Ruthenium (II) complexes of the type cis-Ru(H 2dcbiq) 2X 2 and cis-Ru(H 2dcdhph) 2X 2, where H 2dcbiq=4,4′-dicarboxy-2,2′-biquinoline, H 2dcdhph=5,8-dicarboxy-6,7-dihydro-dibenzo[1,10]-phenanthroline, and X=Cl −, NCS − or CN −, have been synthesized and spectroscopically characterized. The resulting complexes show a broad and intense metal-to-ligand charge transfer (MLCT) band in the visible region with a peak between 580 and 700 nm and are emissive at room temperature. The ground-state first p K a value of cis-Ru(H 2dcbiq) 2(NCS) 2 ( 2) was determined to be 2.9 by the spectrophotometric method. Photoelectrochemical measurements show that all dyes, when anchored to a nanocrystalline TiO 2 film electrode, present low light-harvesting efficiencies due to inefficient driving force for electron injection into the conduction band of TiO 2 from their lower energy MLCT band. The photoelectrochemical performance of 2 was also investigated on a number of oxide semiconductor thin films such as Nb 2O 5, ZnO, SnO 2 and In 2O 3. The results show that a high value of short-circuit photocurrent ( J sc) is observed for the semiconductors having a low-energy conduction band potential (SnO 2 and In 2O 3). In the dye 2-sensitized TiO 2 film, the absorbed photon-to-current conversion efficiency (APCE) spectrum shows an absorption band selective electron injection yield, while a wavelength independent electron injection yield is observed when dye 2 is anchored to SnO 2. These results indicate that the lowest excited MLCT state is energetically favorable for electron injection into the conduction band of SnO 2 but not for TiO 2.
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