Neutral-colored transparent crystalline silicon photovoltaics (c-Si TPV) was reported as remarkable building-integrated photovoltaics (BIPV) due to its high efficiency with excellent transmittance. Deep reactive ion etching (DRIE) is required to fabricate this photovoltaics where the microhole-shaped light transmission windows were placed on bare crystalline silicon (c-Si, ca. 200 μm thickness) to transmit all visible wavelengths, which causes both high fabrication cost and the plasma damage on Si surface. A prominent replaceable method is metal-assisted chemical etching (MACE) which occurs through the redox reaction at the Si/metal catalyst/etchant solution interfaces because it features simplicity, versatility, and cost-effectiveness. However, the metal catalysts that grow via electroless deposition are deposited as particle-form, which act individually during MACE and induce the uneven MACE, thus yielding a lot of defects on the resultant Si.Here, we report deep MACE using a porous monolithic AgAu layer on c-Si for fabricating c-Si TPV. To prevent the uneven etching of c-Si by Ag particles, the porous monolithic Ag layer is developed by introducing acetonitrile (AN) to enhance the interaction between the c-Si surface and Ag precursor. This results in cooperative motion during MACE, as confirmed by microscopic observation, surface area measurement, and computational simulations. The durability of this Ag catalyst can be further improved by passivation with Au via galvanic replacement (i.e., the porous monolithic AgAu layer), thereby preventing indiscriminate defect generation. Thus, the fabricated c-Si TPV using MACE and a porous monolithic AgAu layer exhibits high performance of 13.0% with 20% neutral-colored transparency, representing results superior to those obtained with samples fabricated by DRIE (11.5%). Figure 1
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