Low-noise Avalanche Photodiodes Research Articles

Unipolar carrier multiplication high-gain and low-noise AlGaN ultraviolet avalanche photodiode with periodically stacked structure

Highly sensitive avalanche photodetector (APD) has become a promising candidate for detecting extremely weak target signals. However, the impact ionization multiplication simultaneously triggered by electrons and holes will lead to large excess noise, thus significantly influencing device avalanche performance. Herein, we propose a distinctive AlGaN-based ultraviolet avalanche photodiode with AlN/Al0.2Ga0.8N periodically stacked multiplication region. The higher effective masses and density of states in valence band renders holes limited in the quantum-well region, where thermalization plays a dominant role during carrier transport process. On the contrary, in the atomic-scale AlN/AlGaN stacked structure with a periodic thickness of 10 nm, the electron mutualization motion is conductive to electron obtaining sufficient energy to induce impact ionization. Hence, the mechanism of unipolar carrier induced avalanche multiplication effectively reduces device noise and improving multiplication gain. Meanwhile, the high electric field intensity and tilted energy band in the AlGaN/AlN periodically stacked region significantly contribute to the carrier impact ionization. Consequently, the device achieves a superior avalanche gain of more than 105 at 74 V reverse bias. It is envisioned that the unipolar carrier triggering avalanche events offers a viable route to build high-performance APDs.

Excess noise factor measurement for low-noise high-speed avalanche photodiodes

The excess noise factor(F) is an important parameter for Avalanche Photodiodes (APDs), indicating the extent to which the noise of the diodes exceeds what it would be without multiplication. This paper presents a method of measuring the excess noise factor for high-speed low-noise APDs using the high-sensitivity spectrum analyzer. The F factor test for the high-speed low-noise APDs was performed by comparing two conditions with and without illumination to remove the interference of the system, including the thermal noise and analyzers. The setup conditions of the light source are analyzed in detail. The F factor was obtained as 3.03 when the multiplication factor M is 10, which corresponds to an effective ionization coefficient ratio k of 0.14 for the high-speed InAlAs APD. For comparison, the k value of a commercial Si APD is tested to be ∼0.06.

High electric field characteristics of GaAsSb photodiodes on InP substrates

Low noise avalanche photodiodes (APDs) detecting 1550 nm wavelength play a crucial role in optical communication and LiDAR systems. These APDs utilize a separate absorption, charge, and multiplication (SACM) architecture with an absorber for 1400–1650 nm detection and a low noise, high gain multiplier that can be independently optimized for a high signal-to-noise ratio. Recently, GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 SACM APDs have demonstrated ultra-high gain and extremely low noise, possibly improving sensitivity over Si and InGaAs/InP commercial APDs. This accomplishment was achieved using a GaAsSb absorber instead of a conventional InGaAs absorber, mitigating band discontinuities between the absorber and the multiplier. However, further optimization is required to reduce noise due to tunneling and impact ionization from the GaAsSb absorber, which occurs at a high electric field region. This paper focuses on the study of the high-field characteristics of GaAsSb photodiodes (PDs). The tunneling phenomenon is analyzed through current density-voltage measurements, and the impact ionization behavior is evaluated by measuring the multiplication of p-i-n GaAsSb PDs. The result suggests that when designing a SACM APD with a GaAsSb absorber, the electric field in the absorber can be increased to 175 kV/cm without the detrimental effects of ionization occurring in the absorber. The findings from this investigation will assist in optimizing GaAsSb-based SACM APDs and promoting further advancements in the 1550 nm APD technology.

Large Adaptive Optics Survey for Substellar Objects around Young, Nearby, Low-mass Stars with Robo-AO

Abstract We present results from the Large Adaptive optics Survey for Substellar Objects, where the goal is to directly image new substellar companions (<70 M Jup) at wide orbital separations (≳50 au) around young (≲300 Myr), nearby (<100 pc), low-mass (≈0.1–0.8 M ⊙ ) stars. We report on 427 young stars imaged in the visible (i′) and near-infrared (J or H ) simultaneously with Robo-AO on the Kitt Peak 2.1 m telescope and later the Maunakea University of Hawaii 2.2 m telescope. To undertake the observations, we commissioned a new infrared camera for Robo-AO that uses a low-noise high-speed SAPHIRA avalanche photodiode detector. We detected 121 companion candidates around 111 stars, of which 62 companions are physically associated based on Gaia DR2 parallaxes and proper motions, another 45 require follow-up observations to confirm physical association, and 14 are background objects. The companion separations range from 2 to 1101 au and reach contrast ratios of 7.7 mag in the near-infrared compared to the primary. The majority of confirmed and pending candidates are stellar companions, with ∼5 being potentially substellar and requiring follow-up observations for confirmation. We also detected a 43 ± 9 M Jup and an 81 ± 5 M Jup companion that were previously reported. We found 34 of our targets have acceleration measurements detected using Hipparcos–Gaia proper motions. Of those, 58 − 14 + 12 % of the 12 stars with imaged companion candidates have significant accelerations ( χ 2 > 11.8 ), while only 23 − 6 + 11 % of the remaining 22 stars with no detected companion have significant accelerations. The significance of the acceleration decreases with increasing companion separation. These young accelerating low-mass stars with companions will eventually yield dynamical masses with future orbit monitoring.

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Avalanche Photodiodes (APDs) are key semiconductor components that amplify weak optical signals via the impact ionization process, but this process’ stochastic nature introduces ‘excess’ noise, limiting the useful signal to noise ratio (or sensitivity) that is practically achievable. The APD material’s electron and hole ionization coefficients (α and β respectively) are critical parameters in this regard, with very disparate values of α and β necessary to minimize this excess noise. Here, the analysis of thirteen complementary p-i-n/n-i-p diodes shows that alloying GaAs with ≤ 5.1 % Bi dramatically reduces β while leaving α virtually unchanged—enabling a 2 to 100-fold enhancement of the GaAs α/β ratio while extending the wavelength beyond 1.1 µm. Such a dramatic change in only β is unseen in any other dilute alloy and is attributed to the Bi-induced increase of the spin-orbit splitting energy (∆so). Valence band engineering in this way offers an attractive route to enable low noise semiconductor APDs to be developed.

Characteristics of thin InAlAs digital alloy avalanche photodiodes.

InP-based avalanche photodiodes (APDs) are widely used in short-wave infrared (SWIR) communications. In this work, a thin (200 nm nominal) InAlAs digital alloy layer consisting of two monolayer (ML) InAs and two ML AlAs was grown on InP substrate and investigated in detail. APDs with p-i-n and n-i-p structures were fabricated and characterized. The current-voltage, capacitance-voltage characteristics, and excess noise were measured at room temperature with different laser wavelengths, and the measured effective k value (ratio of impact ionization coefficients) is about 0.15 with the multiplication gain up to 12. The randomly-generated path length (RPL) model was carried out to analyze the dead space effect. Our thin digital alloy successfully reduced excess noise compared with conventional In0.52Al0.48As random alloy without introducing new elements and shows the potential for high-speed, low noise APD applications.

Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability

Single photon avalanche diodes (SPADs) are key enabling technologies for a wide range of applications in the near-infrared wavelength range. Recently, AlAs <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.56</sub> Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.44</sub> (hereafter AlAsSb) lattice-matched to InP has been demonstrated for extremely low excess noise avalanche photodiodes (APDs) due to its large disparity between electron and hole ionization coefficients ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> respectively). The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\alpha /\beta $ </tex-math></inline-formula> ratio also plays a role in Geiger mode operation as it affects the avalanche breakdown probability and hence detection efficiency. In this work, we theoretically investigate the performance of AlAsSb based SPADs. The probability of breakdown for electron-initiated Geiger mode operation increases more sharply with multiplication region width due to progressively more dissimilar ionization coefficients. In comparison with other common avalanche materials, such as InAlAs, InP and Si, our result also suggests that SPADs based on AlAsSb have a sharper breakdown probability than the other three materials under similar low overbias ratio. The calculated breakdown probability of 0.81 in AlAsSb is 0.18 and 0.28 higher than that of InAlAs/Si and InP respectively at 5% overbias ratio and with avalanche region width of 1500 nm.

Implementation of a pulse-type laser detection and ranging system based on heterodyne detection for long-range measurement with high repetition rate.

This paper presents the implementation of a pulse-type LAser Detection And Ranging (LADAR) system based on heterodyne detection for long-range measurement. A pulse-type LADAR based on an intensity direct-detection is certainly simple and mature, but it requires a high peak-power laser and a low-noise avalanche photodiode for long-range measurement, which restricts the scope of the application due to the weight, power consumption, and cost of the laser and the photodetector. In this work, heterodyne detection using a PIN photodiode is implemented to increase receiver sensitivity instead of using a low-noise avalanche photodiode. An optical phase-locked loop is adopted to generate an optical local oscillator signal for heterodyne detection. The proposed heterodyne detection scheme achieves a minimum detectable signal level of -52.6 dBm at a bandwidth of 1.2 GHz, and it is adopted in a pulse-type LADAR system for long-range measurement. The pulse-type LADAR system can measure a distance of 2.77 km at a repetition rate of 40 kHz, and it demonstrates great advantages for realizing real-time 3D imaging for long-range measurement with a high frame rate.

Strain effect on band structure of InAlAs digital alloy

Recently, InAlAs digital alloys have been shown to exhibit unique electronic dispersion properties, which can be used to make low-noise avalanche photodiodes. In this paper, the strain effect is analyzed for its impact on the band structure of the InAlAs digital alloy. Simulation using a tight binding model that includes the strain effect yields bandgap energies that are consistent with experimental results. The bandgap would be larger without strain. In addition, a positive relationship has been found between minigaps of the InAlAs digital alloy and the band offset between bulk InAs and AlAs at the same position in k-space.

Thin $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga$_{\boldsymbol{x}}$As $_{\mathbf{0.56}}$Sb $_{\mathbf{0.44}}$ Diodes With Low Excess Noise

Thin avalanche layers have been adopted to achieve low excess noise and high-gain bandwidth products in InP and InAlAs avalanche photodiodes. In this paper, we report the excess noise characterization in a series of $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga $_{\boldsymbol{x}}$ As $_{\mathbf{0.56}}$ Sb $_{\mathbf{0.44}}$ ( $x\,= \,0,\,0.05$ , 0.1, 0.15) diodes with avalanche layer thickness of 110–116 nm. These alloys, lattice matched to InP, showed lower excess noise than InP and InAlAs. Dark current, most probably originating from surface leakage, was observed to be lower in composition with higher Ga concentration. Avalanche gain and excess noise measurements using lasers of 543 and 633 nm wavelengths indicated that at a given electric field, the electron ionization coefficient is larger than the hole ionization coefficient. Using the 543 nm laser, low excess noise data corresponding to an effective ionization coefficient ratio of $k\,= \,0.1$ in the conventional excess noise theory was measured in $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga $_{\boldsymbol{x}}$ As $_{\mathbf{0.56}}$ Sb $_{\mathbf{0.44}}$ ( $x\,= \,0.05$ , 0.1, 0.15), although pure electron injection was not achieved. Our results demonstrated the potential of using $\text{Al}_{\mathbf{1{-}}{\boldsymbol x}}$ Ga $_{\boldsymbol{x}}$ As $_{\mathbf{0.56}}$ Sb $_{\mathbf{0.44}}$ ( $x\,= \,0.05$ , 0.1, 0.15) as replacement for InP and InAlAs for high speed and low excess noise avalanche photodiodes. The data reported in this paper is available from the ORDA digital repository ( https://doi.org/10.15131/shef.data.5155822 ).

Guest Editorial: Introduction to the Special Issue on Optical Detectors

The objective of this special issue is to document the current state-of-the-art in the area of Optical Detectors and highlight recent progress and trends in innovative optical detector technology and its applications. This issue combines 11 invited and 21 contributed papers, authored byworld-renowned research groups and promising scientists from around the world. The invited papers present extended reviews on recent progress and significant perspectives on future research directions. They cover lownoise linear-mode avalanche photodiodes (APDs) for fiber optic communications, single photon APDs (SPADs) and Si SPAD arrays for photon counting imagers, hybrid integration technologies, waveguide APDs, lowcapacitance nano-photodetector, integrated photodetectors for coherent receivers, and high-speed uni-traveling carrier (UTC) photodiodes (PDs) for THz applications. The contributed papers cover a broad variety of key research areas and emerging technologies in optical detectors including graphene-based detectors, plasmonic structures for current enhancement, phototransistors, and UTC-type PDs on silicon-on-insulator waveguide as well as a UTC PD with type II hybrid absorber. Several papers describe advances in SPADs and CMOS SPAD arrays for UV and visible detection and four papers cover quantum well and quantum dot devices. This special issue also illustrates a wide range of optical detector technology applications including UV, visible, and IR imaging, fiber optic communications, microwave and THz analog applications, and quantum communications. Furthermore, this special issue covers a range of advances on theory and simulation, design and fabrication, and optical detector characterization methodologies.

Mid-infrared coincidence measurements on twin photons at room temperature

Quantum measurements using single-photon detectors are opening interesting new perspectives in diverse fields such as remote sensing, quantum cryptography and quantum computing. A particularly demanding class of applications relies on the simultaneous detection of correlated single photons. In the visible and near infrared wavelength ranges suitable single-photon detectors do exist. However, low detector quantum efficiency or excessive noise has hampered their mid-infrared (MIR) counterpart. Fast and highly efficient single-photon detectors are thus highly sought after for MIR applications. Here we pave the way to quantum measurements in the MIR by the demonstration of a room temperature coincidence measurement with non-degenerate twin photons at about 3.1 μm. The experiment is based on the spectral translation of MIR radiation into the visible region, by means of efficient up-converter modules. The up-converted pairs are then detected with low-noise silicon avalanche photodiodes without the need for cryogenic cooling.

Impact-ionization-engineered avalanche photodiode arrays for free-space optical communication

High-sensitivity photodetectors serve two purposes in free-space optical communication: data reception and position sensing for pointing, tracking, and stabilization. Two separate detectors are traditionally utilized to perform these tasks, but recent advances in the fabrication and development of large area, low-noise avalanche photodiode (APD) arrays have enabled these devices to be used both as position-sensitive detectors and communications receivers because of the conflicting performance criteria. Combining these functionalities allows for more flexibility and simplicity in optical assembly design without sacrificing the sensitivity and bandwidth performance of smaller, single-element data receivers. Beyond eliminating the need to separate the return beam into two separate paths, these devices enable implementation of adaptive approaches to compensate for focal plane beam wander and breakup, which is often seen in highly scintillated terrestrial and maritime optical links. While the Naval Research Laboratory and Optogration, Inc. have recently demonstrated the performance of single period, InAlAs/InGaAs APD arrays as combined data reception and tracking sensors, an impact-ionization-engineered epilayer design achieves even lower carrier ionization ratios by incorporating multiple multiplication periods engineered to suppress lower ionization rate carriers while enhancing the higher ionization rate carriers of interest. This work presents a three-period I2E concentric, five-element APD array rated for bandwidths beyond 1 GHz with measured carrier ionization ratios of 0.05 to 0.1 at moderate APD gains. The epilayer design of the device will be discussed along with initial device characterization and high-speed performance measurements.

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

InAlAs/InGaAs avalanche photodiode arrays for free space optical communication.

In free space optical communication, photodetectors serve not only as communications receivers but also as position sensitive detectors (PSDs) for pointing, tracking, and stabilization. Typically, two separate detectors are utilized to perform these tasks, but recent advances in the fabrication and development of large-area, low-noise avalanche photodiode (APD) arrays have enabled these devices to be used both as PSDs and as communications receivers. This combined functionality allows for more flexibility and simplicity in optical system design without sacrificing the sensitivity and bandwidth performance of smaller, single-element data receivers. This work presents the development of APD arrays rated for bandwidths beyond 1 GHz with measured carrier ionization ratios of approximately 0.2 at moderate APD gains. We discuss the fabrication and characterization of three types of APD arrays along with their performance as high-speed photodetectors.

Recent Advances in Avalanche Photodiodes

Until the early 2000's, the avalanche photodiode (APD) was widely deployed in high-performance optical receivers that operated up to 10 Gb/s. In subsequent years, the use of APDs for high-capacity systems declined as a result of their limited gain bandwidth, the transition to coherent detection, and the development of high-efficiency modulation techniques. Recently, the rapid growth of optical-fiber communications systems that utilize baud rates up to 25 Gb/s represented by a 100-Gb/s Ethernet has led to a resurgence of research on APDs and the development of low-noise APDs with enhanced gain bandwidth. This paper presents a brief review of APD fundamentals and describes some of the recent advances.

First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors

A critical requirement for high gain and low noise avalanche photodiodes is the single-carrier avalanche multiplication. We propose that the single-carrier avalanche multiplication can be achieved in materials with a limited width of the valence band resulting in a restriction of kinetic energy for holes while allowing electrons to participate in the multiplication cascade. This feature of the electric structure is not common to the majority of technologically relevant semiconductors, but it can be anticipated in chalcopyrite Cu(AlGa)Se2 alloys based on the presented electric structure calculations.

Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping

We reduced the room temperature dark current in an InAs avalanche photodiode by increasing the p-type contact doping, resulting in an increased energetic barrier to minority electron injection into the p-region, which is a significant source of dark current at room temperature. In addition, by improving the molecular beam epitaxy growth conditions, we reduced the background doping concentration and realized depletion widths as wide as 5 μm at reverse biases as low as 1.5 V. These improvements culminated in low-noise InAs avalanche photodiodes exhibiting a room temperature multiplication gain of ∼80, at a record low reverse bias of 12 V.

Ultra-fast charge exchange spectroscopy for turbulent ion temperature fluctuation measurements on the DIII-D tokamak (invited)

A novel two-channel, high throughput, high efficiency spectrometer system has been developed to measure impurity ion temperature and toroidal velocity fluctuations associated with long-wavelength turbulence and other plasma instabilities. The spectrometer observes the emission of the n = 8-7 hydrogenic transition of C(+5) ions (λ(air) = 529.06 nm) resulting from charge exchange reactions between deuterium heating beams and intrinsic carbon. Novel features include a large, prism-coupled high-dispersion, volume-phase-holographic transmission grating and high-quantum efficiency, high-gain, low-noise avalanche photodiode detectors that sample emission at 1 MHz. This new diagnostic offers an order-of-magnitude increase in sensitivity compared to earlier ion thermal turbulence measurements. Increased sensitivity is crucial for obtaining enough photon statistics from plasmas with much less impurity content. The irreducible noise floor set by photon statistics sets the ultimate sensitivity to plasma fluctuations. Based on the measured photon flux levels for the entire spectral line, photon noise levels for T̃(i)/T(i) and Ṽ(i)/V(i) of ~1% are expected, while statistical averaging over long data records enables reduction in the detectable plasma fluctuation levels to values less than that. Broadband ion temperature fluctuations are observed to near 200 kHz in an L-mode discharge. Cross-correlation with the local beam emission spectroscopy measurements demonstrates a strong coupling of the density and temperature fields, and enables the cross-phase measurements between density and ion temperature fluctuations.

Efficient and low-noise single-photon avalanche photodiode for 1244-GHz clocked quantum key distribution

An efficient and low-noise 1.244-GHz gating InGaAs single-photon avalanche photodiode (SAPD) was developed for a high-speed quantum key distribution (QKD) system. An afterpulsing probability of 0.61% and a dark count probability per gate of 0.71 ×10-6 were obtained at a detection efficiency of 10.9% for 1.55-µm photons. Furthermore, our SAPD successfully coped with high detection efficiency (≤ 25%) and quite low afterpulsing noise (≤ 3% for ≤ 25% efficiency) at the same time. Its potential was verified using the actual QKD setups installed over a metropolitan area network.