models for FR1-Range Radio-Frequency Amplifiers

Experimental studies of nonlinear properties of low-power radio-frequency amplifiers similar to those used in 4G/5G mobile communication equipment of the FR1 frequency range are carried out. The measurements of the characteristics of the amplifiers are performed by using the double-frequency testing technique at frequencies of the n7 band (2500–2570 / 2620–2690 MHz), which is allocated in Belarus for 4G mobile communication systems, and the n78 band (3300–3800 MHz), which is planned to be used in Belarus for 5G mobile communications. Based on the results of the measurements of double-frequency characteristics of the amplifiers, their single-tone amplitude characteristics, as well as two-tone characteristics and values of the dynamic range of 3-, 5-, 7-, and 9th order intermodulation in the first harmonic zone, high-order polynomial models of transfer characteristics of the investigated amplifiers are synthesized. The synthesized models are suitable for use in a wide dynamic range of input signals in case of simultaneous modeling of nonlinear effects of all kinds that pose a danger to radio reception in a complex electromagnetic environment created in the frequency bands of mobile (cellular) communications: both “subtle” effects (intermodulation) and “rough” effects (desensitization, cross-modulation). When using the technology of discrete nonlinear analysis of the behavior of radio equipment in a complex electromagnetic environment, the obtained models provide high efficiency of simulation and quantitative analysis of nonlinear processes and radio interference occurring in 4G/5G/6G radio equipment and networks in a complex electromagnetic environment.

Synthesis, Properties, and Application of Ultrathin and Flexible Tellurium Nanorope Films: Beyond Conventional 2D Materials.

Nanomaterials that can be easily processed into thin films are highly desirable for their wide range of applicability in electrical and optical devices. Currently, Te-based 2D materials are of interest because of their superior electrical properties compared to transition metal dichalcogenide materials. However, the large-scale manufacturing of these materials is challenging, impeding their commercialization. This paper reports on ultrathin, large-scale, and highly flexible Te and Te-metal nanorope films grown via low-power radiofrequency sputtering for a short period at 25°C. Additionally, the feasibility of such films as transistor channels and flexible transparent conductive electrodes is discussed. A 20 nm thick Te-Ni-nanorope-channel-based transistor exhibits a high mobility (≈450 cm2 V-1 s-1 ) and on/off ratio (105 ), while 7 nm thick Te-W nanorope electrodes exhibit an extremely low haze (1.7%) and sheet resistance (30 Ω sq-1 ), and high transmittance (86.4%), work function (≈4.9eV), and flexibility. Blue organic light-emitting diodes with 7 nm Te-W anodes exhibit significantly higher external quantum efficiencies (15.7%), lower turn-on voltages (3.2V), and higher and more uniform viewing angles than indium-tin-oxide-based devices. The excellent mechanical flexibility and easy coating capability offered by Te nanoropes demonstrate their superiority over conventional nanomaterials and provide an effective outlet for multifunctional devices.

Study of optical and passivation properties of hydrogenated silicon carbide thin films deposited by reactive magnetron sputtering for c-Si solar cell application

In this paper, optical and passivating properties of hydrogenated silicon carbide synthesized by reactive magnetron sputtering for c-Si solar cell application were studied. SiC:H films were synthesized by sputtering a SiC target in an argon-hydrogen ambient at a Radio Frequency (RF) power of 100–250 W. The thickness, density, and roughness of the films were measured by X-ray reflectometry. The optical properties of the films were studied by UV–visible spectroscopy. It is shown that with an increase in RF power, the refractive index increases from 1.53 to 2.32 (at λ = 633 nm), and the extinction coefficient does not exceed 0.009 in most of the visible and near-IR spectrum. Based on the measured optical constants using computer simulation the optimal thicknesses were calculated to maximize antireflection effect. IR spectroscopy showed correlation between the structure and physical properties of the films. It has been established that, at a lower RF power (100–150 W), particles are deposited instead of atoms. This leads to the formation of voids at the particle boundaries, which are subsequently filled with oxygen. Using the non-contact microwave photoconductance decay method, it was shown that the maximum effective lifetime (τeff) is achieved at RF power of 250 W. In addition, influence of preliminary surface cleaning procedure and post-annealing in vacuum on the τeff was considered.

Analysing the Impact of Substrate Thickness on Antenna Performance for GPS Application

A microstrip patch antenna is a popular choice of antenna for use in the L band frequency range. They also have good radiation characteristics, making them ideal for receiving and transmitting low-power radio frequency signals. The proposed compact antenna is meant for GPS applications covering the L1 band. The antenna is designed involving the Rogers’s substrate having a dielectric constant of 2.2. The design is based on circular microstrip patch structure with inset feed technique. The selection of the dielectric material and its thickness is very crucial in designing microstrip patch antenna. This paper also explains how antenna performance is improved by varying the thickness of the substrate. The radiation pattern, return loss, gain, directivity, VSWR and efficiency are obtained using EM Simulation and the results are compared for various designs structures. It is inferred that as the thickness of the substrate increases, the performance of the antenna also gets better.

Wideband Power-Dependent Power Limiter Based on Distributed Low-Temperature Superconductor rf-SQUIDs for Cryogenic RF Receivers

A novel design of a radio-frequency (RF) power limiter for protecting sensitive superconductor receiver components from high-power microwave signals is presented. In this approach, two low- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T} _{c}$ </tex-math></inline-formula> superconductor microstrip lines, one of which is coupled with an array of RF superconducting quantum interference devices (rf-SQUIDs), are combined with a pair of hybrid couplers to provide the power limiting operation at very low RF power levels. The key concept is built on the fact that a microstrip line coupled to an array of rf-SQUIDs behaves as a power-dependent phase shifter and its phase can be controlled by the input RF power. This phenomenon is exploited to achieve the desired RF power-limiting operation. The device is fabricated using an eight-layer niobium-based superconducting process node SFQ5ee by MIT Lincoln Laboratory (MIT-LL). A monolithically integrated wideband hybrid coupler is used in this design as it dictates the bandwidth of the overall device. The operating frequency of the power limiter is 10 GHz with a 2-GHz bandwidth. The performance of the device is measured for input RF power levels ranging from −30 to +10 dBm, as well as arising intermodulation products are experimentally investigated. The output power increases linearly with the input power up to −15 dBm, and for higher power levels, the device offers an increasing attenuation to limit the output RF power starting above −15 dBm.

Investigation of Si 1−X GeX source dual material stacked gate oxide pocket doped hetero-junction TFET for low power and RF applications

ABSTRACT In this paper, the applicability of dual material stacked gate-oxide-Pocket doped-hetero-junction tunnel field effect transistor (DMSGO-PD-HTFET) for low power switching and radio frequency (RF) applications is investigated. In this context, gate workfunction engineering, the stacked-gate-oxide (+) approach, and asymmetrical doping at the P+ source () and N+ drain regions are considered. N+ pocket at source-channel interface implements DMSGO-PD-HTFET and improves interband tunnelling rate. This research aims to improve the device’s switching ratio (/), average subthreshold swing (), and radio frequency (RF) performance. For this, the control gate work function, mole fraction (X), pocket thickness, and doping concentration are optimised. Next, the DC, analog/RF and linearity figure of merits of the proposed device is analysed and the performance is compared with conventional all-silicon dual-material stack gate oxide tunnel field effect transistor (DMSGO-TFET) and dual-material stacked gate oxide-hetero-junction tunnel field effect transistor (DMSGO-HTFET) with source using technology computer-aided design (TCAD) device simulator. Based on the comparative analysis, the optimised design with exhibits an average subthreshold swing () of 28.8 mV/decade, switching ratio (/) of 2 × 1012, cut-off frequency () of 216 (GHz), and other significant improvements in analog/RF and linearity performance parameters. The proposed device is therefore suitable for switching and RF applications.

Observation of low-frequency oscillation in argon helicon discharge

We present here a kind of low-frequency oscillation in argon helicon discharge with a half helical antenna. This time-dependent instability shows a global quasi-periodic oscillation of plasma density and electron temperature, with a typical frequency of a few tens of Hz which increases with external magnetic field as well as radiofrequency (RF) power. The relative oscillation amplitude decreases with magnetic field and RF power, but the rising time and pulse width do not change significantly under different discharge conditions. The oscillation can only be observed in some specific conditions of low magnetic fields and low RF power when the gas flows in from one end of the discharge area and out from another end. This global instability is suggested to be attributed to the pressure instability of neutral depletion, which is the result of compound action of gas depletion by heating expansion and gas replenishment from upstream. There are two kinds of oscillations, large and small amplitude oscillations, occurring in different discharge modes. This study could be a good verification of and complement to earlier experiments. This kind of spontaneous pulse phenomenon is also helpful in realizing a pulsing plasma source without a pulsed power supply.

Generation and delivery of free hydroxyl radicals using a remote plasma

We demonstrate a new gas-based generation source using a low power radio frequency driven atmospheric pressure plasma configured to deliver the radical flux into the far effluent region, well away from interference from other plasma factors such as electric fields, currents, and ultraviolet radiation. Using He–H2O gas chemistry isolated from the laboratory air, the plasma generated flux contains and other radicals including, O and HO2 as well as H2O2 which, along with, was found to vary with H2O vapour content and absorbed power density. Peak flux values were 2.3 nmol s−1 and 0.23 nmol s1 for H2O2 and respectively at a distance of 50 mm from the plasma, with 790 ppmv H2O and a power density of ∼108 W m−3. The maximum flux density was 4.5 × 1019 m−2s−1 falling to 1.7 × 1019 m2 s1 at 110 mm, equivalent to generation rates of 74 µM s1 and 28 µM s−1. Despite high recombination rates at the plasma exit, the escaping flux is still significant, indicating a viable delivery capability to downstream targets. Its performance with regard to generation rates compares well with traditional generation techniques such as radiolysis, advanced oxidation processes and enhanced Fenton-chemistry approaches where production rates are sub-µM s−1. Delivering precisely quantifiable fluxes provides new opportunities for scientific studies and technological opportunities in cell biology, atmospheric chemistry, protein unfolding and systematic dose studies for plasma-based and other related potential medical treatments.

High-Power Test of Two Prototype X-Band Accelerating Structures Based on SwissFEL Fabrication Technology

This article presents the design, construction, and high-power test of two <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula> -band radio frequency (RF) accelerating structures built as part of a collaboration between CERN and the Paul Scherrer Institute (PSI) for the compact linear collider (CLIC) study. The structures are a modified “tuning-free” variant of an existing CERN design and were assembled using Swiss free electron laser (SwissFEL) production methods. The purpose of the study is two-fold. The first objective is to validate the RF properties and high-power performance of the tuning-free, vacuum brazed PSI technology. The second objective is to study the structures’ high-gradient behavior to provide insight into the breakdown and conditioning phenomena as they apply to high-field devices in general. Low-power RF measurements showed that the structure field profiles were close to the design values, and both structures were conditioned to accelerating gradients in excess of 100 MV/m in CERN’s high-gradient test facility. Measurements performed during the second structure test suggest that the breakdown rate (BDR) scales strongly with the accelerating gradient, with the best fit being a power law relation with an exponent of 31.14. In both cases, the test results indicate that stable, high-gradient operation is possible with tuning-free, vacuum brazed structures of this kind.

Temperature Analysis of Schottky Diodes Rectifiers for Low-Power RF Energy Harvesting Applications

This article aims to contribute for the improvement of low-power Radio Frequency Energy Harvesting (RFEH) designs based on Schottky Barrier Diode (SBD) rectifiers, presenting a study of the relationship between RF-DC Power Conversion Efficiency (PCE) and circuit temperature, which is directly related to the non-linear behavior of the metal-semiconductor junction of SBDs. For this purpose, SPICE diode models were revisited, evaluating the temperature dependence and its effects on forward and reverse conduction modes. The SBDs SMS7621 and SMS7630 temperature dependent characteristics are evaluated according the proposal, and their use is explored through analytical modeling and simulation analyzes of an RFEH system for temperatures ranging from 240 to 360 K. Hence, after an initial formulation of the optimum operation in terms of PCE, two series RF rectifiers are designed based on the mentioned diodes, aiming at an efficient operation over different temperature ranges according to each component optimum PCE, at 300 K for the SMS7630 and over 340 K for the SMS7621. For the SMS7630 prototype, the maximum measured PCE is 25.33% around 293 K, but decreases to 3.65% around 353 K, and for the SMS7621 the measured PCE goes from 11.56% to 16.34% in the same temperature range, considering −20 dBm as Input Power ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{in}$ </tex-math></inline-formula> ) due to the low-power RFEH premise. The results leads to a higher PCE stability for the SMS7621 through the whole analyzed range, despite the overall PCE that is limited by the matching network losses intrinsic to the design.

Development of low power and high voltage RF signal generator

Ion confinement technology can be widely used in quantum computation and precision measurement. In ion trapping system, ions are stably trapped in ion trap by the action of external forces.Multi-ion confinement requires the joint action of electric field and magnetic field to make the trapped ions overcome the interaction force between ions and be stably confined in the same specific space. Therefore, the stability of the electric force and the magnetic force determines the stability of ion confinement. Although the electric field and magnetic field provided by traditional commercial instruments is stable, it is not conducive to the miniaturization of the device. According to the previous experiment of ion confinement, we have designed a radio frequency(RF) signal generator that can provide continuous low power and stable high voltage RF electric field for multi-ion confinement system to guarantee the stability of trapped ions in quadrupole linear ion trap, also to improve the tapped ions density.

The effect of magnetic resonance imaging on mercury release from dental amalgam at 3T and 7T

ObjectivesTo measure mercury release from standardised hydroxyapatite/amalgam constructs during MRI scanning and investigate the impact of static field strength and radiofrequency (RF) power on mercury release. MethodsAmalgam was placed into 140 hydroxyapatite disks and matured for 14-days in artificial saliva. The solution was replaced, and samples split into five groups of 28 immediately prior to MRI. One group had no exposure, and the remainder were exposed to either a 3T or 7T MRI scanner, each at high and low RF power. Mercury concentration was measured by inductively coupled plasma mass spectrometry. Groups were compared using one-way ANOVA, and two-way ANOVA for main effects/ interaction of field strength/ RF power. ResultsMercury concentration was increased in the 7T groups (high/ low: 15.43/ 11.33 ng mL−1) and 3T high group (3.59) compared to control (2.44). MRI field strength significantly increased mercury release (p < .001) as did RF power (p = .030). At 3T, mercury release was 20.3 times lower than during maturation of dental amalgam, and for the average person an estimated 1.50 ng kg−1 of mercury might be released during one 3T investigation; this is substantially lower than the tolerable weekly intake of 4,000 ng kg−1. ConclusionMercury release from amalgam shows a measurable increase following MRI, and the magnitude changes with magnetic field strength and RF power. The amount of mercury released is small compared to release during amalgam maturation. Amalgam mercury release during MRI is unlikely to be clinically meaningful and highly likely to remain below safe levels.

First operations with caesium of the negative ion source SPIDER

The negative-ion based neutral beam injector for heating and current drive of the ITER plasma (ITER HNB) is under development, at present focusing on the optimization of the full-scale plasma source in the SPIDER test stand. The production of H− or D− ions in the ion source is based on the low work function surfaces obtained by caesium evaporation. This paper describes the caesium conditioning procedure and the corresponding beam performances during the first operation of SPIDER with caesium. Technical solutions to overcome present limitations of the test stand are described. The influence of source parameters on the caesium effectiveness was investigated in short beam pulse operation; with total radio-frequency (RF) power of 400 kW and filling pressure below 0.4 Pa, and a limited number of extraction apertures, a negative ion current density of about 200 A m−2 was extracted in hydrogen, with beam energy lower than 60 keV. Beam optics and beam uniformity were assessed thanks to the acceleration of isolated ion beamlets. A possible procedure to accelerate a uniform beam was demonstrated at low RF power. The results obtained in this first investigation provided key indications on the operation of one of the largest existing sources of accelerated negative hydrogen-like ions.

High-gain narrowband radio frequency signal amplifier based on a dual-loop optoelectronic oscillator.

A novel photonic-assisted method for radio frequency (RF) signal amplification with high-gain and narrowband based on a dual-loop optoelectronic oscillator (OEO) is proposed and experimentally demonstrated. In the proposed system, the low-power RF signal is injected into a dual-loop OEO which is below the threshold oscillation state. And the maximum gain is obtained when the frequency of the RF signal matches with the potential oscillation mode of the dual-loop OEO. The approach provides an average gain greater than 22 dB for the RF signal which matches with oscillation mode. After amplification, the signal-to-noise ratio (SNR) turns out to be 40 dB. Furthermore, the 3 dB bandwidth of the suggested system can be narrower than 1.2 kHz which can effectively remove the out-of-band noise and spurious effects. Meanwhile, the performance of sensitivity and phase noise are also investigated.

Effect of RF power on AlN film crystallinity in low pressure range using Ar-20%N2 gases by magnetic mirror-type magnetron cathode

Effect of radio frequency (RF) power on aluminum nitride (AlN) film crystallinity has been studied under low gas pressure of 0.1 Pa and low RF power of 3 W with Ar-20%N2 gas by a proposed balanced magnetron cathode with a high plasma production efficiency. The gas pressure and the RF power dependences of AlN film crystallinity show that the c-axis oriented AlN films can be obtained only at 50 W and 100 W in 0.1 Pa. The AlN film crystallinity was not promoted in the low RF power range of <50 W. An Ar-rich sputtering condition at 0.1 Pa induced the Al–Al bonds in the deposited films in a high RF power range of 15 W. The control of the total flux balance between Al and nitrogen atoms at the substrate surface is important to design the optimum sputtering condition at 0.1 Pa.

Low-power RF signal detection with wideband range based on an optically injected optoelectronic oscillator.

A novel method to detect a low-power radio-frequency (RF) signal with ultra-wide frequency range based on an optically injected optoelectronic oscillator (OEO) is proposed and experimentally demonstrated. The optical injection to a distributed feedback (DFB) laser has the advantages of amplifying one sideband of the modulated optical signal selectively and a wide tunable frequency range. The detection upper range that reaches up to 26 GHz and can be improved theoretically. To the best of the authors' knowledge, this is the widest detection range based on an OEO. At the same time, the detection characteristics are good. The sensitivity of the system is -92 dBm and the maximum gain is 12.18 dB at 15.047 GHz. Considering the real application of the detection system, the properties such as dynamic range and performance for detecting a modulated RF signal are also investigated.

An Ambient RF Powered Wireless Sensor System

The development of an ambient radio frequency (RF) powered Internet of Things (IoT) wireless sensor system is reported. The system integrates all major components including multiple antennas, rectifiers, a power management unit (PMU), a microcontroller unit (MCU) with RF transceiver module and sensing unit. A novelty of this applied engineering innovation is the design and use of multi-band dual-polarized multiple antennas to handle the low ambient RF power density found in the everyday environment. Our prototype demonstrates that it is possible to sense temperature, pressure and humidity and wirelessly transmit these signals to a central server with a duty cycle of approximately 15 minutes, when the background ambient RF signals are as low as -28.6 dBm at 950 MHz. The proposed system can address the important issue of energy supply in the development of IoT providing an alternative energy source to batteries or solar cells. Ambient RF powered IoT devices do not require periodic replacement of their batteries or to be placed in visible regions which makes them suitable for wall, ceiling and floor applications. Our ambient RF powered IoT wireless sensor system provides concrete proof, through demonstration, that harnessing ambient RF energy for powering IoT sensor systems is feasible.