AbstractOxide electronics has received increasing research and industrial attention in recent years. Solution‐processed/printed thin film transistors (TFTs) have rapidly matured to challenge its organic counterparts. However, when the n‐type oxides can demonstrate high mobility band transport, the performance of the p‐type ones is still weak. Consequently, examples of all‐oxide circuits are rare in the literature. Here printed amorphous indium‐gallium‐zinc oxide (a‐IGZO) based all‐oxide pseudo‐CMOS inverters, ring oscillators, and static random access memories (SRAMs), where the doping density and the device aspect ratio‐controlled deep‐subthreshold region offers sharp switching of the input signal is shown. For example, the signal gain (η) of pseudo‐CMOS 2T and 4T inverters is recorded as 285 and 329, respectively. Furthermore, the deep subthreshold operation ensures low dynamic power consumption, only few tens of nanowatts up to 1.5 V supply voltage. The inverters have demonstrated rail‐to‐rail swing up to 30 kHz and the 3‐stage ring oscillators recorded oscillation frequency of 6.7 kHz. The SRAM devices have shown satisfactory noise margins at HOLD‐, READ‐, and WRITE‐states, while their transient response is also recorded. These fully‐printed all‐oxide TFTs and circuits can be of large interest in portable/wearable electronics, display backplanes, interfacing circuits for sensors, etc.
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